Patents by Inventor Hiroshi Kawaura
Hiroshi Kawaura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10229814Abstract: A plasma processing apparatus has a circular chamber having an opening portion which serves as a plasma ejection port surrounded by a dielectric member, a gas supply pipe for introducing gas into the inside of the chamber, a coil provided in the vicinity of the chamber, a high-frequency power supply connected to the coil, and a base material mounting table.Type: GrantFiled: October 26, 2012Date of Patent: March 12, 2019Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Tomohiro Okumura, Hiroshi Kawaura, Tetsuya Yukimoto
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Patent number: 10147585Abstract: A plasma processing apparatus having a dielectric member that surrounds a circular chamber having a long shape and communicating with an opening portion having a long and linear shape, a gas supply pipe for introducing gas into an inside of the circular chamber, a coil provided in a vicinity of the circular chamber and having a long shape in parallel with a longitudinal direction of the opening portion, a high-frequency power supply connected to the coil, a base material mounting table that mounts a base material, and a moving mechanism that allows relative movement between the circular chamber and the base material mounting table in a perpendicular direction with respect to an longitudinal direction of the opening portion.Type: GrantFiled: April 8, 2014Date of Patent: December 4, 2018Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Tomohiro Okumura, Hiroshi Kawaura, Tetsuya Yukimoto
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Patent number: 9601330Abstract: To provide a plasma processing device and a plasma processing method capable of generating plasma stably and efficiently and processing the entire desired treated region of a substrate efficiently for a short period of time.Type: GrantFiled: September 11, 2013Date of Patent: March 21, 2017Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Tomohiro Okumura, Hiroshi Kawaura
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Patent number: 9343269Abstract: A plasma processing apparatus has a long chamber having an opening portion, a gas supply apparatus that supplies gas into the chamber, a spiral coil having a long shape in parallel with the longitudinal direction of the chamber, a high-frequency electric power supply connected to the spiral coil, a base material mounting table which is disposed opposite to the opening portion and holds a base material and a moving mechanism which is disposed in parallel with the longitudinal direction of the chamber and the longitudinal direction of the opening portion, and enables the chamber and the base material mounting table to relatively move perpendicularly with respect to the longitudinal direction of the opening portion.Type: GrantFiled: October 26, 2012Date of Patent: May 17, 2016Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Tomohiro Okumura, Hiroshi Kawaura
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Publication number: 20150294866Abstract: To provide a plasma processing device and a plasma processing method capable of generating plasma stably and efficiently and processing the entire desired treated region of a substrate efficiently for a short period of time.Type: ApplicationFiled: September 11, 2013Publication date: October 15, 2015Inventors: TOMOHIRO OKUMURA, HIROSHI KAWAURA
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Patent number: 8802567Abstract: In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.Type: GrantFiled: December 5, 2013Date of Patent: August 12, 2014Assignee: Panasonic CorporationInventors: Tomohiro Okumura, Ichiro Nakayama, Hiroshi Kawaura, Tetsuya Yukimoto
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Publication number: 20140220784Abstract: A plasma processing apparatus having a dielectric member that surrounds a circular chamber having a long shape and communicating with an opening portion having a long and linear shape, a gas supply pipe for introducing gas into an inside of the circular chamber, a coil provided in a vicinity of the circular chamber and having a long shape in parallel with a longitudinal direction of the opening portion, a high-frequency power supply connected to the coil, a base material mounting table that mounts a base material, and a moving mechanism that allows relative movement between the circular chamber and the base material mounting table in a perpendicular direction with respect to an longitudinal direction of the opening portion.Type: ApplicationFiled: April 8, 2014Publication date: August 7, 2014Applicant: Panasonic CorporationInventors: TOMOHIRO OKUMURA, HIROSHI KAWAURA, TETSUYA YUKIMOTO
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Publication number: 20140094040Abstract: In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.Type: ApplicationFiled: December 5, 2013Publication date: April 3, 2014Applicant: Panasonic CorporationInventors: Tomohiro OKUMURA, Ichiro NAKAYAMA, Hiroshi KAWAURA, Tetsuya YUKIMOTO
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Patent number: 8624340Abstract: In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.Type: GrantFiled: August 23, 2011Date of Patent: January 7, 2014Assignee: Panasonic CorporationInventors: Tomohiro Okumura, Ichiro Nakayama, Hiroshi Kawaura, Tetsuya Yukimoto
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Publication number: 20120058649Abstract: In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.Type: ApplicationFiled: August 23, 2011Publication date: March 8, 2012Inventors: Tomohiro OKUMURA, Ichiro NAKAYAMA, Hiroshi KAWAURA, Tetsuya YUKIMOTO
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Publication number: 20040228982Abstract: The present invention provides a method for forming a uniform thickness vacuum CVD film on a surface of a substrate having a good step coverage and high quality. A process gas is supplied in a process chamber, which is closed by closing an exhaust port by closing a pressure control gate valve which is disposed between the process chamber and a vacuum pump. The process gas supply is stopped and a deposition on the substrate progresses for a certain period of time in the process chamber under pressure equilibrium closed condition. Thereafter or concurrently, in the same process chamber, an oxidizing gas or a nitrifying gas is supplied with plasma to oxidize or nitrify the formed film. By repetition of several cycles of these steps, a predetermined thickness film with high quality is obtained.Type: ApplicationFiled: October 24, 2003Publication date: November 18, 2004Inventor: Hiroshi Kawaura
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Patent number: 6030459Abstract: A semiconductor manufacturing system performs etching, ashing and CVD to form a thin film, using a gas plasma. An apparatus for treatment under a reduced pressure has two treatment chambers (23), a first load-lock chamber (21) connected to the treatment chambers, and second load-lock chambers (22) connected to the first load-lock chamber, the first and second load-lock chambers being set at the same pressure, wherein a disc (19) is disposed in the first load-lock chamber, the disc having a central shaft with four stage units (30) fixed thereto, the stage units permitting substrates to be rested thereon, and by a vertical movement and a rotative conveyance motion such as 180.degree. rotation of the disc there are formed the treatment chambers and the second load-lock chambers simultaneously with the conveyance of the substrates.Type: GrantFiled: April 28, 1998Date of Patent: February 29, 2000Assignee: C.V. Research CorporationInventor: Hiroshi Kawaura
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Patent number: 4597459Abstract: A weight detecting type sensor comprising a roller capable of partly jutting out upwardly from the surface of a body conveying belt, a strut rotatably supporting the roller and having a through-aperture at a portion thereof, a sensor having an optical axis associated with the through-aperture formed in the strut, and a pair of magnets disposed below the bottom of the strut.Type: GrantFiled: November 28, 1984Date of Patent: July 1, 1986Assignee: Canon Kabushiki KaishaInventors: Yoshiki Iwata, Nobuo Kawase, Yoshinori Tanaka, Takashi Miyake, Hiroshi Kawaura