Abstract: A light-emitting components containing body includes plural light-emitting components, a containing body which contains the plural light-emitting components. The containing body contains the plural light-emitting components of the same rank among light-emitting components that are classified into plural ranks according to positional deviations of their light emission portions from their light emission portion reference position.

Abstract: A cultivation system moves containers between a growing area and a monitoring area. The containers hold cultivation beds for cultivating plants, and the cultivation system includes: a grow light emitting unit emitting grow light for growing the cultivated plants in the containers located in the growing area; an imaging unit capturing the cultivated plants in the containers located in the monitoring area; and a control unit causing the grow light emitting unit to stop emitting the grow light when the imaging unit captures the plants.

Abstract: An irrigation device includes: a nozzle discharging liquid; a cover preventing the liquid discharged from the nozzle from splattering around the container; and a moving mechanism moving the cover between a first position and a second position. When moved to the first position, the cover covers space above the container. When moved to the second position, the cover is removed from the space above the container and the space is uncovered. The moving mechanism moves the cover (i) to the first position when the liquid is supplied to a plant, and (ii) to the second position when the supplying of the liquid to the plant ends.

Abstract: A light-emitting components containing body includes plural light-emitting components, a containing body which contains the plural light-emitting components. The containing body contains the plural light-emitting components of the same rank among light-emitting components that are classified into plural ranks according to positional deviations of their light emission portions from their light emission portion reference position.

Abstract: An irrigation device includes: a nozzle discharging liquid; a cover preventing the liquid discharged from the nozzle from splattering around the container; and a moving mechanism moving the cover between a first position and a second position. When moved to the first position, the cover covers space above the container. When moved to the second position, the cover is removed from the space above the container and the space is uncovered. The moving mechanism moves the cover (i) to the first position when the liquid is supplied to a plant, and (ii) to the second position when the supplying of the liquid to the plant ends.

Abstract: A cultivation system moves containers between a growing area and a monitoring area. The containers hold cultivation beds for cultivating plants, and the cultivation system includes: a grow light emitting unit emitting grow light for growing the cultivated plants in the containers located in the growing area; an imaging unit capturing the cultivated plants in the containers located in the monitoring area; and a control unit causing the grow light emitting unit to stop emitting the grow light when the imaging unit captures the plants.

Abstract: Provided is a component bonding method of bonding a semiconductor component having a thermosetting adhesive layer formed on a lower surface thereof to a circuit board having a resin layer formed on a surface thereof. In the method, wettability is improved by surface modification that performs a plasma treatment on a resin surface of the circuit board, the semiconductor component is held by a component holding nozzle having a heater, the adhesive layer is contacted to the surface-modified resin layer, and the adhesive layer is heated and thermally cured by the heater. Thereby, adhesion between the adhesive layer and the resin surface is improved, and thus the component holding nozzle can be separated from the semiconductor component without wait for completely hardening the adhesive layer. Accordingly, it is possible to improve productivity in the heat pressing process by reducing the time required for the component bonding.

Abstract: A plasma processing apparatus includes: a vacuum chamber; a plasma processing execution portion; a discharge state detecting unit; a window portion; a camera; a first storing portion; a second storing portion; and an image data extracting unit. The image data extracting unit extracts at least moving image data, which show the generation state of the abnormal discharge, from the first storing portion and stores the extracted moving image data in the second storing portion when the discharge state detecting unit detects the abnormal discharge.

Abstract: A plasma processing apparatus includes a vacuum chamber, a plasma processing execution portion, a discharge state detecting unit, a window portion, a camera, a first storing portion, a second storing portion and an image data extracting unit. When an abnormal discharge is detected, the image data extracting unit extracts at least moving image data showing a generation state of the abnormal discharge from the first storing portion and stores the extracted moving image data in the second storing portion. When plasma processing is ended without the detection of the abnormal discharge, the image data extracting unit extracts, from the first storing portion, moving image data of a predetermined specific period or still image data of a specific period derived from the moving image data of the first storing portion and stores the extracted moving image data or the extracted still image data in the second storing portion.

Abstract: To provide a substrate processing method and a semiconductor chip manufacturing method that enable low-cost formation of a mask for etching using plasma etching. During formation of a mask used in plasma dicing for separating a semiconductor wafer 1 into discrete semiconductor chips 1e by means of etching using plasma processing, there is adopted a method including printing a lyophobic liquid in an area on a rear surface 1b that is to be an objective of etching, thereby forming a lyophobic pattern made up of lyophobic films 3; supplying a low viscosity resin 4a and a high viscosity resin 4b, in this sequence, to the rear surface 1b on which the lyophobic pattern is formed, thereby forming a resin film 4 that is thicker than the lyophobic films 3 in an area where the lyophobic films 3 are not present; and curing the resin film 4, to thus form a mask 4* that covers an area except for the area to be etched.

Abstract: In the pickup apparatus wherein a chip adhered on a sheet is sucked and held by a picking nozzle and then picked up by the nozzle, a sheet push-up member configured by forming flexible elastic material such as rubber in a spherical shape is attached on the abutment supporting surface of the upper surface of a tool, then the push-up surface of the sheet push-up member is followed in a flat surface state along the lower surface of the sheet and abutted thereto in the moving down state of the picking nozzle, and then the push-up surface pushes up the lower surface of the sheet while being deformed in a upwardly protruded curved surface shape in the moving up operation where the picking nozzle moves up together with the chip. Thus, the chip can be released from the sheet from the outer peripheral side of the chip.

Abstract: A mask used when a semiconductor wafer is diced into individual semiconductor chips by plasma etching is formed as follows. First, a pattern of a liquid-repellent film is formed by printing a liquid-repellent liquid on the area to be etched on the rear surface of the semiconductor wafer. Next, a resin film thicker than the liquid-repellent film is formed in the area not having the liquid-repellent film by supplying a liquid resin to the rear surface on which the liquid-repellent pattern has been formed. Then, the resin film is cured to form the mask covering the area other than the area to be removed by the etching. This method allows the formation of an etching mask without using a high-cost method such as photolithography.

Abstract: To provide a substrate processing method and a semiconductor chip manufacturing method that enable low-cost formation of a mask for etching using plasma etching. During formation of a mask used in plasma dicing for separating a semiconductor wafer 1 into discrete semiconductor chips 1e by means of etching using plasma processing, there is adopted a method including printing a lyophobic liquid in an area on a rear surface 1b that is to be an objective of etching, thereby forming a lyophobic pattern made up of lyophobic films 3; supplying a low viscosity resin 4a and a high viscosity resin 4b, in this sequence, to the rear surface 1b on which the lyophobic pattern is formed, thereby forming a resin film 4 that is thicker than the lyophobic films 3 in an area where the lyophobic films 3 are not present; and curing the resin film 4, to thus form a mask 4* that covers an area except for the area to be etched.

Abstract: A plasma processing apparatus includes: a vacuum chamber; a plasma processing execution portion; a discharge state detecting unit; a window portion; a camera; a first storing portion; a second storing portion; and an image data extracting unit. The image data extracting unit extracts at least moving image data, which show the generation state of the abnormal discharge, from the first storing portion and stores the extracted moving image data in the second storing portion when the discharge state detecting unit detects the abnormal discharge.

Abstract: A plasma processing apparatus includes a vacuum chamber, a plasma processing execution portion, a discharge state detecting unit, a window portion, a camera, a first storing portion, a second storing portion and an image data extracting unit. When an abnormal discharge is detected, the image data extracting unit extracts at least moving image data showing a generation state of the abnormal discharge from the first storing portion and stores the extracted moving image data in the second storing portion. When plasma processing is ended without the detection of the abnormal discharge, the image data extracting unit extracts, from the first storing portion, moving image data of a predetermined specific period or still image data of a specific period derived from the moving image data of the first storing portion and stores the extracted moving image data or the extracted still image data in the second storing portion.

Abstract: In a laser processing step S3, boundary sections among semiconductor elements 2 of a resist film 4 are exposed to a laser beam 13a, to thus form in the resist film 4 boundary grooves 5—which partition the semiconductor elements 2 from each other—and to uncover a surface 1b of a semiconductor wafer 1 in the boundary grooves 5. In a plasma etching step S6, the surface 1b of the semiconductor wafer 1 exposed in the boundary grooves 5 is etched by means of plasma Pf of a fluorine-based gas, to thus separate the semiconductor wafer 1 into individual semiconductor chips 1? along the boundary grooves 5. Between the laser processing step S3 and the plasma etching step S6, there is performed processing pertaining to a boundary-groove-surface smoothing step S5 for smoothing, by means of plasma Po of oxygen gas, surfaces of the boundary grooves 5 having assumed an irregular shape in the laser processing step S3.

Abstract: In a semiconductor wafer including a plurality of imaginary-divided-regions which are partitioned by imaginary-dividing-lines that are respectively arranged in a grid-like arrangement on the semiconductor wafer and a circumferential line that is the outer periphery outline of the semiconductor wafer, a mask is placed so as to expose an entirety of surfaces of the wafer corresponding to respective removal-regions. The removal-regions are regions in approximately triangular form partitioned by the circumferential line of the wafer and the imaginary-dividing-lines. Then, plasma etching is performed on a mask placement-side surface of the wafer, by which the semiconductor wafer is divided into the individual semiconductor devices along dividing lines while portions corresponding to the removal-regions of the wafer are removed.

Abstract: A mask used when a semiconductor wafer is diced into individual semiconductor chips by plasma etching is formed as follows. First, a pattern of a liquid-repellent film is formed by printing a liquid-repellent liquid on the area to be etched on the rear surface of the semiconductor wafer. Next, a resin film thicker than the liquid-repellent film is formed in the area not having the liquid-repellent film by supplying a liquid resin to the rear surface on which the liquid-repellent pattern has been formed. Then, the resin film is cured to form the mask covering the area other than the area to be removed by the etching. This method allows the formation of an etching mask without using a high-cost method such as photolithography.

Abstract: In component mounting process for a plurality of components to be mounted onto a board, a plurality of bump electrode portions formed on mounting-side surfaces of the components to be mounted onto the board are brought into contact with a bonding-assistant agent so that the bonding-assistant agent is supplied thereto to allow the bonding-assistant agent-supplied components to be mounted onto the board, the component mounting process includes, supplying the bonding-assistant agent to a first component among the plurality of components, and starting the supply of the bonding-assistant agent to a second component among the plurality of components before completion of the mounting of the bonding-assistant agent-supplied first component onto the board.

Abstract: After a film layer 6 formed from a die attach film 4 and a UV tape 5 has been provided as a mask on a semiconductor wafer 1, boundary trenches 7 for partitioning semiconductor elements 2 formed on a circuit pattern formation surface 1a are formed in the film layer 6, thereby making a surface 1c of a semiconductor wafer 1 exposed. The exposed surface 1c of the semiconductor wafer 1 in the boundary trenches 7 is etched by means of plasma of a fluorine-based gas, and the semiconductor wafer 1 is sliced into semiconductor chips 1? along the boundary trenches 7.