Patents by Inventor Hiroshi Ohtsubo
Hiroshi Ohtsubo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8621757Abstract: In a cutting edge of a razor blade, a non-nitrided layer containing Ti, Al, and Cr formed on opposite surfaces of a base plate as a portion of a coating layer. A remaining layer containing Ti, Al, Cr, and N formed on opposite surfaces of the non-nitrided layer as a portion of a nitrided layer of the coating layer. A surface layer containing Ti, Al, Cr, and N formed on opposite surfaces of the remaining layer as a portion of the nitrided layer of the coating layer. A fluororesin layer formed on opposite surfaces of the surface layer with a bonding layer containing Cr and Al in between. The coating layer further improves the cutting edge, enhances cutting performance of the cutting edge, and maintains the enhanced cutting performance to improve the durability of the cutting edge.Type: GrantFiled: March 27, 2008Date of Patent: January 7, 2014Assignee: Kai R&D Center Co., Ltd.Inventors: Koichiro Akari, Hiroshi Ohtsubo
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Patent number: 8614119Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.Type: GrantFiled: August 28, 2012Date of Patent: December 24, 2013Assignee: Fujitsu Semiconductor LimitedInventors: Tomoyuki Fukuda, Yoshihiro Kubota, Hiroshi Ohtsubo, Yuichi Asano
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Patent number: 8614505Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.Type: GrantFiled: August 28, 2012Date of Patent: December 24, 2013Assignee: Fujitsu Semiconductor LimitedInventors: Tomoyuki Fukuda, Yoshihiro Kubota, Hiroshi Ohtsubo, Yuichi Asano
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Patent number: 8564108Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.Type: GrantFiled: August 28, 2012Date of Patent: October 22, 2013Assignee: Fujtsu Semiconductor LimitedInventors: Tomoyuki Fukuda, Yoshihiro Kubota, Hiroshi Ohtsubo, Yuichi Asano
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Patent number: 8522645Abstract: In a vacuum chamber, the edge of each blade group is subjected to an ion beam treatment under predetermined conditions using a plasma ion gun and argon as a medium, and is subjected to a plasma ion implantation of nitrogen plasma under predetermined conditions using a plasma ion implantation gun. As a result, it is possible to provide a blade member having an edge of a cutting quality enhanced by increasing the sharpness, a blade member having an edge of a rigidity enhanced by increasing the hardness, and a working apparatus capable of working those edges efficiently.Type: GrantFiled: December 24, 2008Date of Patent: September 3, 2013Assignees: Nagata Seiki Co., Ltd., Kai R&D Center Co., Ltd.Inventors: Kensuke Uemura, Hiroshi Ohtsubo
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Publication number: 20120319264Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.Type: ApplicationFiled: August 28, 2012Publication date: December 20, 2012Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Tomoyuki Fukuda, Yoshihiro Kubota, Hiroshi Ohtsubo, Yuichi Asano
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Publication number: 20120322209Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.Type: ApplicationFiled: August 28, 2012Publication date: December 20, 2012Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Tomoyuki Fukuda, Yoshihiro Kubota, Hiroshi Ohtsubo, Yuichi Asano
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Publication number: 20120319275Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.Type: ApplicationFiled: August 28, 2012Publication date: December 20, 2012Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Tomoyuki Fukuda, Yoshihiro Kubota, Hiroshi Ohtsubo, Yuichi Asano
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Patent number: 8278743Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.Type: GrantFiled: February 9, 2011Date of Patent: October 2, 2012Assignee: Fujitsu Semiconductor LimitedInventors: Tomoyuki Fukuda, Yoshihiro Kubota, Hiroshi Ohtsubo, Yuichi Asano
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Publication number: 20110316131Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.Type: ApplicationFiled: February 9, 2011Publication date: December 29, 2011Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Tomoyuki Fukuda, Yoshihiro Kubota, Hiroshi Ohtsubo, Yuichi Asano
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Publication number: 20100288097Abstract: In a vacuum chamber, the edge of each blade group is subjected to an ion beam treatment under predetermined conditions using a plasma ion gun and argon as a medium, and is subjected to a plasma ion implantation of nitrogen plasma under predetermined conditions using a plasma ion implantation gun. As a result, it is possible to provide a blade member having an edge of a cutting quality enhanced by increasing the sharpness, a blade member having an edge of a rigidity enhanced by increasing the hardness, and a working apparatus capable of working those edges efficiently.Type: ApplicationFiled: December 24, 2008Publication date: November 18, 2010Applicants: NAGATA SEIKI CO., LTD., KAI R & D CENTER CO., LTD.Inventors: Kensuke UEMURA, Hiroshi OHTSUBO
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Patent number: 7781259Abstract: In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.Type: GrantFiled: September 7, 2006Date of Patent: August 24, 2010Assignee: Fujitsu Semiconductor LimitedInventors: Youhei Nagahama, Katsunori Wako, Yuichi Asano, Masanori Takahashi, Haruo Kojima, Masamichi Fujimoto, Hiroshi Ohtsubo, Yuki Yasuda
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Publication number: 20100024222Abstract: In a cutting edge of a razor blade, a non-nitrided layer containing Ti, Al, and Cr is formed on opposite surfaces of a base plate as a portion of a coating layer. A remaining layer containing Ti, Al, Cr, and N is formed on opposite surfaces of the non-nitrided layer as a portion of a nitrided layer of the coating layer. A surface layer containing Ti, Al, Cr, and N is formed on opposite surfaces of the remaining layer as a portion of the nitrided layer of the coating layer. A fluororesin layer is formed on opposite surfaces of the surface layer with a bonding layer containing Cr and Al in between. The coating layer including the non-nitrided layer and the nitrided layer further improves the cutting edge, enhances cutting performance of the cutting edge, and maintains the enhanced cutting performance to improve the durability of the cutting edge.Type: ApplicationFiled: March 27, 2008Publication date: February 4, 2010Inventors: Koichiro Akari, Hiroshi Ohtsubo
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Publication number: 20070010046Abstract: In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.Type: ApplicationFiled: September 7, 2006Publication date: January 11, 2007Applicant: FUJITSU LIMITEDInventors: Youhei Nagahama, Katsunori Wako, Yuichi Asano, Masanori Takahashi, Haruo Kojima, Masamichi Fujimoto, Hiroshi Ohtsubo, Yuki Yasuda
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Patent number: 7122402Abstract: In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.Type: GrantFiled: February 20, 2004Date of Patent: October 17, 2006Assignee: Fujitsu LimitedInventors: Youhei Nagahama, Katsunori Wako, Yuichi Asano, Masanori Takahashi, Haruo Kojima, Masamichi Fujimoto, Hiroshi Ohtsubo, Yuki Yasuda
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Patent number: 7060367Abstract: A blade with improved sharpness and durability is disclosed. The blade includes a base plate having an edge and a coating layer for coating the edge. The coating layer is formed of a material handling metal, and a tip of the coating layer is sharpened. It is preferred that an angle (Ba) between two tapered surfaces be between 15 to 45 degrees.Type: GrantFiled: June 4, 2001Date of Patent: June 13, 2006Assignee: Kai R&D Center Co., Ltd.Inventors: Katsuaki Yamada, Hiroshi Ohtsubo, Hiroyuki Tashita
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Patent number: 6886262Abstract: A razor handle includes a hard section and a soft section integrally formed and overlapping each other. On the rear surface of a gripping section, a second rear contact section of the soft section is exposed and a finger applying concave section is formed at the upper section of the second rear contact section. On the front surface of the gripping section, the first front contact section of the hard section is exposed at the boundary section with a side surface, the second front contact section of the soft section is exposed between the first front contact sections at the both boundary sections, and a concave area is formed on the upper section of the second front contact section.Type: GrantFiled: November 14, 2003Date of Patent: May 3, 2005Assignee: Kai R&D Center Co., Ltd.Inventors: Hiroshi Ohtsubo, Kazuhiko Isogimi
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Publication number: 20050070051Abstract: In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.Type: ApplicationFiled: February 20, 2004Publication date: March 31, 2005Applicant: FUJITSU LIMITEDInventors: Youhei Nagahama, Katsunori Wako, Yuichi Asano, Masanori Takahashi, Haruo Kojima, Masamichi Fujimoto, Hiroshi Ohtsubo, Yuki Yasuda
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Publication number: 20040099120Abstract: A blade (1) with improved sharpness and durability is disclosed. The blade includes a base plate (3) having an edge and a coating layer (6) for coating the edge. The coating layer is formed of a material including metal, and a tip of the coating layer (2a) is sharpened. It is preferred that an angle (&bgr;a) between two tapered surfaces (7a, 8a) be between 15 to 45 degrees.Type: ApplicationFiled: December 5, 2002Publication date: May 27, 2004Inventors: Katsuaki Yamada, Hiroshi Ohtsubo, Hiroyuki Tashita
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Publication number: 20040093735Abstract: A razor handle includes a hard section and a soft section integrally formed and overlapping each other. On the rear surface of a gripping section, a second rear contact section of the soft section is exposed and a finger applying concave section is formed at the upper section of the second rear contact section. On the front surface of the gripping section, the first front contact section of the hard section is exposed at the boundary section with a side surface, the second front contact section of the soft section is exposed between the first front contact sections at the both boundary sections, and a concave area is formed on the upper section of the second front contact section.Type: ApplicationFiled: November 14, 2003Publication date: May 20, 2004Inventors: Hiroshi Ohtsubo, Kazuhiko Isogimi