Abstract: A silicone elastomer cured product having radical reactivity obtained by curing a composition is disclosed. The composition comprises (A) a chain organopolysiloxane having a curing reactive group, and optionally (B) an organohydrogen polysiloxane, (C1) a curing agent, and (D) an organopolysiloxane resin. The surface of the cured product has radical reactivity with, for example, an adhesive, and is easily removable along with, for example, adhesive tape after use as a protective material. In general, the cured product has excellent heat resistance and flexibility and exhibits good adhesion and conformity to a substrate so as not to separate from a substrate even when the cured product is cut together with the substrate while remaining easily removable from the substrate when desired. A protective material for an electronic component made of the cured product is also disclosed.

Abstract: A laminated coil component includes: an element body having a first surface and a second surface facing each other in a first direction; a coil unit formed by laminating a plurality of coil conductors in a second direction orthogonal to the first direction inside the element body; a first lead-out conductor; and a second lead-out conductor. A first coil conductor adjacent to the first lead-out conductor in the second direction includes a first side portion extending along the first surface, on a first surface side. A second coil conductor adjacent to the second lead-out conductor in the second direction includes a second side portion extending along the second surface, on a second surface side. The first side portion has a larger line width than other side portions of the first coil conductor and the second side portion.

Abstract: The present invention provides a plasma processing apparatus which reduces damage from plasma generated in a discharge vessel and lengthens the replacement cycle of the discharge vessel. A plasma processing apparatus 1 is provided with a processing chamber 2 partitioning a processing space, a discharge vessel 3 whose one end opens facing inside the processing chamber 2 and the other end is closed, an antenna 4 which is disposed around the discharge vessel 3 and generates an induced electric field to generate plasma in the discharge vessel 3 under reduced pressure, and an electromagnet 9 which is arranged around the discharge vessel 3 and forms a divergent magnetic field in the discharge vessel 3. The discharge vessel 3 has at its closed end portion a protrusion 15 projecting toward the processing chamber 2.

Abstract: To provide an ion beam etching method which enables a highly uniform IBE process even under a low-angle-incident static condition, without increase in the size of an apparatus. The ion beam etching method includes: changing a position of an opening portion with respect to a substrate; etching the substrate with an ion beam passing through the opening portion; and reducing a tilt angle as a center of a site where the ion beam is incident on the substrate moves away from the ion source.

Abstract: An ion beam etching method includes applying a positive voltage for extracting ions into a vacuum container to a first electrode, under a first condition where irradiation of a substrate with an ion beam is blocked off by a shutter, generating plasma in an internal space under the first condition, forming the ion beam by forming, under the first condition, a second condition where a positive voltage is applied to the first electrode and a negative voltage is applied to a second electrode, and moving the shutter and processing the substrate by irradiating the substrate with the ion beam.

Abstract: To provide an ion beam etching method which enables a highly uniform IBE process even under a low-angle-incident static condition, without increase in the size of an apparatus. The ion beam etching method includes: changing a position of an opening portion with respect to a substrate; etching the substrate with an ion beam passing through the opening portion; and reducing a tilt angle as a center of a site where the ion beam is incident on the substrate moves away from the ion source.

Abstract: An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.

Abstract: An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.

Abstract: An ion beam etching method includes applying a positive voltage for extracting ions into a vacuum container to a first electrode, under a first condition where irradiation of a substrate with an ion beam is blocked off by a shutter, generating plasma in an internal space under the first condition, forming the ion beam by forming, under the first condition, a second condition where a positive voltage is applied to the first electrode and a negative voltage is applied to a second electrode, and moving the shutter and processing the substrate by irradiating the substrate with the ion beam.

Abstract: The present invention provides a manufacturing method of a magneto-resistance effect element, in which the step coverage of a formed film can be enlarged and also the film can be deposited in a low temperature range. In an embodiment of the present invention, an insulating protective layer is formed on a multilayered structure by a plasma CVD apparatus in which a plasma source and a film deposition chamber are separated from each other by a partition wall plate. According to the present method, it is possible to deposit the protective layer without inviting the degradation of a magnetic characteristic and also to perform low temperature film deposition even at a temperature lower than 150° C. Hence, it is possible to deposit the protective layer while leaving resist and also to reduce the number of steps in the manufacturing of the magneto-resistance effect element having a multilayered structure.

Abstract: The present invention provides a plasma processing apparatus which reduces damage from plasma generated in a discharge vessel and lengthen the replacement cycle of the discharge vessel. A plasma processing apparatus 1 is provided with a processing chamber 2 partitioning a processing space, a discharge vessel 3 whose one end opens facing inside the processing chamber 2 and the other end is closed, an antenna 4 which is disposed around the discharge vessel 3 and generates an induced electric field to generate plasma in the discharge vessel 3 under reduced pressure, and an electromagnet 9 which is arranged around the discharge vessel 3 and forms a divergent magnetic field in the discharge vessel 3. The discharge vessel 3 has at is closed end portion a protrusion 15 projecting toward the processing chamber 2.

Abstract: The present invention provides a manufacturing method of a magneto-resistance effect element, in which the step coverage of a formed film can be enlarged and also the film can be deposited in a low temperature range. In an embodiment of the present invention, an insulating protective layer is formed on a multilayered structure by a plasma CVD apparatus in which a plasma source and a film deposition chamber are separated from each other by a partition wall plate. According to the present method, it is possible to deposit the protective layer without inviting the degradation of a magnetic characteristic and also to perform low temperature film deposition even at a temperature lower than 150° C. Hence, it is possible to deposit the protective layer while leaving resist and also to reduce the number of steps in the manufacturing of the magneto-resistance effect element having a multilayered structure.