Abstract: A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film.

Abstract: In the information recording an reproducing method and apparatus according to the present invention, a piece of picture image information is recorded as an analog quantity or a digital quantity an information carrying medium in a planar manner at a high density, charge potential is read for outputting electric signals to correspond to the recorded picture image information and then the outputted signals are printed out by means of various display unit or output device, with high quality and high resolution as well as ease processing of the information. The information carrying medium provides a long period of storage of information and enables stored picture image information to be repeatedly reproduced with a picture quality according to need.

Abstract: A phase shift mask, e.g. a halftone phase shift mask, which need not to form an ultra-fine pattern and is capable of suppressing during exposure the occurrence of a sub-peak of light intensity, which has an adverse effect on the image formation, and which has a light-blocking pattern with a reduced transmittance at a region outside a device pattern area which corresponds to a region subjected to multiple exposure during transfer effected by using the mask. The halftone phase shift mask has on a transparent substrate (101) a halftone phase shift film (102) comprising a single layer or a plurality of layers. The composition of the halftone phase shift film (102) is changed in a region (107) outside a device pattern area on the transparent substrate (101) which corresponds to a multiple-exposure region by a method wherein the region (107) is irradiated with an electromagnetic wave, a particle beam, heat rays, etc.

Abstract: A halftone phase shift photomask having a sufficiently high transmittance for light of short wavelength and usable for high-resolution lithography effected by exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light. The halftone phase shift photomask has on a transparent substrate a halftone phase shift layer which includes at least one layer composed mainly of a chromium compound. The chromium compound contains at least fluorine atoms in addition to chromium atoms. A transmittance higher than a predetermined level can be obtained even in exposure carried out a relatively short wavelength. The photomask can be used for exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light (wavelength: 248 nm). Thus, high-resolution lithography can be realized. Since the photomask can be formed by approximately the same method as in the case of the conventional photomasks, it is possible to improve the yield and reduce the cost.

Abstract: A phase shift mask, e.g. a halftone phase shift mask, which need not to form an ultra-fine pattern and is capable of suppressing during exposure the occurrence of a sub-peak of light intensity, which has an adverse effect on the image formation, and which has a light-blocking pattern with a reduced transmittance at a region outside a device pattern area which corresponds to a region subjected to multiple exposure during transfer effected by using the mask. The halftone phase shift mask has on a transparent substrate (101) a halftone phase shift film (102) comprising a single layer or a plurality of layers. The composition of the halftone phase shift film (102) is changed in a region (107) outside a device pattern area on the transparent substrate (101) which corresponds to a multiple-exposure region by a method wherein the region (107) is irradiated with an electromagnetic wave, a particle beam, heat rays, etc.

Abstract: A halftone phase shift photomask having a sufficiently high transmittance for light of short wavelength and usable for high-resolution lithography effected by exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light. The halftone phase shift photomask has on a transparent substrate a halftone phase shift layer which includes at least one layer composed mainly of a chromium compound. The chromium compound contains at least fluorine atoms in addition to chromium atoms. A transmittance higher than a predetermined level can be obtained even in exposure carried out at a relatively short wavelength. The photomask can be used for exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light (wavelength: 248 nm). Thus, high-resolution lithography can be realized. Since the photomask can be formed by approximately the same method as in the case of the conventional photomasks, it is possible to improve the yield and reduce the cost.

Abstract: The invention relates a halftone phase shift photomask and a blank therefor, which enables the transmittance of a phase shift portion to be varied even after blank or photomask fabrication, can accommodate to a variety of patterns, and can be fabricated on a mass scale. The exposure light transmittance of a halftone phase shift layer is arbitrarily variable within the range of 1% to 50%, inclusive, by exposing the blank or photomask to a high temperature elevated to at least 150.degree. C., to an oxidizing atmosphere, or to a reducing atmosphere at a step that can provided independent of the steps for film-forming or photomask fabrication step. This enables the exposure light transmittance of the halftone phase shift layer to be changed to any desired value after blank or photomask fabrication, and so an optimal halftone phase shift photomask to be obtained depending on the size, area, location, shape, and the like of the transferred pattern.

Abstract: The invention relates to improved bitumen compositions including:(A) 100 parts of bitumen(B) 0.1 to 10 parts of a copolymer of an alpha-olefin, of an unsaturated epoxide and of an ester of unsaturated carboxylic acid(C) 0.1 to 10 parts of a copolymer of an alpha-olefin and of an ester of unsaturated carboxylic acid,(D) 0 to 10 parts of a thermoplastic elastomer(E) 0 to 10 parts of a polymer which is reactive with (B)(F) 0 to 10 parts of an ethylene/vinyl acetate copolymer.These bitumens are stable when stored and resist rutting.

Abstract: In the information recording an reproducing method and apparatus according to the present invention, picture image information is recorded as an analog quantity or a digital quantity on an information carrying medium in a planar manner at a high density, charge potential is read for outputting electric signals to correspond to the recorded picture image information and then the outputted signals are printed out by means of various display unit or output device, with high quality and high resolution as well as ease processing of the information. The information carrying medium provides a long period of storage of information and enables stored picture image information to be repeatedly reproduced with a picture quality according to need.

Abstract: The invention relates a halftone phase shift photomask and a blank therefor, which enables the transmittance of a phase shift portion to be varied even after blank or photomask fabrication, can accommodate to a variety of patterns, and can be fabricated on a mass scale. The exposure light transmittance of a halftone phase shift layer is arbitrarily variable within the range of 1% to 50%, inclusive, by exposing the blank or photomask to a high temperature elevated to at least 150.degree. C., to an oxidizing atmosphere, or to a reducing atmosphere at a step that can provided independent of the steps for film-forming or photomask fabrication step. This enables the exposure light transmittance of the halftone phase shift layer to be changed to any desired value after blank or photomask fabrication, and so an optimal halftone phase shift photomask to be obtained depending on the size, area, location, shape, and the like of the transferred pattern.

Abstract: An overlying shifter type phase shift photomask used to produce semiconductor integrated circuits of high integration density, e.g. VLSI, ULSI, etc., which is capable of transferring fine-line patterns to a wafer by projection exposure. The photomask is produced by forming at least a light-blocking layer pattern or a combination of a light-blocking layer pattern and an etching stopper layer for a shifter layer on a transparent substrate, forming a shifter layer over the whole surface of the substrate, and then patterning the shifter layer to form a shifter layer pattern. The production method includes the step of polishing away unevenness on the surface of the shifter layer caused by a step which is produced by the light-blocking layer pattern, thereby leveling the surface of the shifter layer.

Abstract: The invention provides a phase shift photomask which includes an etching stopper layer transparent to ultraviolet illumination light and well resistant to etching as well as chemicals, acids, etc., and enables a phase shift angle to be controlled with high accuracy. In a phase shift photomask including a transparent substrate 210, and an etching stopper layer 202 and at least a phase shifter pattern 204 stacked on the substrate in this order, the etching stopper layer 202 is composed predominantly of hafnium oxide.

Abstract: A halftone phase shift photomask designed so that it is possible to shorten the photoengraving process, use a production line for a conventional photomask, prevent lowering of the contract between the transparent and semitransparent regions at a long wavelength in the visible region, which is used for inspection and measurement, and also prevent charge-up during electron beam exposure, and that ordinary physical cleaning process can be used for the halftone phase shift photomask. The halftone phase shift photomask has on a transparent substrate (1) a region which is semitransparent to exposure light and a region which is transparent to the exposure light so that the phase difference between light passing through the transparent region and light passing through the semitransparent region is substantially .pi. radians. A semitransparent film that constitutes the semitransparent region is arranged in the form of a multilayer film including layers (3, 4) of chromium or a chromium compound.

Abstract: A phase shift photomask and a photomask blank used to produce the same. A dry etching stopper layer, which is disposed between a substrate and a light-shielding layer or between the substrate and a phase shifter layer, is made of either a film mainly composed of tin oxide nitride, which has high etching selectivity and high permeability, or an alumina film formed by sputtering, followed by heat treatment carried out in an oxidizing atmosphere, thereby enabling the required overetching to be satisfactorily performed during etching of the phase shifter layer, and thus making it possible to effect precise phase control. In addition, it is possible to eliminate the occurrence of an in-plane transmittance distribution.

Abstract: The invention is directed to a phase shift photomask for which a film made of a material capable of providing an etching stopper layer that excels in etching selectivity and can interrupt etching surely and automatically, and provides a phase shift photomask at least comprising a substrate 30 and a phase shifter pattern made of a material composed mainly of silicon oxide that is provided on the surface of the substrate directly or with an opaque layer 37 interposed therebetween, said phase shift photomask being characterized in that the surface 30 is provided on the surface with an etching stopper layer 30 that comprises a mixture of Al.sub.2 O.sub.3 with MgO, ZrO.sub.2, Ta.sub.2 O.sub.5 or HfO, or CrO.sub.x, CrN.sub.y, CrC.sub.z, CrO.sub.x N.sub.y, CrO.sub.x C.sub.z or CrO.sub.x N.sub.y C.sub.z, or MgF.sub.2-2x O.sub.y, CaF.sub.2-2x O.sub.y, LiF.sub.2-2x O.sub.y, BaF.sub.2-2x O.sub.y, La.sub.2 F.sub.6-2x O.sub.y or Ce.sub.2 F.sub.6-2x O.sub.

Abstract: In the information recording an reproducing method and apparatus according to the present invention, a piece of picture image information is recorded as an analog quantity or a digital quantity an information carrying medium in a planar manner at a high density, charge potential is read for outputting electric signals to correspond to the recorded picture image information and then the outputted signals are printed out by means of various display unit or output device, with high quality and high resolution as well as ease processing of the information. The information carrying medium provides a long period of storage of information and enables stored picture image information to be repeatedly reproduced with a picture quality according to need.

Abstract: A process for producing an impact resistant graft polymer which comprises first polymerizing a portion of monomer mixture (b) consisting of specified unsaturated acid, alkyl acrylate having C.sub.1 -C.sub.12 alkyl and other copolymerizable monomer (said portion of monomer mixture (b) does not contain said unsaturated acid), followed by consecutively polymerizing the residual portion of monomer mixture (b) (said residual portion of monomer mixture (b) contains said unsaturated acid) to obtain an acid residue-containing copolymer (B) latex, adding 0.

Abstract: A multi-stage sequentially produced polymer structure composition, comprising: an innermost layer (A), and successively seed polymerized thereupon an elastic polymer layer (B), an outermost layer (C) and at least one intermediate layer (D), said layer (A) which has a glass transition temperature (Tg) of at least 10.degree. C. and which constitutes 5-35% by weight of the total polymer composition being the polymerized product of a monomer mixture comprising 51-100 parts by weight of styrene or a styrene derivative, 0-49 parts by weight of a monomer having a copolymerizable double bond, 0-10 parts by weight of a polyfunctional monomer, and 0-5 parts by weight of a graft crosslinking agent; said layer (B) which has a glass transition temperature of 0.degree. C.