Patents by Inventor Hiroshi Houzouji
Hiroshi Houzouji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11367671Abstract: An object of the invention is to improve the reliability of a power semiconductor device. The power semiconductor device according to the invention includes a semiconductor element, a first terminal and a second terminal that transmit current to the semiconductor element, a first base and a second base that are disposed to face each other while interposing a part of the first terminal, a part of the second terminal, and the semiconductor element between the first base and the second base, and a sealing material that is provided in a space between the first base and the second base. The second terminal includes an intermediate portion formed in such a way that a distance from the first terminal increases along a direction away from the semiconductor element. The intermediate portion is provided between the first base and the second base and in the sealing material.Type: GrantFiled: December 11, 2018Date of Patent: June 21, 2022Assignee: HITACHI ASTEMO, LTD.Inventors: Nobutake Tsuyuno, Hiroshi Houzouji
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Patent number: 11232994Abstract: A power semiconductor device includes a circuit body, first and second insulations, first and second bases, a case, and a distance regulation portion. The circuit body incudes a semiconductor element and a conductive portion. The first insulation and the second insulation oppose each other. The first base and second base also oppose each other. The case has a first opening portion covered with the first base and a second opening portion covered with the second base. The distance regulation portion has a first end that contacts the first base and a second end, that is opposite to the first end, and that contacts the second base. The distance regulation portion regulates a distance between the first base and the second base.Type: GrantFiled: May 22, 2018Date of Patent: January 25, 2022Assignee: Hitachi Astemo, Ltd.Inventors: Nobutake Tsuyuno, Hiromi Shimazu, Akihiro Namba, Akira Matsushita, Hiroshi Houzouji, Atsuo Nishihara, Toshiaki Ishii, Takashi Hirao
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Publication number: 20200294888Abstract: An object of the invention is to improve the reliability of a power semiconductor device. The power semiconductor device according to the invention includes a semiconductor element, a first terminal and a second terminal that transmit current to the semiconductor element, a first base and a second base that are disposed to face each other while interposing a part of the first terminal, a part of the second terminal, and the semiconductor element between the first base and the second base, and a sealing material that is provided in a space between the first base and the second base. The second terminal includes an intermediate portion formed in such a way that a distance from the first terminal increases along a direction away from the semiconductor element. The intermediate portion is provided between the first base and the second base and in the sealing material.Type: ApplicationFiled: December 11, 2018Publication date: September 17, 2020Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.Inventors: Nobutake TSUYUNO, Hiroshi HOUZOUJI
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Publication number: 20200227333Abstract: An object of the present invention is to provide a power semiconductor device enabling maintenance in reliability and improvement in productivity. According to the present invention, provided are: a circuit body including a semiconductor element and a conductive portion; a first insulation and a second insulation opposed to each other, the circuit body being interposed between the first insulation and the second insulation; a first base and a second base opposed to each other, the circuit body, the first insulation, and the second insulation being interposed between the first base and the second base; a case having a first opening portion covered with the first base and a second opening portion covered with the second base; and a distance regulation portion provided in space between the first base and the second base, the distance regulation portion regulating a distance between the first base and the second base in contact with the first base and the second base.Type: ApplicationFiled: May 22, 2018Publication date: July 16, 2020Inventors: Nobutake TSUYUNO, Hiromi SHIMAZU, Akihiro NAMBA, Akira MATSUSHITA, Hiroshi HOUZOUJI, Atsuo NISHIHARA, Toshiaki ISHII, Takashi HIRAO
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Patent number: 9754855Abstract: An object of the present invention is to provide a semiconductor module that can improve the dissipation of heat from semiconductor elements toward a cooling body. A semiconductor module of the present invention includes a plurality of resin-molded semiconductor devices that are mounted on a single metal base and are electrically connected. The plurality of semiconductor devices each have a structure in which a metal heat dissipation plate, which is formed on a surface of an insulating substrate on the side opposite to a semiconductor-element-mount surface, is exposed from a resin mold, and the metal heat dissipation plate is embedded in each opening provided in the metal base, so that the rear surface of the metal heat dissipation plate becomes a plane to be disposed on a cooling body.Type: GrantFiled: January 27, 2014Date of Patent: September 5, 2017Assignee: Hitachi, Ltd.Inventors: Hiroshi Houzouji, Akitoyo Konno
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Publication number: 20160336252Abstract: An object of the present invention is to provide a semiconductor module that can improve the dissipation of heat from semiconductor elements toward a cooling body. A semiconductor module of the present invention includes a plurality of resin-molded semiconductor devices that are mounted on a single metal base and are electrically connected. The plurality of semiconductor devices each have a structure in which a metal heat dissipation plate, which is formed on a surface of an insulating substrate on the side opposite to a semiconductor-element-mount surface, is exposed from a resin mold, and the metal heat dissipation plate is embedded in each opening provided in the metal base, so that the rear surface of the metal heat dissipation plate becomes a plane to be disposed on a cooling body.Type: ApplicationFiled: January 27, 2014Publication date: November 17, 2016Inventors: Hiroshi HOUZOUJI, Akitoyo KONNO
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Patent number: 7579805Abstract: A semiconductor device in which the lifetime of mounted components can be prolonged. A cooling system for controlling the temperature of a refrigerant through a heating section and a radiator is provided. The semiconductor device is connected to the cooling system and is cooled. A variation width (?T1) of temperature controlled by the cooling system through the heating section and the radiator is smaller than a temperature variation (?T2) of the refrigerant caused by variations in operating conditions of the semiconductor device (?T1??T2).Type: GrantFiled: January 26, 2004Date of Patent: August 25, 2009Assignee: Hitachi, Ltd.Inventors: Atsushi Saito, Katsuhiro Higuchi, Osamu Otsuka, Hidekazu Nishidai, Hiroshi Houzouji, Toshiaki Morita, Yoshimasa Takahashi, Toshiya Sato
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Publication number: 20080315401Abstract: A power semiconductor module has a silicon nitride insulated substrate, a metal circuit plate made of Cu or a Cu alloy, which is disposed on one surface of the silicon nitride insulated substrate, a semiconductor chip mounted on the metal circuit plate, and a heat dissipating plate made of Cu or a Cu alloy, which is disposed on the other surface of the silicon nitride insulated substrate; a carbon fiber-metal composite made of carbon fiber and Cu or a Cu alloy is provided between the silicon nitride insulated substrate and the metal circuit plate; the thermal conductivity of the carbon fiber-metal composite in a direction in which carbon fiber of the carbon fiber-metal composite is oriented is 400 W/m·k or more. Accordingly, a power semiconductor module that has a low thermal resistance between the semiconductor chip and a heat dissipating mechanism and also has improved cooling capacity is provided.Type: ApplicationFiled: June 18, 2008Publication date: December 25, 2008Applicant: Hitachi, Ltd.Inventors: Hisayuki Imamura, Toshiaki Morita, Hiroshi Houzouji
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Publication number: 20070215316Abstract: A semiconductor device in which the lifetime of mounted components can be prolonged. A cooling system for controlling the temperature of a refrigerant through a heating section (1) and a radiator (2) is provided. The semiconductor device (100) is connected to the cooling system and is cooled. A variation width (?T1) of temperature controlled by the cooling system through the heating section (1) and the radiator (2) is larger than a temperature variation (?T2) of the refrigerant caused by variations in operating conditions of the semiconductor device (100) (?T1>?T2).Type: ApplicationFiled: January 26, 2004Publication date: September 20, 2007Applicant: Hitachi, Ltd.Inventors: Atsushi Saito, Katsuhiro Higuchi, Osamu Otsuka, Hidekazu Nishidai, Hiroshi Houzouji, Toshiaki Morita, Yoshimasa Takahashi, Toshiya Sato