Abstract: A substrate processing system includes a vacuum transfer module, a substrate processing module, an atmospheric transfer module, a load-lock module, at least one substrate transfer robot disposed in the vacuum transfer module and the atmospheric transfer module, and having at least one end effector, and a controller configured to control a particle removal operation. The particle removal operation includes transferring said at least one end effector in any one of the vacuum transfer module, the substrate processing module, the load-lock module, and the atmospheric transfer module in a state where at least one charging member that is charged is placed on said at least one end effector.

Abstract: A staining method includes staining a biological sample with a coumarin fluorescent dye to provide a fluorescent-stained sample, and bringing the fluorescent-stained sample into contact with osmium tetroxide, further embedding the sample in an epoxy resin, and subsequently slicing the sample to provide a section sample including the fluorescent-stained sample.

Abstract: A substrate accommodating container that accommodates a substrate includes a monitor installed inside the substrate accommodating container so as to detect a contamination state inside the substrate accommodating container, wherein the contamination state inside the substrate accommodating container is detected.

Abstract: The present invention relates to a compound represented by general formula (I) (in the formula (I), X represents a methyl group or a halogen atom; R1 to R14 each independently represent a hydrogen atom, a halogen atom, a cyano group, an optionally substituted alkyl group having 1 to 8 carbon atoms, or an optionally substituted aromatic hydrocarbon group having 6 to 12 carbon atoms; Bm? represents a polyoxometalate anion; m represents an integer of 1 to 20; n represents an integer of 1 to 20, provided that n is determined such that the charge of the whole formula (I) becomes zero).

Abstract: A processing apparatus performs a predetermined process on an object to be processed by supplying halogen-based gas into a chamber in which a vacuum is maintained, to which chamber a member having an oxide film formed on a surface thereof is connected, or which chamber has an oxide film formed on a surface thereof, wherein the predetermined processing is performed on the target object once or a plurality of times in the chamber. Later, oxygen gas or dry air is supplied to the chamber to purge the chamber, and then the chamber is opened and exposed to the atmosphere.

Abstract: A film forming method of forming a predetermined film on a substrate by PEALD includes: adsorbing a precursor on the substrate; and forming plasma from a modifying gas and modifying the precursor adsorbed on the substrate with radicals contained in the plasma. Here, the modifying of the precursor includes supplying a radio frequency power having an effective power smaller than 500 W to a plasma source configured to form the plasma from the modifying gas.

Abstract: A film forming apparatus configured to form a predetermined film on a substrate by PEALD includes a processing container configured to airtightly accommodate the substrate; and a placing table on which the substrate is placed within the processing container. The processing container includes an exhaust opening through which an inside of the processing container is exhausted; an exhaust path configured to connect the exhaust opening and a processing space above the placing table within the processing container; and a partition wall configured to separate a processing space side from an exhaust opening side in the exhaust path. The partition wall includes a flow path configured to connect the processing space side and the exhaust opening side, and the partition wall is formed such that the exhaust opening side is not seen from the processing space side when an extension direction of the exhaust path is viewed from a top.

Abstract: An annular member includes an annular member body to be disposed around a substrate in a substrate processing apparatus. A heterogeneous material portion is disposed in the annular member body and formed of a heterogeneous material different from a material of the annular member body.

Abstract: A method of processing a metal member having a passivation film on its surface is provided. The method includes a step of heating the metal member for a predetermined period at a temperature of 300° C. or higher.

Abstract: A particle generation preventing method for preventing particle generation in a vacuum apparatus including an alumite-treated component is provided. The particle generation preventing method includes an evacuation step of evacuating the vacuum apparatus to reduce a pressure within the vacuum apparatus to less than or equal to 1.3×10?1 Pa (1 mTorr), a pressure increasing step of increasing the pressure within the vacuum apparatus to atmospheric pressure after the evacuation step, and a moisture adhesion step of causing moisture to be adhered to the alumite-treated component after the pressure increasing step.

Abstract: There is provided a maintenance control method of controlling a processing device including determining whether a temperature of a component part of the processing device that processes a substrate changes at least 5° C. or a preset temperature is changed by at least 5° C., determining whether at least a predetermined number of a first vibration is included in vibration data detected by a vibration sensor provided in the processing device in response to a timing when the temperature of the component part of the processing device that processes the substrate is determined to change at least 5° C. or the preset temperature is determined to be changed by at least 5° C.

Abstract: A method of processing a metal member having a passivation film on its surface is provided. The method includes a step of heating the metal member for a predetermined period at a temperature of 300° C. or higher.

Abstract: A particle generation preventing method for preventing particle generation in a vacuum apparatus including an alumite-treated component is provided. The particle generation preventing method includes an evacuation step of evacuating the vacuum apparatus to reduce a pressure within the vacuum apparatus to less than or equal to 1.3×10?1 Pa (1 mTorr), a pressure increasing step of increasing the pressure within the vacuum apparatus to atmospheric pressure after the evacuation step, and a moisture adhesion step of causing moisture to be adhered to the alumite-treated component after the pressure increasing step.

Abstract: A substrate accommodating container that accommodates a substrate includes a monitor installed inside the substrate accommodating container so as to detect a contamination state inside the substrate accommodating container, wherein the contamination state inside the substrate accommodating container is detected.

Abstract: A processing apparatus performs a predetermined process on an object to be processed by supplying halogen-based gas into a chamber in which a vacuum is maintained, to which chamber a member having an oxide film formed on a surface thereof is connected, or which chamber has an oxide film formed on a surface thereof, wherein the predetermined processing is performed on the target object once or a plurality of times in the chamber. Later, oxygen gas or dry air is supplied to the chamber to purge the chamber, and then the chamber is opened and exposed to the atmosphere.

Abstract: A plasma processing apparatus includes a processing chamber, in which a wafer W is plasma-processed, and a CPU controlling an operation of each component. A processing gas is introduced into the processing chamber under a first condition defined by a flow rate and a molecular weight of the processing gas, specifically based on a magnitude of a product A1 (=Q1×m1) of the flow rate Q1 and the molecular weight m1 of the processing gas, and a surface of the wafer W is physically or chemically etched. And then, a pre-purge gas which may be identical to or different from the processing gas is introduced into the processing chamber through a shower head under a second condition derived from the first condition.

Abstract: A substrate transfer apparatus includes a transfer chamber in which a substrate is transferred, and a process chamber configured to process a substrate therein. A contamination monitor is provided in the transfer chamber and configured to detect a contamination condition of the transfer chamber.

Abstract: An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.

Abstract: A cleaning substrate that can prevent a decrease in the operating rate of a substrate processing apparatus. The cleaning substrate that cleans the interior of a chamber in the substrate processing apparatus has a removal mechanism that removes foreign matter in the chamber.

Abstract: In order to prevent particles within a unit from sticking to a substrate in a substrate processing process, an ion generator charges the particles. At the same time, a direct current voltage of the same polarity as the charged polarity of the particles is applied from a direct current power source to the substrate. In order to prevent generation of particles when producing gas plasma, a high-frequency voltage is applied to the upper and lower electrodes at multiple stages to produce plasma. In other words, at a first step, a minimum high-frequency voltage at which plasma can be ignited is applied to the upper and lower electrodes, thereby producing a minimum plasma. Thereafter, the applied voltage is increased in stages to produce predetermined plasma.