Abstract: A semiconductor device comprising the bump containing magnetic body, magnetic body, the bump including non-magnetic body for at least partially covering the magnetic body, mixture of magnetic particles and non-magnetic particles and the bump including baked magnetic particles and baked non-magnetic particles.

Abstract: A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

Abstract: A pipe-end-connecting joint comprisse a nipple 1 inserted in the pipe end, a holder 2 for tightening the outer circumference of the pipe end, and an elastic packing 3 divided into half parts and attached in the holder 2. The nipple 1 includes a tubular portion 11 provided in one longitudinal end side thereof so as to be inserted in the pipe end, a connection portion 12 provided in the other longitudinal end side thereof so as to be connected to another joint, and a flange portion 13 provided in a longitudinal intermediate portion thereof so as to protrude outward.

Abstract: There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C—H bonds and C—C bonds, and a total amount of C atoms forming the C—H bonds and C atoms forming the C—C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.

Abstract: A semiconductor device comprising a substrate, a plurality of dielectric films formed on the substrate, laid one upon another, and a fuse interconnect-wire formed above the substrate and covered with a predetermined one of the dielectric films, and including a fuse main body which is to be blown to electrically disconnect the fuse interconnect-wire, which is smaller than a bottom of a fuse-blowing recess made in the predetermined dielectric film, which has a length not less than the diameter of a fuse-blowing laser beam and which opposes the bottom of the fuse-blowing recess.

Abstract: The spiral pipe joint comprises a nipple 1, a caulking ring 2 and a flexible string-shaped pressure contact member 3. After an inserting portion 11 of the nipple 1 is inserted into a pipe body P, the pressure contact member 3 is wound once or more times around the outer peripheral surface of the pipe body P existing above the inserting portion 11, and the caulking ring 2 is placed on the outside of the thus wound pressure contact member 3 and is compressed in the center direction of the pipe body P to thereby reduce the diameter of the caulking ring 2 in such a manner that the caulking amount thereof on the small-diameter stepped portion 13 is larger than the step level difference between the inserting portion 11 and small-diameter stepped portion 13.

Abstract: There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C—H bonds and C—C bonds, and a total amount of C atoms forming the C—H bonds and C atoms forming the C—C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.

Abstract: A semiconductor device is disclosed, which comprises a semiconductor substrate, an interlayer insulation film formed above the semiconductor substrate, a fuse formed on or in the interlayer insulation film, and a wiring layer formed in a portion of the interlayer insulation film, which is under the fuse, the wiring layer being isolated from the fuse and having a width smaller than the fuse.

Abstract: A deposition apparatus includes a chemical discharging nozzle for continuously discharging chemicals to a substrate to be processed, a gas spraying section arranged below the chemical discharging nozzle, for spraying gas on the chemicals discharged from the chemical discharging nozzle and changing an orbit of the chemicals by pressure of the gas, a chemical collecting section for collecting the chemicals the orbit of which is changed by the gas spraying section, the chemical collecting section being arranged so as to interpose the chemicals between the gas spraying section and the chemical collecting section, and a moving section for moving the chemical discharging nozzle and the substrate relatively with each other. The gas spraying section includes a laser oscillator for emitting a laser beam, and a gas generating film that generates the gas when heated and gasified by the laser beam emitted from the laser oscillator.

Abstract: The spiral pipe joint comprises a nipple 1, a caulking ring 2 and a flexible string-shaped pressure contact member 3. After an inserting portion 11 of the nipple 1 is inserted into a pipe body P, the pressure contact member 3 is wound once or more times around the outer peripheral surface of the pipe body P existing above the inserting portion 11, and the caulking ring 2 is placed on the outside of the thus wound pressure contact member 3 and is compressed in the center direction of the pipe body P to thereby reduce the diameter of the caulking ring 2 in such a manner that the caulking amount thereof on the small-diameter stepped portion 13 is larger than the step level difference between the inserting portion 11 and small-diameter stepped portion 13.

Abstract: With the same screw diameter as in conventional screw extruders, the screw length is reduced, whereby the material residue is reduced, the throughput is increased, the screw motive power is reduced, the temperature control is facilitated to prevent rubber scorching, and extrusion molding of a vulcanizalbe rubber composition is made possible at a lower temperature.

Abstract: A laser processing apparatus comprises a laser oscillator for producing a laser beam to selectively remove part of a substrate to be processed, a scanning system for applying the laser beam to an arbitrary position of the substrate and incident means for applying the laser beam to the substrate substantially at right angle.

Abstract: Oxime compounds of formula (1) wherein R1, R2, and R3 are independently halogen, C1-C3 alkyl, C1-C3 halolalkyl, C1-C3 alkoxy, C1-C3 haloalkoxy, nitro, or cyano; R4 is 3,3-dihalogeno-2-propenyl; a is an integer of 0 to 2; Y is oxygen, sulfur, or NH; Z is oxygen, sulfur, or NR5 wherein R5 is hydrogen, acetyl, or C1-C3 alkyl; and X is of formula (2) insecticidal/acaricidal agents containing them as active ingredients; and intermediates for their production.

Abstract: Oxime compounds of formula (1) wherein R1, R2, and R3 are independently halogen, C1-C3 alkyl, C1-C3 haloalalkyl, C1-C3 alkoxy, C1-C3 haloalkoxy, nitro, or cyano; R4 is 3,3-dihalogeno-2-propenyl; a is an integer of 0 to 2; Y is oxygen, sulfur, or NH; Z is oxygen, sulfur, or NR5 wherein R5 is hydrogen, acetyl, or C1-C3 alkyl; and X is of formula (2) insecticidal/acaricidal agents containing them as active ingredients; and intermediates for their production.

Abstract: There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C—H bonds and C—C bonds, and a total amount of C atoms forming the C—H bonds and C atoms forming the C—C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.

Abstract: In a laser beam machining method, a liquid, through which a laser beam can be transmitted, is supplied to the target surface of an object to be processed. A laser beam is guided to the target surface through the liquid. The laser beam processes the target surface under the application of ultrasonic vibration.

Abstract: There is provided a semiconductor device in which redundancy fuses formed in an upper layer wiring region can be cut without damaging an underlying Si substrate or adjacent regions. The semiconductor device comprises a lower layer wiring formed within an interlayer insulating film on the Si substrate, and an upper layer metal wiring made of Al, Cu or the like, formed above the lower layer wiring and connected thereto through a via metal, wherein the redundancy fuses are formed in the same wiring layer as the upper layer metal wiring. For cutting a fuse by irradiating with a laser having a wavelength in a range of 1,000 to 1,100 nm and a beam diameter D (&mgr;m), the fuse may be designed to have a film thickness T (&mgr;m) and a width W (&mgr;m) which satisfy T≦(−0.15 (D+2&sgr;)+0.

Abstract: Oxime compounds of formula (1) 1

Abstract: A deposition apparatus includes a chemical discharging nozzle for continuously discharging chemicals to a substrate to be processed, a gas spraying section arranged below the chemical discharging nozzle, for spraying gas on the chemicals discharged from the chemical discharging nozzle and changing an orbit of the chemicals by pressure of the gas, a chemical collecting section for collecting the chemicals the orbit of which is changed by the gas spraying section, the chemical collecting section being arranged so as to interpose the chemicals between the gas spraying section and the chemical collecting section, and a moving section for moving the chemical discharging nozzle and the substrate relatively with each other. The gas spraying section includes a laser oscillator for emitting a laser beam, and a gas generating film that generates the gas when heated and gasified by the laser beam emitted from the laser oscillator.

Abstract: There is provided a sound-absorbing and a heat-insulating duct comprising a nonwoven cloth layer 1, a reinforcing core 2, a foam strip layer 3, a bonding resin 4 and resin-coating layer 5. The nonwoven cloth layer 1 is formed by wound spirally a nonwoven cloth 10 into a tube-like shape in which adjacent side edges of the adjacent nonwoven cloths 10 are brought in abutment against or lapped with each other so as to form a bonding portion 1a. The reinforcing core 2 made of hard synthetic resin material is wound spirally on the bonding portion 1a while a surface of the reinforcing core 2 being brought into contact with the nonwoven cloth 10 is welded or bonded to the nonwoven cloth 10. The foam strip layer 3 is formed by wound spirally a foam resin strip 30 having a width approximately equal to a width of the nonwoven cloth 10. Both adjacent edges 3a, 3b of the foam resin strip are disposed on adjacent reinforcing cores 2, 2 respectively.