Abstract: A method for evaluating atomic vacancies in a silicon wafer surface layer includes: element formation in which a pair of comb-shaped electrodes are formed on the same surface of a silicon sample over piezoelectric thin films; detection during which the sample is cooled and an ultrasonic pulse generated from one electrode while an external magnetic field is applied, the ultrasonic pulse being propagated through the sample surface and received by the other electrode, and a phase difference being detected between the ultrasonic pulse generated by the one electrode and the ultrasonic pulse received by the other electrode; and evaluation during which the sample surface elastic constant is determined on the basis of the phase difference, and the atomic vacancies in the sample surface are evaluated on the basis of changes in the elastic constant according to temperature or changes in the elastic constant according to the magnetic field intensity.

Abstract: A quantitative evaluation method, a method for manufacturing a silicon wafer, and a silicon wafer manufactured by the method, enabling more efficient evaluation of the concentration of atomic vacancies existing in a silicon wafer. The quantitative evaluation method includes steps of: oscillating, in a state in which an external magnetic field is applied to a silicon wafer (26) while keeping the silicon wafer (26) at a constant temperature, an ultrasonic wave pulse and receiving a measurement wave pulse obtained after the ultrasonic wave pulse is propagated through the silicon wafer (26) for detecting a phase difference between the ultrasonic wave pulse and the measurement wave pulse; and calculating an elastic constant from the phase difference. The external magnetic field is changed to calculate the elastic constant corresponding to a change in the external magnetic field for evaluating a concentration of atomic vacancies in the silicon wafer (26).

Abstract: A quantitative evaluation device and method of an atomic vacancy, which are capable of efficiently and quantitatively evaluating an atomic vacancy existing in a silicon wafer. A quantitative evaluation device 1 is equipped with a detector 5 including an ultrasonic generator 27 and an ultrasonic receiver 28, a silicon sample 6 formed with the ultrasonic generator 27 and the ultrasonic receiver 28 on a silicon wafer 26 comprising perfect crystal silicon, a magnetic force generator 4 for applying an external magnetic field to the silicon sample 6, and a cooler 3 capable of cooling and controlling the silicon sample 6 to a range of temperatures lower than or equal to 50K.

Abstract: A quantitative evaluation method, a method for manufacturing a silicon wafer, and a silicon wafer manufactured by the method, enabling more efficient evaluation of the concentration of atomic vacancies existing in a silicon wafer. The quantitative evaluation method includes steps of: oscillating, in a state in which an external magnetic field is applied to a silicon wafer (26) while keeping the silicon wafer (26) at a constant temperature, an ultrasonic wave pulse and receiving a measurement wave pulse obtained after the ultrasonic wave pulse is propagated through the silicon wafer (26) for detecting a phase difference between the ultrasonic wave pulse and the measurement wave pulse; and calculating an elastic constant from the phase difference. The external magnetic field is changed to calculate the elastic constant corresponding to a change in the external magnetic field for evaluating a concentration of atomic vacancies in the silicon wafer (26).

Abstract: A secondary battery in which temperature rise (heat generation) can be measured accurately at the time of quick charge/discharge, and a battery which can be configured readily using the secondary batteries while realizing low resistance. Separately from the positive and negative electrode terminals of a flat laminate film secondary battery, a third terminal is fixed perpendicularly thereto. The third terminal is connected with the electrode current collecting parts of a power generating element body constituting the secondary battery (1) and imparted with a potential equal to that of any one of the positive and negative electrode terminals. Inner temperature of the secondary battery is determined by measuring the temperature of the third terminal and a cell balancer circuit, or the like, is connected with the third terminal. The battery is configured by connecting the positive and negative electrode terminals directly in series.

Abstract: There is provided a quantitative evaluation device or the like of atomic vacancy existing in a silicon wafer in which the atomic vacancy concentration in the silicon wafer can be quantitatively evaluated by forming a rationalized thin-film transducer on a surface of a silicon sample without conducting an acceleration treatment for enhancing the concentration.

Abstract: A secondary battery in which temperature rise (heat generation) can be measured accurately at the time of quick charge/discharge, and a battery which can be configured readily using the secondary batteries while realizing low resistance. Separately from the positive and negative electrode terminals of a flat laminate film secondary battery, a third terminal is fixed perpendicularly thereto. The third terminal is connected with the electrode current collecting parts of a power generating element body constituting the secondary battery (1) and imparted with a potential equal to that of any one of the positive and negative electrode terminals. Inner temperature of the secondary battery is determined by measuring the temperature of the third terminal and a cell balancer circuit, or the like, is connected with the third terminal. The battery is configured by connecting the positive and negative electrode terminals directly in series.

Abstract: A wafer processing method is provided that includes the steps of heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 ?m on the silicon wafer, and controlling formation of oxygen precipitates within the silicon wafer by selectively setting a heating temperature for heating the silicon wafer and an irradiation intensity of the infrared ray.

Abstract: A quantitative evaluation device and method of an atomic vacancy, which are capable of efficiently and quantitatively evaluating an atomic vacancy existing in a silicon wafer. A quantitative evaluation device 1 is equipped with a detector 5 including an ultrasonic generator 27 and an ultrasonic receiver 28, a silicon sample 6 formed with the ultrasonic generator 27 and the ultrasonic receiver 28 on a silicon wafer 26 comprising perfect crystal silicon, a magnetic force generator 4 for applying an external magnetic field to the silicon sample 6, and a cooler 3 capable of cooling and controlling the silicon sample 6 to a range of temperatures lower than or equal to 50K.

Abstract: A flat secondary battery having a fusion-bonded sealing type laminate film as an armored body tends to be inferior in sealing reliability to a flat secondary battery having a welded sealing type can as an armored body, due to a difference in sealing method between the two batteries. Therefore, there has been a large challenge of finding the way to make the sealing reliability of the laminate film secondary battery closer to that of the can type secondary battery. The sealing reliability is improved by further increasing a sealing force without taking any measure to the existing laminate film secondary battery, in such a manner that the fusion bonding area of the existing laminate film secondary battery is sandwiched from upside and downside to be cramped from outside so as to mechanically add a sealing force from outside to the sealing force of the laminate film itself.

Abstract: A Si single crystal having no defect region is stably grown by clearly detecting a type of a defect region or a defect free region of Si single crystal grown at a certain pulling rate profile and feeding back the data to the subsequent pulling. In the production of Si single crystal ingot by a CZ method, a concentration distribution of atomic vacancy in a cross-section of a precedent grown Si single crystal is detected by the direct observation method of atomic vacancy and then fed back to the subsequent pulling treatment to adjust a pulling rate profile of the subsequent pulling.

Abstract: There is provided a quantitative evaluation device or the like of atomic vacancy existing in a silicon wafer in which the atomic vacancy concentration in the silicon wafer can be quantitatively evaluated by forming a rationalized thin-film transducer on a surface of a silicon sample without conducting an acceleration treatment for enhancing the concentration.

Abstract: A flat secondary battery having a fusion-bonded sealing type laminate film as an armored body tends to be inferior in sealing reliability to a flat secondary battery having a welded sealing type can as an armored body, due to a difference in sealing method between the two batteries. Therefore, there has been a large challenge of finding the way to make the sealing reliability of the laminate film secondary battery closer to that of the can type secondary battery. The sealing reliability is improved by further increasing a sealing force without taking any measure to the existing laminate film secondary battery, in such a manner that the fusion bonding area of the existing laminate film secondary battery is sandwiched from upside and downside to be cramped from outside so as to mechanically add a sealing force from outside to the sealing force of the laminate film itself.

Abstract: A wafer processing method is provided that includes the steps of heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 ?m on the silicon wafer, and controlling formation of oxygen precipitates within the silicon wafer by selectively setting a heating temperature for heating the silicon wafer and an irradiation intensity of the infrared ray.

Abstract: A lithium ion secondary battery comprising a battery element obtained by alternately stacking a plurality of positive electrodes having layers of a positive electrode active material formed on both sides of positive current collectors and a plurality of negative electrodes having layers of a negative electrode active material formed on both sides of negative current collectors through separators in such a way that the positive electrode active material layers face the negative electrode active material layers, the battery element impregnated with liquid electrolyte and held by a laminate case, the lithium ion secondary battery having a 10-second output value of 3000 W/kg or above at a depth of discharge capacity of 50% and 25° C and having the following configuration in which: (1) the positive electrode active material has an average particle size of 3 to 10 ?m and the positive electrode excluding the current collector has a thickness of 30 to 110 ?m, (2) the negative electrode active material has an average

Abstract: A battery module includes a battery cell having a laminate overcoat, a pair of rubber sheets, a pair of pressure plates, and a pair of housing members from the internal to the external of the battery module. An intervention member including four poles is interposed between the pressure plate and the housing member at the central area of the battery cell to alleviate the stress concentration on the peripheral area of the battery cell. The intervention member may be formed separately from or integrated with the pressure plate.

Abstract: The battery is constituted to satisfy B/A?0.57, wherein “A” represents a width of an active material region and “B” represents a width of each electrode terminal.

Abstract: A secondary battery in which temperature rise (heat generation) can be measured accurately at the time of quick charge/discharge, and a battery which can be configured readily using the secondary batteries while realizing low resistance. Separately from the positive and negative electrode terminals of a flat laminate film secondary battery, a third terminal is fixed perpendicularly thereto. The third terminal is connected with the electrode current collecting parts of a power generating element body constituting the secondary battery (1) and imparted with a potential equal to that of any one of the positive and negative electrode terminals. Inner temperature of the secondary battery is determined by measuring the temperature of the third terminal and a cell balancer circuit, or the like, is connected with the third terminal. The battery is configured by connecting the positive and negative electrode terminals directly in series.

Abstract: A flat secondary battery having a fusion-bonded sealing type laminate film as an armored body tends to be inferior in sealing reliability to a flat secondary battery having a welded sealing type can as an armored body, due to a difference in sealing method between the two batteries. Therefore, there has been a large challenge of finding the way to make the sealing reliability of the laminate film secondary battery closer to that of the can type secondary battery. The sealing reliability is improved by further increasing a sealing force without taking any measure to the existing laminate film secondary battery, in such a manner that the fusion bonding area of the existing laminate film secondary battery is sandwiched from upside and downside to be cramped from outside so as to mechanically add a sealing force from outside to the sealing force of the laminate film itself.

Abstract: A semiconductor substrate of the present invention is a DSP wafer or Semi-DSP wafer (FIG. 2) having a flatness of an SFQR value ≦70 (nm) and containing boron at a concentration not lower than 5×1016 (atoms/cm3) nor higher than 2×1017 (atoms/cm3) within 95% or more of rectangular regions of 25×8 (mm2) arranged on a front face of the substrate. Specifically, a silicon crystal layer by an epitaxial growth is formed on a front face of a silicon substrate having the above substrate boron concentration.