Abstract: In a sound processing method of operating audio equipment to perform sound processing relating to audio content in accordance with one embodiment, a distributor terminal communicates with the audio equipment and at least one listener terminal, the distributor terminal distributes the audio content from the distributor terminal to the at least one listener terminal, the distributor terminal specifies an operation listener terminal, from among the at least one listener terminal, that is permitted to change a sound processing parameter of the audio equipment, the operation listener terminal accepts the sound processing parameter changed by the operation listener terminal, the operation listener terminal transmits the sound processing parameter changed by the operation listener terminal to the distributor terminal, and the audio equipment performs the sound processing based on the changed sound processing parameter changed by the operation listener terminal.

Abstract: The purpose of the present invention is to provide a method for causing sufficient deformation in precursor particles even when a soft high-purity metal is used for an outer layer material in mechanical milling, and manufacturing an MgB2 superconducting wire. A method for manufacturing an MgB2 superconducting wire in which an MgB2 filament is covered by an outer layer material, the method comprising: subjecting magnesium powder and boron powder to a shock that is insufficient for MgB2 to be clearly produced, and producing precursor particles in which boron particles are dispersed inside a magnesium matrix; filling a metal tub with the precursor particles; processing the metal tube filled with precursor particles to form a wire; and heat-treating the wire to synthesize the MgB2; wherein the method is characterized in that a portion of the wire-drawing step includes swaging.

Abstract: The present invention is intended to increase the critical current density of a wire rod having a shape with good symmetry such as a round wire or a square wire by making use of mechanical milling method. The production method of the present invention for the MgB2 superconducting wire rod comprises a mixing process of preparing a powder by adding a solid organic compound to a magnesium powder and a boron powder and then applying an impact to the powder to prepare a mixture of the powder in which boron particles are dispersed inside magnesium particles, a filling process of filling a metal tube with the mixture, an elongation process of elongating the metal tube filled with the mixture and a heat treatment process of heat-treating the metal tube to synthesize MgB2.

Abstract: In a sound processing method of operating audio equipment to perform sound processing relating to audio content in accordance with one embodiment, a distributor terminal communicates with the audio equipment and at least one listener terminal, the distributor terminal distributes the audio content from the distributor terminal to the at least one listener terminal, the distributor terminal specifies an operation listener terminal, from among the at least one listener terminal, that is permitted to change a sound processing parameter of the audio equipment, the operation listener terminal accepts the sound processing parameter changed by the operation listener terminal, the operation listener terminal transmits the sound processing parameter changed by the operation listener terminal to the distributor terminal, and the audio equipment performs the sound processing based on the changed sound processing parameter changed by the operation listener terminal.

Abstract: The purpose of the present invention is to provide a method for causing sufficient deformation in precursor particles even when a soft high-purity metal is used for an outer layer material in mechanical milling, and manufacturing an MgB2 superconducting wire. A method for manufacturing an MgB2 superconducting wire in which an MgB2 filament is covered by an outer layer material, the method comprising: subjecting magnesium powder and boron powder to a shock that is insufficient for MgB2 to be clearly produced, and producing precursor particles in which boron particles are dispersed inside a magnesium matrix; filling a metal tub with the precursor particles; processing the metal tube filled with precursor particles to form a wire; and heat-treating the wire to synthesize the MgB2; wherein the method is characterized in that a portion of the wire-drawing step includes swaging.

Abstract: Provided is an MgB2 superconductive thin film wire material allowing for lower costs while maintaining superconductive properties that are equal to or greater than those of the MgB2 superconductive thin film wire material of prior art, and to provide a production method for the superconductive thin film wire material. The MgB2 superconductive thin film wire material according to the present invention is a superconductive wire material comprising an MgB2 thin film formed over an elongated metal base material, characterized in that the MgB2 thin film exhibits a critical temperature of 30 K or higher, and has a microscopic organization wherein MgB2 columnar crystal grains stand densely packed on the surface of the elongated metal base material, and a layer of Mg oxide is formed in such a manner as to surround the MgB2 columnar crystal grains in the grain boundary regions of the MgB2 columnar crystal grains.

Abstract: The present invention is intended to increase the critical current density of a wire rod having a shape with good symmetry such as a round wire or a square wire by making use of mechanical milling method. The production method of the present invention for the MgB2 superconducting wire rod comprises a mixing process of preparing a powder by adding a solid organic compound to a magnesium powder and a boron powder and then applying an impact to the powder to prepare a mixture of the powder in which boron particles are dispersed inside magnesium particles, a filling process of filling a metal tube with the mixture, an elongation process of elongating the metal tube filled with the mixture and a heat treatment process of heat-treating the metal tube to synthesize MgB2.

Abstract: An operation reception device includes a display to display a current value, a physical operator to receive an operation in a one-way direction, and a controller configured to when the physical operator is not being operated by the user, set as a reference state an operating state corresponding to the current value, and in response to user operation of the physical operator, change the current value of the reference state.

Abstract: A power supply device including at least two power transmission coils is provided. The directions of the planes of at least two power transmission coils are different from each other. The frequencies of the at least two power transmission coils are different from each other. Preferably, the at least two power transmission coils include at least three power transmission coils. The directions of the planes of the at least three power transmission coils are different from each other.

Abstract: The present invention addresses the problem of providing a wire material capable of ensuring high critical current density, regardless of the cross-sectional shape thereof. This super-conducting wire material is equipped with an MgB2 filament, the number density of cavities having a major axis of 10 ?m or higher in a longitudinal cross-section of the superconducting wire material is in the range of 5-500 mm?2, and the average value of the angle formed between the major axis of the cavities and the axis of the wire material is 60 degrees or more.

Abstract: The light emitting device of the invention comprises a first electrode, a second electrode being light transmitting, and a carrier sandwiched between the first electrode and the second electrode and containing light emitters, wherein the first electrode has a plurality of projections or a pn junction formed with a p-type semiconductor and an n-type semiconductor each on a surface being in contact with the carrier.

Abstract: There is provided a semiconductor memory device capable of suppressing writing disturbances without increasing the cell array area. A semiconductor memory device has a memory cell array where a number of memory cells having a two-terminal type memory element and a transistor for selection connected in series are aligned in a matrix shape, a first voltage applying circuit for applying a writing voltage pulse to a first bit line, and a second voltage applying circuit for applying a pre-charge voltage to a first and second bit line, such that at the time of the writing of a memory cell, the first voltage applying circuit pre-charges the two ends of the memory cell to the same voltage in advance, and after that, the second voltage applying circuit applies a writing voltage pulse via the first bit line directly connected to the transistor for selection.

Abstract: There is provided a semiconductor memory device capable of suppressing writing disturbances without increasing the cell array area. A semiconductor memory device has a memory cell array where a number of memory cells having a two-terminal type memory element and a transistor for selection connected in series are aligned in a matrix shape, a first voltage applying circuit for applying a writing voltage pulse to a first bit line, and a second voltage applying circuit for applying a pre-charge voltage to a first and second bit line, such that at the time of the writing of a memory cell, the first voltage applying circuit pre-charges the two ends of the memory cell to the same voltage in advance, and after that, the second voltage applying circuit applies a writing voltage pulse via the first bit line directly connected to the transistor for selection.

Abstract: The light emitting device of the invention comprises a first electrode, a second electrode being light transmitting, and a carrier sandwiched between the first electrode and the second electrode and containing light emitters, wherein the first electrode has a plurality of projections or a pn junction formed with a p-type semiconductor and an n-type semiconductor each on a surface being in contact with the carrier.

Abstract: A lower thread supplying apparatus for a sewing machine has a bobbin accommodating portion 11 for detachably accommodating a lower thread bobbin 12 from an opening part 101c, a tension applying portion 13 for hitching a lower thread, a lower thread cutting knife 14 provided at the end portion of a lower thread passing route with a predetermined length, a cover 15 for covering the opening part 101c, a cover plate 20 for covering around the lower thread bobbin 12, a bending portion 16, a first guide portion 30 for introducing the lower thread to the bending portion and a second guide portion 40 for introducing the lower thread to the lower thread cutting knife. The bobbin accommodating portion, the tension applying portion, the bending portion and the lower thread cutting knife are provided at an inner area of the opening part 101c.

Abstract: A lower thread supplying apparatus for a sewing machine has a bobbin accommodating portion 11 for detachably accommodating a lower thread bobbin 12 from an opening part 101c, a tension applying portion 13 for hitching a lower thread, a lower thread cutting knife 14 provided at the end portion of a lower thread passing route with a predetermined length, a cover 15 for covering the opening part 101c, a cover plate 20 for covering around the lower thread bobbin 12, a bending portion 16, a first guide portion 30 for introducing the lower thread to the bending portion and a second guide portion 40 for introducing the lower thread to the lower thread cutting knife. The bobbin accommodating portion, the tension applying portion, the bending portion and the lower thread cutting knife are provided at an inner area of the opening part 101c.

Abstract: A method of forming semiconductor devices comprising the steps of forming, by restriction in the increased number of steps by a process close to the normal process, a field effect transistor having a local shallow source/drain diffusion layer on both the sides of a gate electrode for self-matching operation and without etching damages, wherein impurities are ion-implanted onto the semiconductor side wall and onto the substrate surface of both the sides, and thermal treatment operation is effected so as to form the local shallow source/drain diffusing layers by the diffusion for activating the impurities of the deep shallow source drain diffusing layers, thereby to render to be capable of restraining a short channel effect and reducing the parasitic resistance of the semiconductor devices.

Abstract: A semiconductor memory device having an improved storage capacitor is disclosed.

Abstract: For making an inter-level insulating film between a capacitor electrode and a gate electrode mild at the shoulder portion thereof, a doped polysilicon film is overlain by a silicon oxide film on a dielectric film structure, and the silicon oxide film is slightly etched through an isotropical technique by using a mask layer for forming a hollow space with a generally quarter-circle configuration beneath the mask layer, then anisotropically etching the silicon oxide and the doped polysilicon by using the same mask layer, then depositing silicon oxide on the entire surface, then exposing the surface of a semiconductor substrate by using an etch-back technique for leaving the inter-level insulating film on the capacitor electrode, then forming a gate electrode on the inter-level insulating film.

Abstract: A method for fabricating a semiconductor memory device which includes a single substrate, at least one memory cell including at least one MOS transistor formed on the single substrate, and a peripheral circuit having at least one MOS transistor formed on the single substrate, comprises the steps of forming on the single substrate a gate electrode for each of the MOS transistors of the memory cell and the peripheral circuit, iono-implanting impurities at a low dosage by using the gate electrodes as a mask so as to forming a low impurity concentration of source/drain regions of the MOS transistors of the memory cell and the peripheral circuit, depositing a mask layer to cover an area of the memory cell, and ion-implanting impurities at a high dosage by using the mask layer as a mask, so as to dope impurities to only the source/drain regions of the MOS transistor of the peripheral circuit, so that the MOS transistor of the memory cell has the source/drain regions of a low impurity concentration, and the MOS tran