Abstract: A semiconductor device includes first, second, and third semiconductor layers each having multiple diffusion layers. The first direction widths of the first diffusion layers are the same. The amount of impurity within the first diffusion layers gradually increases from the bottom end towards the top end of the first semiconductor layer. The first direction widths of the second diffusion layers are the same. The amounts of impurity within the second diffusion layers are the same. The first direction widths of the third diffusion layers are narrower than the first direction widths of the first diffusion layers and the first direction widths of the second diffusion layers at the same level, and gradually become narrower from the bottom end towards the top end of the third semiconductor layer. The amount of impurity within the third diffusion layers are the same.

Abstract: In general, according to one embodiment, a power semiconductor device includes a first pillar region, a second pillar region, and an epitaxial layer of a first conductivity type on a first semiconductor layer. The first pillar region is composed of a plurality of first pillar layers of a second conductivity type and a plurality of second pillar layers of the first conductivity type alternately arranged along a first direction. The second pillar region is adjacent to the first pillar region along the first direction and includes a third pillar layer of the second conductivity type, a fourth pillar layer of the first conductivity type, and a fifth pillar layer of the second conductivity type in this order along the first direction. A plurality of second base layers of the second conductivity type electrically connected, respectively, onto the third pillar layer and the fifth pillar layer and spaced from each other.

Abstract: An engine unit includes an engine, an exhaust gas treatment device and a connecting pipe. The engine has an exhaust gas port. The exhaust gas treatment device is arranged above the engine. The connecting pipe connects the exhaust gas port and the exhaust gas treatment device. The connecting pipe has an expandable-contractible bellows portion. The bellows portion has a linear form following the upward-downward direction. The lower end portion of the bellows portion is positioned lower than at least a part of the exhaust gas port.

Abstract: An exhaust gas treatment unit includes an exhaust gas treatment device, a bracket and a connecting pipe. The exhaust gas treatment device is mounted on a bracket. The connecting pipe is connected to the exhaust gas treatment device. The connecting pipe directs exhaust gas to the exhaust gas treatment device. The connecting pipe may include a supporting portion and a pipe portion, with the supporting portion supporting the bracket and the pipe portion being integrated with the supporting portion. Alternatively, the exhaust gas treatment unit may further include a supporting member having a supporting portion supporting the bracket and a pipe portion integrated with the supporting portion, with the pipe portion connected to the connecting pipe.

Abstract: A semiconductor device includes a superjunction structure. The influence of external charge on device performance is suppressed using a shield electrode, field plate electrodes, and cover electrodes in various configurations. Optional embodiments include placing an interconnection film between certain electrodes and the upper surface of the superjunction structure. Cover electrodes may also be connected to various potentials to limit the effects of external charge on device performance.

Abstract: Disclosed is a cell including: a closed-end tubular case for accommodating a power generation element; a lid for the case; a terminal electrode disposed outside of the case and used for connection with another cell; an extraction electrode passing through the lid and used to extract power of the power generation element to the outside of the case; and a stepped connection electrode disposed outside of the case, the stepped connection electrode having a first flat portion to which the terminal electrode is connected and a second flat portion which is located at a level different from the level of the first flat portion and to which the extraction electrode is connected. The first and second flat portions have regions overlapping each other as viewed in a direction orthogonal to the thickness of the first and second flat portions.

Abstract: A compound represented by formula (IA) or a pharmaceutically acceptable salt thereof, which acts relying on an orexin (OX) receptor antagonistic activity and is useful for the treatment or prevention of diseases such as sleep disorder, depression, anxiety disorder, panic disorder, schizophrenia, drug dependence, Alzheimer's disease, Parkinson's disease, Huntington's chorea, eating disorder, head ache, migraine, pain, gastrointestinal diseases, epilepsy, inflammations, immune-related diseases, endocrine-related diseases and hypertension.

Abstract: The present invention relates to novel compounds of formula [I] or pharmaceutically acceptable salts thereof: The compounds of the present invention are useful in the prevention or treatment of diseases such as schizophrenia, Alzheimer's disease, cognitive impairment, dementia, anxiety disorders (e.g., generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, post-traumatic stress disorder, specific phobias, acute stress disorder), depression, drug dependence, spasm, tremor, pain, Parkinson's disease, attention deficit hyperactivity disorder, bipolar disorder, eating disorder, or sleep disorders, which is based on the glycine uptake-inhibiting action.

Abstract: A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The device includes a first trench and a first insulation film. The first trench is provided between end portions of the pillar layers, in the semiconductor substrate at the termination portion exposed from a source electrode of the MOSFET elements. The first insulation film is provided on a side surface and a bottom surface of the first trench.

Abstract: A semiconductor device includes a superjunction structure. The influence of external charge on device performance is suppressed using a shield electrode, field plate electrodes, and cover electrodes in various configurations. Optional embodiments include placing an interconnection film between certain electrodes and the upper surface of the superjunction structure. Cover electrodes may also be connected to various potentials to limit the effects of external charge on device performance.

Abstract: In a cell holding device, engaging members (224) are disposed in an insertion cavity (222) into which an end portion of each cell (400) is inserted, such that the engaging members (224) are movable in a direction of insertion in which the cell (400) is inserted. The cell holding device also has guides (225) that push the engaging members (224) toward the inner radius of the insertion cavity (222) as the engaging members (224) move in the direction of insertion. With this arrangement, when the end portion of the cell (400) is inserted into the insertion cavity (222), the engaging members (224) sandwiched between the guides (225) and a side circumferential surface (403) of the cell (400) hold the end portion of the cell (400).

Abstract: A screw compressor includes a low pressure stage compressor body; a high pressure stage compressor body that further compresses a compressed air compressed by the low pressure stage compressor body; pinion gears for example, respectively, provided on, for example, a male rotor of the low pressure stage compressor body and, for example, a male rotor of the high pressure stage compressor body; a motor; a bull gear for example, provided on a rotating shaft of the motor; and an intermediate shaft supported rotatably and provided with a pinion gear, which meshes with the bull gear, and a bull gear, which meshes with the pinion gears. Thereby, it is possible to make the motor relatively low in rotating speed while inhibiting the gears from being increased in diameter, thus enabling achieving reduction in cost.

Abstract: The present invention aims to provide novel compounds of formula [I] or pharmaceutically acceptable salts thereof that are based on a glycine uptake inhibiting action and which are useful in the prevention or treatment of such diseases as schizophrenia, Alzheimer's disease, cognitive dysfunction, dementia, anxiety disorders (generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, posttraumatic stress disorder, specific phobia, acute stress disorder, etc.

Abstract: A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The device includes a first trench and a first insulation film. The first trench is provided between end portions of the pillar layers, in the semiconductor substrate at the termination portion exposed from a source electrode of the MOSFET elements. The first insulation film is provided on a side surface and a bottom surface of the first trench.

Abstract: A power semiconductor device includes a first semiconductor layer of a first conductivity type, a first drift layer, and a second drift layer. The first drift layer includes a first epitaxial layer of the first conductivity type, a plurality of first first-conductivity-type pillar layers, and a plurality of first second-conductivity-type pillar layers. The second drift layer is formed on the first drift layer and includes a second epitaxial layer of the first conductivity type, a plurality of second second-conductivity-type pillar layers, a plurality of second first-conductivity-type pillar layers, a plurality of third second-conductivity-type pillar layers, and a plurality of third first-conductivity-type pillar layers. The plurality of second second-conductivity-type pillar layers are connected to the first second-conductivity-type pillar layers. The plurality of second first-conductivity-type pillar layers are connected to the first first-conductivity-type pillar layers.

Abstract: A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer provided thereon, mutually separated columnar third semiconductor layers of a second conductivity type extending within the second semiconductor layer, island-like fourth semiconductor layers of the second conductivity type provided on the third semiconductor layers, fifth semiconductor layers of the first conductivity type, sixth semiconductor layers of the second conductivity type, a gate electrode, a first electrode, and a second electrode. The fifth semiconductor layers are selectively provided on the fourth semiconductor layers. The sixth semiconductor layer electrically connects two adjacent fourth semiconductor layers. The first electrode is in electrical connection with the first semiconductor. The second electrode is in electrical connection with the fourth semiconductor layers and the fifth semiconductor layers via the openings in the gate electrode.

Abstract: The compound represented by formula (IA) or a pharmaceutically acceptable salt thereof is based on orexin (OX) receptor antagonist activity, is useful in the treatment and prevention of illnesses including sleep disorder, depression, anxiety disorder, panic disorder, schizophrenia, drug dependency, Alzheimer's disease, Parkinson's disease, Huntington's chorea, eating disorders, pain, gastrointestinal disease, epilepsy, inflammation, immunological disease, endocrinological related disease, and hypertension.

Abstract: A semiconductor device includes an element region and an end region, the element region having a semiconductor element formed therein, and the end region surrounding the element region. The semiconductor device includes a semiconductor substrate, a trench, an insulating layer, and a field plate conductive layer. The trench is formed in the semiconductor substrate so as to surround the element region in the end region. The field plate conductive layer is formed in the trench via the insulating layer.

Abstract: A power semiconductor device includes a first semiconductor layer of a first conductivity type, a first drift layer, and a second drift layer. The first drift layer includes a first epitaxial layer of the first conductivity type, a plurality of first first-conductivity-type pillar layers, and a plurality of first second-conductivity-type pillar layers. The second drift layer is formed on the first drift layer and includes a second epitaxial layer of the first conductivity type, a plurality of second second-conductivity-type pillar layers, a plurality of second first-conductivity-type pillar layers, a plurality of third second-conductivity-type pillar layers, and a plurality of third first-conductivity-type pillar layers. The plurality of second second-conductivity-type pillar layers are connected to the first second-conductivity-type pillar layers. The plurality of second first-conductivity-type pillar layers are connected to the first first-conductivity-type pillar layers.

Abstract: Provided is a novel compound represented by formula [I] or a pharmaceutically acceptable salt thereof having antagonistic activity against group II metabolism-type glutamic acid (m-Glu) receptors. The compound or pharmaceutically acceptable salt thereof is useful as a prophylactic or therapeutic agent for diseases such as new mood disorders (depressive and bipolar disorders), anxiety disorders (generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, post-traumatic stress disorder, specific phobias, and acute stress disorder), schizophrenia, Alzheimer's disease, cognitive dysfunction, dementia, drug dependence, convulsions, tremors, pain, sleep disorders, and the like.