Abstract: Disclosed is a timing circuit for generating a clock signal which indicates a timing for discriminating a data signal. The timing circuit includes a branching means for branching a data signal in two directions, a duty monitoring means for monitoring the duty of a first data signal output from the branching means, a duty varying means for varying the duty of a second data signal output from the branching means, a control circuit for controlling the duty varying means on the basis of the duty information output from the duty monitoring means so that the duty of the data signal to be output has a predetermined value and a clock signal generator for generating the clock signal for discriminating a data signal which is synchronous with the data signal output from the duty varying means.

Abstract: According to the present invention, a plurality of p-type semiconductor layers 13 are formed in a single row and a first layer insulating film 12 having first opening portions 16a and an n-side opening portion 17 is formed on the layers in an n-type semiconductor block 11. On the first layer insulating film 12, p-side electrodes 14 to connect to the p-type semiconductor layers 13 at the first opening portions 16a and an n-side electrode 55 (an n-side contact electrode 55a and an n-side pad electrode 55b) to connect with the n-type semiconductor block 11 at the n-side opening portion 17 are formed. Furthermore, p-side common wirings 4 to connect with specific p-side electrodes 14 are formed via a second layer insulating film 18. The p-side electrodes 14 and the n-side electrode 55 are formed using the same conductive film material through a single film formation and patterning process.

Abstract: In one aspect of the invention, a light-emitting semiconductor device has a light-emitting layer with a certain bandgap energy, an upper cladding layer with a higher bandgap energy, a first diffusion area extending into the light-emitting layer, a second diffusion area extending only into the upper cladding layer, and an electrode making contact with the second diffusion area, without covering any part of the first diffusion area. The second diffusion area conducts current to the first diffusion area, where light is emitted from a pn junction in the light-emitting layer. In another aspect of the invention, a semiconductor contact layer is provided to assure ohmic contact with the electrode, and the semiconductor contact layer is removed from the light-emitting area, avoiding absorption of light.

Abstract: A display unit of a job aiding apparatus disposed in each of work stations displays a job detail display image for showing a job detail in each of the work stations and a job result display image for showing a job result of the job detail. The worker in each of the work stations can perform a job easily according to the job detail shown in the job detail display image, and can easily and accurately confirm the job result according to the job result in the job result display image.

Abstract: A light-emitting semiconductor device has a semi-insulating semiconductor surface layer overlying a conductive semiconductor layer of a first conductive type. A diffusion region of a second conductive type extends through the semi-insulating semiconductor surface layer and ends in the conductive semiconductor layer. Positive and negative electrode contacts are provided on the upper surface of the device. Nonradiative recombination near the surface of the device is reduced because there is no pn junction in the semi-insulating semiconductor surface layer, and the device structure is suitable for matrix driving.

Abstract: A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a large-diameter wafer.

Abstract: A display unit of a job aiding apparatus disposed in each of work stations displays a job aid image for showing a job detail in each of the work stations. The worker in each of the work stations performs the job according to the displayed job detail. The job aiding apparatus decides whether a job result falls within a predetermined range or not, and changes the job aid image to a next job aid image only when the job result falls within the predetermined range. The worker can thus perform the job accurately and efficiently.

Abstract: A 1200 dpi LED may be manufactured without highly accurate mask alignment and provide good light radiation efficiency. A first interlayer dielectric is formed on a semiconductor substrate and has a plurality of first windows formed therein and aligned in a row. A diffusion region is formed in the semiconductor substrate through each of the first windows. An electrode is formed to have an area in contact with the corresponding diffusion region. Another electrode is formed on the other side of the substrate. A second interlayer dielectric is formed on the first interlayer dielectric such that the second interlayer dielectric does not overlap the area of the electrode and does not extend to a first perimeter of the area.

Abstract: A light emitting semiconductor device in which LEDs for emitting light different in wavelength from one another are densely integrated. First to fifth semiconductor layers are AlGaAs layers being different in Al composition ratio, and when it is assumed that the energy band gaps of the first to fifth semiconductor layers are respectively Eg1, Eg2, Eg3, Eg4 and Eg5, they satisfy the relation that Eg1<Eg2<Eg3<Eg4 and Eg1<Eg5. The pn fronts formed by p-type domains and the n-type domain of the semiconductor body are individually formed in the first semiconductor layer, the second semiconductor layer and the third semiconductor layer which form a stacked semiconductor layer. The LEDs emit light having wavelengths corresponding to the energy band gaps of the semiconductor layers in which the pn fronts are formed. These LEDs are integrated at intervals of a pitch between the p-type domains or the p-type electrodes.

Abstract: A light-emitting element is formed in a semiconductor substrate having a semi-insulating upper layer and a conductive lower layer. An impurity is diffused into both layers, forming a light-emitting area by creating a pn junction in the lower layer. An additional current-conducting area is formed by diffusion of the impurity into the upper layer. An electrode is formed on the substrate, making electrical contact with the current-conducting area, but not covering any part of the light-emitting area. The current-conducting area carries current from the electrode to the light-emitting area.

Abstract: A light-emitting element, or array of light-emitting elements, is formed by diffusion of an impurity into a semiconductor substrate, creating a light-emitting region. Following the diffusion, the surface zone of the light-emitting region, which includes crystal defects caused by the diffusion process, is removed by etching, thereby increasing the light-emitting efficiency by removing nonradiative recombination centers.

Abstract: In an array of light-emitting diodes formed by diffusion of an impurity into a semiconductor substrate, the width of the diodes in the array direction is between four-tenths and five-tenths of the array pitch. The width of the windows above the diodes is between three-tenths and four-tenths of the array pitch. Between one-fourth and one-half of the surface area of each diode is covered by an electrode making contact with the diode through the window. The distance from the centers of the light-emitting diodes at the ends of the array to the edges of the substrate is between twenty-five and sixty-five hundredths of the array pitch.

Abstract: A light-emitting semiconductor device has a planar structure including two multilayer reflecting layers, two cladding layers, and an active layer of a first conductive type. The cladding layers have bandgap energies exceeding the bandgap energy of the active layer. The multilayer reflecting layers each include at least one constituent layer with a bandgap energy exceeding the bandgap energy of the active layer. An area of a second conductive type extends from the upper surface of the device through the upper multilayer reflecting layer and upper cladding layer into the active layer, forming a pn junction in the active layer. This planar structure is suitable for high-yield manufacturing.

Abstract: A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a large-diameter wafer.

Abstract: A method of manufacturing a light-emitting or a light-receiving diode array chip. A first interlayer dielectric is formed in each of a plurality of chip areas on a substrate of a first conductivity type. Impurity diffusion regions of a second conductivity type are formed in the substrate using the first interlayer dielectric as a diffusion mask. An electrode is formed in contact with each of the impurity diffusion regions. The substrate is separated so that the plurality of chip areas are separated into individual chips. A second interlayer dielectric may be formed on the first interlayer dielectric after forming the impurity diffusion regions. The second interlayer dielectric is formed such that the second interlayer dielectric is absent from a second area along which the substrate is separated into the individual chips, at least in the vicinity of the last one of a plurality of windows.

Abstract: An equalizing filter with an optimized frequency response and improved reliability and quality, for equalizing a reception signal so as to regain its original waveform. The equalizing filter comprises a low-pass filter and a high-frequency booster circuit. With its limited passband, the low-pass filter rejects the noise components contained in the signal being processed. The high-frequency booster circuit has such a frequency response that exhibits a stepwise gain increase at high frequencies. Those two elements, composed of reliable passive components, are coupled in series to provide a combined frequency response that is optimized for the design of highly sensitive optical receivers. As integral part of the high-frequency booster circuit, the equalizing filter employs an inductor made of a bonding wire.

Abstract: A light-emitting-diode array includes a non-doped compound semiconductor layer between a substrate and a first compound semiconductor layer. A plurality of isolation regions extend from the first compound semiconductor layer to the surface of the non-doped compound semiconductor layer, and provide separation into isolated block regions each containing an equal number of diffusion regions. A plurality of shared electrode lines are connected to the diffusion regions in a plurality of the block regions, in such a relationship that diffusion regions selected from each of the block regions are connected to a common shared electrode. At least a surface portion of the substrate is formed of silicon. The density of the diffusion regions can be increased without increasing the number of the electrode pads. Moreover, the substrate is free from breakage or cracks.

Abstract: A dynamoelectric machine is provided with an arrangement in the form of a plurality of cooling tubes disposed in or adjacent the stator core of the machine and through which a coolant is caused to flow. The coolant tubes extend axially with respect to the rotor of the machine and are spaced around the circumference of the stator. In order to regulate the cooling efficiency and reduce the coolant pressure loss in the coolant tubes, a branching arrangement in combination with a valve arrangement is disposed in at least one of the end brackets of the machine to control the flow of coolant in parallel selectively through different combinations of cooling tubes. The branching arrangement includes a plurality of circumferentially disposed chambers which communicate with respective groups of cooling tubes in parallel, and the valve arrangement allows connection of these chambers selectively in different combinations to a coolant supply and a coolant exhaust.

Abstract: There is provided a method for arranging conductive bumps at predetermined positions penetrated through an insulating layer during a press integration stage to ensure electrical and thermal conductivities between a wiring pattern and a conductive metal as well as electrical connections between the wiring patterns. More specifically, the sharp tip of the conductive bump is subjected to plastic deformation to form the interconnections between the wiring patterns or between the wiring pattern and the conductive metal. Also provided is a method of manufacturing a printed wiring board. A synthetic resin sheet is sandwiched by the surface on which conductive bumps are formed into a laminate. The laminate is heated until the resin component of the synthetic resin sheet being is in a plastic state or up to a temperature not lower than the grass transition temperature of that resin. At that time, the conductive bumps are forced against the synthetic resin sheet and are penetrated therethrough.

Abstract: Light emitted from an array of light-emitting elements in an electrophotographic printer is transmitted through a birefringent plate that deflects light polarized in a first plane but does not deflect light polarized in a second plane perpendicular to the first plane, and through a polarization switching device that is controlled by an electrical signal so as to selectably transmit light polarized in either the first plane or the second plane. The transmitted light illuminates a photosensitive medium. Each light-emitting element can illuminate two dots on the photosensitive medium, depending on the state of the polarization switching device, thereby doubling the dot resolution.