Abstract: To provide an organic electroluminescence device having high luminous efficiency (for example, external quantum efficiency) and high durability and causing little chromaticity shift after device deterioration. An organic electroluminescence device material comprising a substrate having thereon a pair of electrode and at least one organic layer between the electrodes, the organic layer containing a light emitting layer, wherein any one layer of the organic layer contains, for example, as shown below, a metal complex having a group represented by formula (I).

Abstract: The present invention relates to an electroluminescence device having high luminous efficiency (for example, external quantum efficiency) and high durability and causing little chromaticity shift after device deterioration. The present invention also relates to an organic electroluminescence device material comprising a substrate having thereon a pair of electrode and at least one organic layer between the electrodes, the organic layer containing a light emitting layer, wherein the light emitting layer contains a metal complex having a group represented by formula (I).

Abstract: The present invention relates to an electroluminescence device having high luminous efficiency (for example, external quantum efficiency) and high durability and causing little chromaticity shift after device deterioration. The present invention also relates to an organic electroluminescence device material comprising a substrate having thereon a pair of electrode and at least one organic layer between the electrodes, the organic layer containing a light emitting layer, wherein the light emitting layer contains a metal complex having a group represented by formula (I).

Abstract: There are provided a pattern formation method, including: (1) forming a film using an active light-sensitive or radiation-sensitive resin composition; (2) exposing the film to active light or radiation; and (3) developing the exposed film using a developer including an organic solvent, wherein the active light-sensitive or radiation-sensitive resin composition contains a resin (A) having specific repeating units, and a crosslinking agent (C).

Abstract: The present invention relates to an electroluminescence device having high luminous efficiency (for example, external quantum efficiency) and high durability and causing little chromaticity shift after device deterioration. The present invention also relates to an organic electroluminescence device material comprising a substrate having thereon a pair of electrodes and at least one organic layer between the electrodes, the organic layer containing a light emitting layer, wherein the light emitting layer contains a metal complex having a group represented by formula (I).

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (A) and any of compounds (B) of general formula (I) below. (In general formula (I), Rf represents a fluorine atom or a monovalent organic group containing at least one fluorine atom; R1 represents a hydrogen atom or a monovalent substituent containing no fluorine atom; X1 represents a monovalent organic group having at least two carbon atoms, or a methyl group in which a substituent other than a fluorine atom is optionally introduced, provided that X1 may be bonded to R1 to thereby form a ring; and Z represents a moiety that when exposed to actinic rays or radiation, is converted to a sulfonic acid group, an imidic acid group or a methide acid group).

Abstract: There is provided a pattern forming method comprising (i) forming a film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a resin which decomposes due to an action of an acid to change its solubility with respect to a developer and (C) a specific resin, (ii) forming a top coat layer using a top coat composition which contains a resin (T) on the film, (iii) exposing the film which has the top coat layer to actinic rays or radiation, and (iv) forming a pattern by developing the film which has the top coat layer after the exposing.

Abstract: Provided are an organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, and a source electrode and a drain electrode on a substrate, in which the organic semiconductor layer contains an organic semiconductor and a block copolymer, and the block copolymer is at least one selected from specific block copolymers such as a styrene-(meth)acrylate ester block copolymer and may be phase-separated, and a method for manufacturing an organic thin-film transistor, which includes an organic semiconductor containing a phase-separated block copolymer, including: applying a coating solution which contains an organic semiconductor and a block copolymer for film formation; and heating the obtained film so that the block copolymer is self-assembled.

Abstract: An object of the present invention is to provide an organic thin film transistor exhibiting high carrier mobility and a low threshold voltage and having excellent heat resistance, a method of manufacturing an organic thin film transistor, an organic semiconductor composition, an organic semiconductor film, and a method of manufacturing an organic semiconductor film.

Abstract: An object of the present invention is to provide an organic thin film transistor exhibiting high carrier mobility and a low threshold voltage and having excellent heat resistance, a method of manufacturing an organic thin film transistor, an organic semiconductor composition, an organic semiconductor film, and a method of manufacturing an organic semiconductor film.

Abstract: There is provided a pattern forming method comprising (a) a step of forming a film on a substrate using an electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, (b) a step of forming a top coat layer on the film using a top coat composition containing a resin (T) containing at least any one of repeating units represented by formulae (I-1) to (I-5) shown below, (c) a step of exposing the film having the top coat layer using an electron beam or an extreme ultraviolet radiation, and (d) a step of developing the film having the top coat layer after the exposure to form a pattern.

Abstract: Provided is a semiconductor device which includes a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound that has a repeating unit (IA) represented by the following Formula (IA) and a repeating unit (IB) represented by the following Formula (IB); and an insulating layer-forming composition which is used for forming an insulating layer of a semiconductor device and contains a polymer compound that has the following repeating units (IA) and (IB). In Formulae, R1a and R1b each independently represent a hydrogen atom, a halogen atom, or an alkyl group. L1a, L2a, and L1b each independently represent a single bond or a linking group. X represents a crosslinkable group and YB represents a decomposable group or a hydrogen atom. m1a and m2a each independently represent an integer of 1 to 5. The symbol “*” represents a bonding position of the repeating units.

Abstract: There are provided A pattern formation method, including: (1) forming a film using an active light-sensitive or radiation-sensitive resin composition; (2) exposing the film to active light or radiation; and (3) developing the exposed film using a developer including an organic solvent, wherein the active light-sensitive or radiation-sensitive resin composition contains a resin (A) having specific 3 repeating units.

Abstract: An organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, a source electrode, and a drain electrode on a substrate, in which the organic semiconductor layer includes an organic semiconductor and a resin (C) having one or more groups selected from the group consisting of a group having fluorine atoms, a group having silicon atoms, an alkyl group having one or more carbon atoms or having two or more carbon atoms in a case of forming an alkoxycarbonyl group, a cycloalkyl group, an aralkyl group, an aryloxycarbonyl group, an aromatic ring group substituted with at least one alkyl group, and an aromatic ring group substituted with at least one cycloalkyl group; and a method for manufacturing an organic thin-film transistor including: applying a coating solution which contains the organic semiconductor and the resin (C) and causing the resin (C) to be unevenly distributed.

Abstract: There is provided a pattern forming method, including: (1) forming a film using an actinic ray-sensitive or radiation-sensitive resin composition, (2) exposing the film with actinic ray or radiation, (3) developing the film exposed by using a developer containing an organic solvent, wherein the actinic ray-sensitive or radiation-sensitive resin composition contains (A) a resin having a repeating unit (R) with a structural moiety capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid, and (B) a solvent, and the developer contains an additive that causes at least one interaction selected from the group consisting of an ionic bond, a hydrogen bond, a chemical bond and a dipole interaction with respect to a polar group contained in the resin (A) after the exposing.

Abstract: Provided is a thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer provided between the gate electrode and the semiconductor layer and formed of an organic polymer compound, and a source electrode and a drain electrode provided in contact with the semiconductor layer and connected via the semiconductor layer, on a substrate, in which the content of metals selected from Mg, Ca, Ba, Al, Sn, Pb, Cr, Mn, Fe, Ni, Cu, Zn, and Ag in the gate insulating layer is 10 ppb to 1 ppm in terms of total amount, or the content of non-metal ionic materials selected from halogen ions, sulfate ions, nitrate ions, and phosphate ions is 1 ppm to 100 ppm in terms of total amount.

Abstract: The pattern forming method includes (1) forming a film using an active light sensitive or radiation sensitive resin composition, (2) exposing the film to active light or radiation, and (3) developing the exposed film using a developer including an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.

Abstract: According to one aspect of the present invention, there is provided a pattern forming method comprising, in this order: (1) forming a film by using an electron beam- or extreme ultraviolet-sensitive resin composition containing, in a specific amount, a resin (Aa) having a specific atom or substituent; (2) exposing the film by using an electron beam or extreme ultraviolet ray; and (3) forming a negative pattern by performing development using a developer including an organic solvent after the exposure.

Abstract: Provided is a semiconductor device which includes a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound that has a repeating unit (IA) represented by the following Formula (IA) and a repeating unit (IB) represented by the following Formula (IB); and an insulating layer-forming composition which is used for forming an insulating layer of a semiconductor device and contains a polymer compound that has the following repeating units (IA) and (IB). In Formulae, R1a and R1b each independently represent a hydrogen atom, a halogen atom, or an alkyl group. L1a, L2a, and L1b each independently represent a single bond or a linking group. X represents a crosslinkable group and YB represents a decomposable group or a hydrogen atom. m1a and m2a each independently represent an integer of 1 to 5. The symbol “*” represents a bonding position of the repeating units.

Abstract: There is provided a pattern forming method comprising (1) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a resin containing an acid-decomposable repeating unit and being capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a compound capable of decomposing by the action of an acid to generate an acid, and (D) a solvent; (2) a step of exposing the film by using an actinic ray or radiation, and (4) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern.