Abstract: An electric storage device includes a storage module and a mounting plate. The storage module includes a plurality of storage cells stacked in a stacking direction and has an end surface in the stacking direction. The storage module is mounted on the mounting plate. The mounting plate includes a fastening part and a displacement absorbing part. The storage module is connected to the mounting plate at the fastening part. The displacement absorbing part absorbs displacement of the storage module in the stacking direction. The fastening part is provided between the displacement absorbing part and the end surface of the storage module in the stacking direction.

Abstract: A photographing apparatus includes an image sensor which images a plurality of images; an image processor configured to set one image as a reference image and each remaining image as a comparative image; an image processor configured to generate a reference map divided into blocks; an image processor configured to generate a comparative map divided into blocks; an image processor configured to generate a change-detection map indicating coinciding or non-coinciding blocks between the reference map and the comparative map, per each respective block, upon the reference map and the comparative map being compared; an image processor configured to obtain a synthesized image of the images; and an image processor configured to replace at least a part of the synthesized image with a corresponding part of the reference image based on the change-detection map.

Abstract: The present invention addresses the problem of providing an antibody titer-increasing agent, such as an adjuvant, capable of sustaining an effect achieved by, for example, vaccination, which is an antibody titer-increasing agent such as an adjuvant that is safe, convenient and economical and can be easily taken irrespective of age, and a method for manufacturing the same. A method for increasing an antibody titer and a method for enhancing the effect of a vaccine, each method comprising using Lactobacillus delbrueckii subspecies bulgaricus OLL1073R-1 or a culture thereof; and an antibody titer-increasing agent such as an adjuvant that comprises Lactobacillus delbrueckii subspecies bulgaricus OLL1073R-1 or a culture thereof.

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Abstract: Provided is a battery pack including: an exterior case formed with one or more hole sections; a battery cell in which a positive electrode terminal section is formed on one end surface thereof and a negative electrode terminal section is formed on the other end surface thereof; a battery holder having a plurality of battery cell receiving sections receiving the battery cell; and a metal plate joined to the battery holder and formed with a terminal contact section.

Abstract: There is provided a battery holder including: a plurality of battery cell receiving sections for receiving a battery cell. A deformation section elastically deformed depending on transmission of external impact, and a space section for allowing the deformation section to be elastically deformed are formed between a peripheral surface of one battery cell receiving section and a peripheral surface of another battery cell receiving section.

Abstract: A battery pack includes: a plurality of battery cells (1); a cell support that holds the plurality of battery cells; a connection part (6) that connects to the plurality of battery cells; and a circuit substrate (8) that is used to mount circuits for the plurality of battery cells. The cell support (2) is integrally formed with battery cell storage units (3) that store the plurality of battery cells, a base unit (4) that supports the battery cell storage units, and impact relaxation ribs (21), and each of the impact relaxation ribs is formed between an outer circumference of the base unit and an exterior surface of each of the battery cell storage units, and is configured in a shape capable of being transformed in a direction to which impact is applied.

Abstract: Provided is an edible fat or oil which has excellent oxidative stability and retains the intact flavor inherent in the fat or oil. The edible fat or oil contains a water-soluble antioxidizing substance, which is originally sparingly soluble in fats and oils, in an amount of 5-1,000 weight ppm and has an emulsifier content that is not more than twice the content of the water-soluble antioxidizing substance.

Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: A storage element includes a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: Provided is an antiallergic agent including, as an active ingredient, a fermentation product of a propionic acid bacterium. Also provided is a method of using the antiallergic agent to prevent and/or improve skin roughness.

Abstract: A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.

Abstract: Provided is a battery pack including: an exterior case formed with one or more hole sections; a battery cell in which a positive electrode terminal section is formed on one end surface thereof and a negative electrode terminal section is formed on the other end surface thereof; a battery holder having a plurality of battery cell receiving sections receiving the battery cell; and a metal plate joined to the battery holder and formed with a terminal contact section.

Abstract: [Object] To provide a recording method for a magnetic memory device including a recording layer that is capable of changing a magnetization direction and holds information as a magnetization direction of a magnetic body and a magnetization reference layer that is provided with respect to the recording layer with an insulation layer interposed therebetween and becomes a reference of the magnetization direction, the magnetic memory device being recorded with information by a current flowing between the recording layer and the magnetization reference layer via the insulation layer, the recording method being capable of maintaining, even when a write pulse considerably higher than an inversion threshold value is applied, a write error rate of 10?25 or less that is obtained when a write pulse a little larger than the inversion threshold value is applied. [Solving Means] While taking time of 2 ns or more, write power injected at a time a write pulse falls is reduced gradually.