Patents by Inventor Hiroshi Masusaki
Hiroshi Masusaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7033843Abstract: A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content.Type: GrantFiled: October 30, 2003Date of Patent: April 25, 2006Assignee: Taiyo Nippon Sanso CorporationInventors: Hiroyuki Hasegawa, Tomonori Yamaoka, Yoshio Ishihara, Hiroshi Masusaki
-
Patent number: 6887721Abstract: The present invention discloses a CVD apparatus which, together with being able to efficiently perform purging treatment after maintenance, uses for the purge gas a mixed gas of a gas having high thermal conductivity and an inert gas during heated flow purging treatment after maintenance to perform startup of the CVD apparatus while reducing the amount of time required for purging treatment. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times.Type: GrantFiled: December 19, 2001Date of Patent: May 3, 2005Assignees: Mitsubishi Materials Silicon Corporation, Taiyo Nippon Sanso CorporationInventors: Hiroyuki Hasegawa, Tomonori Yamaoka, Yoshio Ishihara, Hiroshi Masusaki, Takayuki Satou, Katsumasa Suzuki, Hiroki Tokunaga
-
Patent number: 6800855Abstract: The present invention provides a spectroscopic method for analyzing isotopes which makes it possible to simplify a system for measurement and to identify isotopes with high accuracy and sensitivity and to carry out quantitative analysis. The spectroscopic method for analyzing isotopes uses a semiconductor laser beam having as a wavelength zone a 2000 nm-wavelength band as a beam source of wavelengths of the absorption spectra of the isotopes. A reference gas is used for identification of the isotopes where the gas contains collating components having two wavelengths (W1, W2) of well-known absorption spectra in wavelength bands close to the wavelengths (w1, w2) of the absorption spectra of the isotopes.Type: GrantFiled: December 27, 1999Date of Patent: October 5, 2004Assignee: Nippon Sanso CorporationInventors: Jie Dong, Katsumasa Suzuki, Hiroshi Masusaki, Koh Matsumoto
-
Patent number: 6794204Abstract: A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content.Type: GrantFiled: September 26, 2002Date of Patent: September 21, 2004Assignees: Mitsubishi Materials Silicon Corporation, Nippon Sanso CorporationInventors: Hiroyuki Hasegawa, Tomonori Yamaoka, Yoshio Ishihara, Hiroshi Masusaki
-
Patent number: 6776805Abstract: A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content.Type: GrantFiled: February 27, 2001Date of Patent: August 17, 2004Assignees: Mitsubishi Materials Silicon Corporation, Nippon Sanso CorporationInventors: Hiroyuki Hasegawa, Tomonori Yamaoka, Yoshio Ishihara, Hiroshi Masusaki
-
Publication number: 20040092043Abstract: Disclosed is a semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing. Further disclosed are the semiconductor manufacturing method and a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content.Type: ApplicationFiled: October 30, 2003Publication date: May 13, 2004Applicants: Mitsubishi Materials Silicon Corporation, NIPPON SANSO CORPORATIONInventors: Hiroyuki Hasegawa, Tomonori Yamaoka, Yoshio Ishihara, Hiroshi Masusaki
-
Patent number: 6636316Abstract: The present invention provides a spectroscopic method for analysing objects in a gas comprising a main ingredient and the objects, both of which the absorption spectra exist in the same wavelength range, with high precision and sensitivity by using a compact and simple single cell system.Type: GrantFiled: December 27, 1999Date of Patent: October 21, 2003Assignee: Nippon Sanso CorporationInventors: Koh Matsumoto, Jie Dong, Hiroshi Masusaki, Katsumasa Suzuki
-
Publication number: 20030022469Abstract: Disclosed is a semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing. Further disclosed are the semiconductor manufacturing method and a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content.Type: ApplicationFiled: September 26, 2002Publication date: January 30, 2003Inventors: Hiroyuki Hasegawa, Tomonori Yamaoka, Yoshio Ishihara, Hiroshi Masusaki
-
Patent number: 6491758Abstract: A CVD apparatus is able to efficiently perform purging treatment after maintenance by using for the purge gas a mixed gas of a high thermal conductivity and an inert gas. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times, the moisture concentration in reaction chamber is measured with a moisture meter connected to the reaction chamber when performing a corrosive gas treatment, and maintenance times are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly.Type: GrantFiled: August 30, 2000Date of Patent: December 10, 2002Assignees: Mitsubishi Materials Silicon Corporation, Nippon Sanso CorporationInventors: Hiroyuki Hasegawa, Tomonori Yamaoka, Hiroshi Masusaki, Takayuki Satou, Katsumasa Suzuki, Hiroki Tokunaga
-
Patent number: 6483589Abstract: In order to provide a laser spectroscopy system of simple construction and free of the effect of the fringe noise and to provide a laser spectroscopy system in which a reference cell is efficiently installed with minimum cost and space, there is disclosed a laser spectroscopy system comprising: a tunable laser diode source for generating a laser beam used for spectroscopic analysis; a sample cell where a sample gas is introduced; a first photo detector for measuring an intensity of a laser beam transmitted through the sample cell and having a beam receiving face; a beam splitter for splitting a portion of the laser beam from the laser source; and a second photo detector for measuring an intensity of a splitted laser beam from the beam splitter and having a beam receiving face, wherein the at least one of beam receiving faces is tilted to be at a predetermined angle from an axis of laser beam.Type: GrantFiled: July 6, 2000Date of Patent: November 19, 2002Assignee: Nippon Sanso CorporationInventors: Katsumasa Suzuki, Hiroshi Masusaki, Takayuki Satoh
-
Publication number: 20020061605Abstract: The present invention discloses a CVD apparatus which, together with being able to efficiently perform purging treatment after maintenance, uses for the purge gas a mixed gas of a gas having high thermal conductivity and an inert gas during heated flow purging treatment after maintenance to perform startup of the CVD apparatus while reducing the amount of time required for purging treatment. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times.Type: ApplicationFiled: December 19, 2001Publication date: May 23, 2002Applicant: Mitsubishi Materials Silicon Corporation and Nippon Sanso CorporationInventors: Hiroyuki Hasegawa, Tomonori Yamaoka, Yoshio Ishihara, Hiroshi Masusaki, Takayuki Satou, Katsumasa Suzuki, Hiroki Tokunaga
-
Publication number: 20010019900Abstract: Disclosed is a semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing. Further disclosed are the semiconductor manufacturing method and a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content.Type: ApplicationFiled: February 27, 2001Publication date: September 6, 2001Inventors: Hiroyuki Hasegawa, Tomonori Yamaoka, Yoshio Ishihara, Hiroshi Masusaki
-
Patent number: 5821537Abstract: A device and method for measuring an impurity in a trace concentration in a gas to be measured by infrared spectroscopic analysis employing a diode laser are provided. In order to carry out analysis with high sensitivity and high accuracy, the gas to be measured is directed into sample cell 5 and placed in a low pressure state by a pump 16. Infrared light from the wavelength region in which strong absorption peaks from the impurity can be obtained are oscillated from the diode laser 1, and a derivative absorption spectrum is measured by passing the infrared rays through sample cell 5 and reference cell 8 which is filled with the impurity alone. The spectrum for the gas to be measured and the spectrum for the impurity alone are compared, and the impurity is identified by confirming a plurality of absorption peaks originating from the impurity. Determination of the impurity is then carried out from absorption intensity of the strongest peak.Type: GrantFiled: July 2, 1997Date of Patent: October 13, 1998Assignee: Nippon Sanso CorporationInventors: Yoshio Ishihara, Hiroshi Masusaki, Shang-Qian Wu, Koh Matsumoto
-
Patent number: 5703365Abstract: The present invention relates to a device and method for measuring an impurity in a trace concentration in a gas to be measured by means of infrared spectroscopic analysis employing a diode laser. In order to carry out analysis with high sensitivity and high accuracy, the gas to be measured is directed into sample cell 5 and placed in a low pressure state by means of pump 16. Infrared light from the wavelength region in which strong absorption peaks from the impurity can be obtained are oscillated from the diode laser 1, and a derivative absorption spectrum is measured by passing the infrared rays through sample cell 5 and reference cell 8 which is filled with the impurity alone. The spectrum for the gas to be measured and the spectrum for the impurity alone are compared, and the impurity is identified by confirming a plurality of absorption peaks originating from the impurity. Determination of the impurity is then carried out from absorption intensity of the strongest peak.Type: GrantFiled: November 20, 1995Date of Patent: December 30, 1997Assignee: Nippon Sanso CorporationInventors: Yoshio Ishihara, Hiroshi Masusaki, Shang-Qian Wu, Koh Matsumoto