Abstract: [Problem] To provide a method that can determine a thermal property of a substrate in a short time and a method that can determine a thermal process condition of an open-loop step. [Solving Means] In accordance with the substrate thermal property determining method of the present invention in a rapid thermal processing apparatus 1 comprising lamps 9 for heating a wafer W and temperature sensors T1 to T7 arranged so as to oppose the lamps 9, temperature data sequentially outputted from the temperature sensors T1 to T7 is obtained, while subjecting the wafer W arranged between the lamps 9 and temperature sensors T1 to T7 to pulsed heating with the lamps 9. Thereafter, the thermal property of the wafer W is determined by using the temperature data.

Abstract: [Problem] To provide a method that can determine a thermal property of a substrate in a short time and a method that can determine a thermal process condition of an open-loop step. [Solving Means] In accordance with the substrate thermal property determining method of the present invention in a rapid thermal processing apparatus 1 comprising lamps 9 for heating a wafer W and temperature sensors T1 to T7 arranged so as to oppose the lamps 9, temperature data sequentially outputted from the temperature sensors T1 to T7 is obtained, while subjecting the wafer W arranged between the lamps 9 and temperature sensors T1 to T7 to pulsed heating with the lamps 9. Thereafter, the thermal property of the wafer W is determined by using the temperature data.

Abstract: An ion implantation apparatus comprises an ion source section (18) for generating ions; an ion implantation section (14) for implanting the ions generated in the ion source section (18), in a substrate (92); a charged particle generator (62) for generating charged particles having a charge opposite to that of the ions; a beam guide section (24) having an inlet aperture (24a) for accepting the ions from the ion source section (18), an outlet aperture (24b) for delivering the ions into the ion implantation section (18), a guide tube (24c) extending from the inlet aperture (24a) to the outlet aperture (24b), and an introducing section (80) having an opening (82) thereof in an internal surface (24d) of the guide tube (24c), for introducing the charged particles from the charged particle generator (62) into the guide tube (24c); and a shield section (84) located between the opening (82) of the introducing section (80) and the outlet aperture (24b) inside the guide tube (24c).