Patents by Inventor Hiroshi Ooshima

Hiroshi Ooshima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240162284
    Abstract: A manufacturing method of a semiconductor device including a buffer region in a semiconductor substrate is provided, comprising: obtaining a substrate concentration index related to at least one of an oxygen chemical concentration or a carbon chemical concentration included in the semiconductor substrate; classifying the substrate concentration index as any index range among a predetermined plurality of index ranges; determining an acceleration energy of hydrogen ions to be implanted into the semiconductor substrate to an acceleration energy that is preset to correspond to the classified index range; and forming a buffer region of the semiconductor device by implanting hydrogen ions into the semiconductor substrate with the determined acceleration energy.
    Type: Application
    Filed: September 21, 2023
    Publication date: May 16, 2024
    Inventors: Hiroshi TAKISHITA, Yuusuke OOSHIMA, Takashi YOSHIMURA, Shuntaro YAGUCHI
  • Publication number: 20240153829
    Abstract: Provided is a method for manufacturing a semiconductor device, wherein the method: obtains correlated information indicating relationship between a process condition under which a doping region is formed and a defect evaluation value of the doping region; forms the doping region in a substrate for evaluation under a set first process condition; obtains a measurement value of the defect evaluation value of the substrate for evaluation in which the doping region has been formed; obtains, in the correlated information, the defect evaluation value corresponding to the first process condition as a reference value, and compares the measurement value of the defect evaluation value with the reference value; and adjusts the process condition in a process of manufacturing the semiconductor device by using the substrate for manufacture.
    Type: Application
    Filed: October 24, 2023
    Publication date: May 9, 2024
    Inventors: Yuusuke OOSHIMA, Takashi YOSHIMURA, Hiroshi TAKISHITA, Shuntaro YAGUCHI
  • Patent number: 10640532
    Abstract: The present invention provides a crystal of reduced glutathione that is stable, and is easy to process, and a method for producing the crystal. According to the present invention, a crystal of a metal salt of reduced glutathione is produced by suspending an amorphous solid of a metal salt of reduced glutathione in a hydrophobic organic solvent, and adding water to the resulting suspension to precipitate a crystal of a metal salt of reduced glutathione.
    Type: Grant
    Filed: March 31, 2016
    Date of Patent: May 5, 2020
    Assignees: University Public Corporation Osaka, Kyowa Hakko Bio Co., Ltd.
    Inventors: Hiroshi Ooshima, Koichi Igarashi, Hiroshi Nagano, Akihiro Fujimoto, Kenta Fukumoto, Kazunari Fukumoto, Tomoya Yokoi
  • Publication number: 20180094025
    Abstract: The present invention provides a crystal of reduced glutathione that is stable, and is easy to process, and a method for producing the crystal. According to the present invention, a crystal of a metal salt of reduced glutathione is produced by suspending an amorphous solid of a metal salt of reduced glutathione in a hydrophobic organic solvent, and adding water to the resulting suspension to precipitate a crystal of a metal salt of reduced glutathione.
    Type: Application
    Filed: March 31, 2016
    Publication date: April 5, 2018
    Applicants: Osaka City University, Kyowa Hakko Bio Co., Ltd.
    Inventors: Hiroshi OOSHIMA, Koichi IGARASHI, Hiroshi NAGANO, Akihiro FUJIMOTO, Kenta FUKUMOTO (deceased), Kazunari FUKUMOTO, Tomoya YOKOI
  • Patent number: 7798653
    Abstract: A gear portion meshing with the first step of a pinion gear at the side of a motor, which is a driving unit of optical aperture mechanism, is designed to be a two-gears composition of a gear portion abutting on one side surface of the channel of the pinion gear, and a gear portion abutting on the other side surface of the channel of the pinion gear.
    Type: Grant
    Filed: August 9, 2006
    Date of Patent: September 21, 2010
    Assignee: Hitachi Ltd.
    Inventors: Shinro Inui, Hiroshi Ooshima, Michiyuki Yoshino
  • Publication number: 20090174869
    Abstract: A gear portion meshing with the first step of a pinion gear at the side of a motor, which is a driving unit of optical aperture mechanism, is designed to be a two-gears composition of a gear portion abutting on one side surface of the channel of the pinion gear, and a gear portion abutting on the other side surface of the channel of the pinion gear.
    Type: Application
    Filed: August 9, 2006
    Publication date: July 9, 2009
    Inventors: Shinro Inui, Hiroshi Ooshima, Michiyuki Yoshino
  • Patent number: 7011708
    Abstract: A device includes an agitation tank, a liquid circulation means for circulating a liquid along a tank wall of the agitation tank, and at least one auxiliary heat transfer means provided inside the agitation tank, wherein the auxiliary heat transfer means is constantly put in a wetted state.
    Type: Grant
    Filed: September 17, 2001
    Date of Patent: March 14, 2006
    Assignee: Kansai Chemical Engineering Co. Ltd.
    Inventors: Hideo Noda, Hiroshi Ooshima, Takaya Inoue, Hiroaki Ueda
  • Publication number: 20030190271
    Abstract: A device includes an agitation tank, a liquid circulation means for circulating a liquid along a tank wall of the agitation tank, and at least one auxiliary heat transfer means provided inside the agitation tank, wherein the auxiliary heat transfer means is constantly put in a wetted state.
    Type: Application
    Filed: March 27, 2003
    Publication date: October 9, 2003
    Inventors: Hideo Noda, Hiroshi Ooshima, Takaya Inoue, Hiroaki Ueda
  • Patent number: 6458332
    Abstract: The invention provides a crystallization apparatus that includes an agitation tank, a liquid circulation means for circulating a liquid or a slurry along a wall of the agitation tank, and one or more temperature difference creation means capable of creating a temperature difference at the wall of the agitation tank, wherein the temperature difference creation means is installed to the agitation tank. The temperature difference creation means is, for example, arranged at a region where liquid or slurry spouted by rotating the liquid spouting device contacts the wall of the agitation tank or a region below that region, and which increases or decreases the temperature of the spouted liquid or slurry compared to the temperature of surrounding liquid or slurry. Since the apparatus with this configuration has a large vaporization area and a large heat transfer area, the induction period for crystal generation can be shortened, and crystals with narrow size distribution and large size can be obtained.
    Type: Grant
    Filed: March 9, 2001
    Date of Patent: October 1, 2002
    Assignee: Kansai Chemical Engineering Co., Ltd.
    Inventors: Hiroshi Ooshima, Hideo Noda
  • Publication number: 20010011520
    Abstract: The invention provides a crystallization apparatus that includes an agitation tank, a liquid circulation means for circulating a liquid or a slurry along a wall of the agitation tank, and one or more temperature difference creation means capable of creating a temperature difference at the wall of the agitation tank, wherein the temperature difference creation means is installed to the agitation tank. The temperature difference creation means is, for example, arranged at a region where liquid or slurry spouted by rotating the liquid spouting device contacts the wall of the agitation tank or a region below that region, and which increases or decreases the temperature of the spouted liquid or slurry compared to the temperature of surrounding liquid or slurry. Since the apparatus with this configuration has a large vaporization area and a large heat transfer area, the induction period for crystal generation can be shortened, and crystals with narrow size distribution and large size can be obtained.
    Type: Application
    Filed: March 9, 2001
    Publication date: August 9, 2001
    Inventors: Hiroshi Ooshima, Hideo Noda