Patents by Inventor Hiroshi Satani
Hiroshi Satani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7250326Abstract: The present invention provides a method of forming a transparent conductive film at a low temperature that is suitable for use with a synthetic resin substrate. According to the production method of a substrate with an electrode of the present invention, an oxide conductive film composed of an amorphous material or mainly composed of an amorphous material is formed on a substrate at a temperature equal to or less than the crystallization temperature of the film, and subsequently, the formed oxide conductive film is crystallized by heating. The oxide conductive film is processed into the shape of an electrode either before or after crystallization, according to necessity.Type: GrantFiled: November 19, 2003Date of Patent: July 31, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Naomi Kaneko, Naohide Wakita, Hiroshi Satani, Tsuyoshi Uemura
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Publication number: 20050129860Abstract: A liquid resin material stored in a resin material cup is sent to a supply tank under pressure through a primary side supply pipe by increasing the pressure in a pressure tank. The supply tank is provided with a piston that is displaced in accordance with the amount of the resin material in the supply tank, and the resin material is quantified by the stroke of the piston. The quantified resin material is sent to a heating member through an evaporation side supply pipe, is evaporated by heating, and condenses on a substrate. The resin material is quantified by filling the supply tank with the resin material temporarily, and only the filling resin material is sent to the heating member. Therefore, an evaporation amount becomes constant, and as a result, the thickness of a resin thin film is stabilized.Type: ApplicationFiled: April 2, 2003Publication date: June 16, 2005Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Noriyasu Echigo, Hiroshi Satani, Hideki Okumura, Hisaaki Tachihara
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Publication number: 20050122039Abstract: An organic luminescence device uses a substrate with a gas-barrier film in which a gas-barrier film containing an amorphous oxide and at least two kinds of oxides selected from the group consisting of boron oxide, phosphorus oxide, sodium oxide, potassium oxide, lead oxide, titanium oxide, magnesium oxide, and barium oxide is formed on a substrate. The selected two kinds of oxides are a combination of an oxide of an element having a large atomic radius and an oxide of an element having a small atomic radius. The substrate is made of glass or plastic. As a result, the organic luminescence device using a substrate excellent in gas-barrier capability to prevent the infiltration of oxygen, water vapor, etc. from outside is provided.Type: ApplicationFiled: March 29, 2002Publication date: June 9, 2005Applicant: Matsushita Electric Industrial Co., Ltd.Inventor: Hiroshi Satani
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Patent number: 6864938Abstract: A liquid crystal display panel comprises a liquid crystal layer sandwiched between a first resin substrate and a second resin substrate, a first electrode and a second electrode provided over respective opposed surfaces of the first and second resin substrates, and a first insulating film provided between the first electrode and the liquid crystal layer. The product of the film stress of the first electrode multiplied by the film thickness thereof is smaller than the product of the film stress of the second electrode multiplied by the film thickness thereof.Type: GrantFiled: May 7, 2002Date of Patent: March 8, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Naomi Kaneko, Hiroshi Satani
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Patent number: 6806498Abstract: In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.Type: GrantFiled: August 15, 2002Date of Patent: October 19, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yoshinao Taketomi, Keizaburo Kuramasu, Masumi Izuchi, Hiroshi Satani, Hiroshi Tsutsu, Hikaru Nishitani, Mikihiko Nishitani, Masashi Goto, Yoshiko Mino
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Patent number: 6786790Abstract: A method for manufacturing an image display element having a resin substrate that holds a display functional portion on which images are displayed, having: an inorganic film forming step of forming inorganic films on both surfaces of the resin substrate, and a dehydration step of dehydrating the resin substrate before or after the inorganic film forming step, wherein the resin substrate subjected to the inorganic film forming step and the dehydration step and an other substrate are bonded to each other by a sealing material, and then the sealing material is cured by heating at least the resin substrate.Type: GrantFiled: April 5, 2002Date of Patent: September 7, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takaiki Nomura, Hiroshi Satani, Naomi Kaneko
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Patent number: 6762816Abstract: A liquid crystal display comprises an array substrate in which a common electrode, a pixel electrode, a scanning signal line, a video signal line and a semiconductor switching element are provided, an opposed substrate, and a liquid crystal layer interposed between the array substrate and opposed substrate. The line width of at least either the common electrode or the pixel electrode is larger than the distance between the common electrode and the pixel electrode. The film thickness of at least one of the common electrode and the pixel electrode is larger than the thickness of at least either the scanning signal line or the video signal line. As a result, an inplane electric field liquid crystal display having a wide viewing angle, high-speed response, and high image quality such as high luminance is provided.Type: GrantFiled: December 11, 2001Date of Patent: July 13, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hiroyuki Yamakita, Katsuhiko Kumagawa, Kazuo Inoue, Akinori Shiota, Ichiro Sato, Hiroshi Satani, Masanori Kimura, Satoshi Asada
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Publication number: 20040123646Abstract: In a gas permeability measurement method according to the present invention, an isotopic gas having a mass number different to that of a target gas for measurement is introduced into one of two spaces divided by a test piece, and the isotopic gas having permeated the test piece and transferred to another space is detected to thereby measure the permeability of the target gas.Type: ApplicationFiled: December 11, 2003Publication date: July 1, 2004Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTDInventors: Noriyasu Echigo, Hideki Okumura, Hiroshi Satani
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Publication number: 20040104121Abstract: The present invention provides a method of forming a transparent conductive film at a low temperature that is suitable for use with a synthetic resin substrate. According to the production method of a substrate with an electrode of the present invention, an oxide conductive film composed of an amorphous material or mainly composed of an amorphous material is formed on a substrate at a temperature equal to or less than the crystallization temperature of the film, and subsequently, the formed oxide conductive film is crystallized by heating. The oxide conductive film is processed into the shape of an electrode either before or after crystallization, according to necessity.Type: ApplicationFiled: November 19, 2003Publication date: June 3, 2004Applicant: Matsushita Elec. Ind. Co. Ltd.Inventors: Naomi Kaneko, Naohide Wakita, Hiroshi Satani, Tsuyoshi Uemura
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Patent number: 6697141Abstract: A liquid crystal display comprises an array substrate in which a common electrode, a pixel electrode, a scanning signal line, a video signal line and a semiconductor switching element are provided, an opposed substrate, and a liquid crystal layer interposed between the array substrate and opposed substrate. The line width of at least either the common electrode or the pixel electrode is larger than the distance between the common electrode and the pixel electrode. The film thickness of at least one of the common electrode and the pixel electrode is larger than the thickness of at least either the scanning signal line or the video signal line. As a result, an in-plane electric field liquid crystal display having a wide viewing angle, high-speed response, and high image quality such as high luminance is provided.Type: GrantFiled: June 4, 2002Date of Patent: February 24, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hiroyuki Yamakita, Katsuhiko Kumagawa, Kazuo Inoue, Akinori Shiota, Ichiro Sato, Hiroshi Satani, Masanori Kimura, Satoshi Asada
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Patent number: 6677062Abstract: The present invention provides a method of forming a transparent conductive film at a low temperature that is suitable for use with a synthetic resin substrate. According to the production method of a substrate with an electrode of the present invention, an oxide conductive film composed of an amorphous material or mainly composed of an amorphous material is formed on a substrate at a temperature equal to or less than the crystallization temperature of the film, and subsequently, the formed oxide conductive film is crystallized by heating. The oxide conductive film is processed into the shape of an electrode either before or after crystallization, according to necessity.Type: GrantFiled: March 19, 2002Date of Patent: January 13, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Naomi Kaneko, Naohide Wakita, Hiroshi Satani, Tsuyoshi Uemura
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Patent number: 6528397Abstract: In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203 is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.Type: GrantFiled: June 16, 2000Date of Patent: March 4, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yoshinao Taketomi, Keizaburo Kuramasu, Masumi Izuchi, Hiroshi Satani, Hiroshi Tsutsu, Hikaru Nishitani, Mikihiko Nishitani, Masashi Goto, Yoshiko MIno
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Publication number: 20030022471Abstract: In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203. is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.Type: ApplicationFiled: August 15, 2002Publication date: January 30, 2003Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Yoshinao Taketomi, Keizaburo Kuramasu, Masumi Izuchi, Hiroshi Satani, Hiroshi Tsutsu, Hikaru Nishitani, Mikihiko Nishitani, Masashi Goto, Yoshiko Mino
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Publication number: 20030020859Abstract: A liquid crystal display panel comprises a liquid crystal layer sandwiched between a first resin substrate and a second resin substrate, a first electrode and a second electrode provided over respective opposed surfaces of the first and second resin substrates, and a first insulating film provided between the first electrode and the liquid crystal layer. The product of the film stress of the first electrode multiplied by the film thickness thereof is smaller than the product of the film stress of the second electrode multiplied by the film thickness thereof.Type: ApplicationFiled: May 7, 2002Publication date: January 30, 2003Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Naomi Kaneko, Hiroshi Satani
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Publication number: 20020197460Abstract: The present invention provides a method of forming a transparent conductive film at a low temperature that is suitable for use with a synthetic resin substrate. According to the production method of a substrate with an electrode of the present invention, an oxide conductive film composed of an amorphous material or mainly composed of an amorphous material is formed on a substrate at a temperature equal to or less than the crystallization temperature of the film, and subsequently, the formed oxide conductive film is crystallized by heating. The oxide conductive film is processed into the shape of an electrode either before or after crystallization, according to necessity.Type: ApplicationFiled: March 19, 2002Publication date: December 26, 2002Inventors: Naomi Kaneko, Naohide Wakita, Hiroshi Satani, Tsuyoshi Uemura
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Publication number: 20020164916Abstract: A method for manufacturing an image display element having a resin substrate that holds a display functional portion on which images are displayed, comprising: an inorganic film forming step of forming inorganic films on both surfaces of the resin substrate, and a dehydration step of dehydrating the resin substrate before or after the inorganic film forming step, wherein the resin substrate subjected to the inorganic film forming step and the dehydration step and an other substrate are bonded to each other by a sealing material, and then the sealing material is cured by heating at least the resin substrate.Type: ApplicationFiled: April 5, 2002Publication date: November 7, 2002Inventors: Takaiki Nomura, Hiroshi Satani, Naomi Kaneko
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Publication number: 20020154262Abstract: A liquid crystal display comprises an array substrate in which a common electrode, a pixel electrode, a scanning signal line, a video signal line and a semiconductor switching element are provided, an opposed substrate, and a liquid crystal layer interposed between the array substrate and opposed substrate. The line width of at least either the common electrode or the pixel electrode is larger than the distance between the common electrode and the pixel electrode. The film thickness of at least either the scanning signal line or the video signal line. As a result, an in-plane electric field liquid crystal display having a wide viewing angle, high-speed response, and high image quality such as high luminance is provided.Type: ApplicationFiled: June 4, 2002Publication date: October 24, 2002Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Hiroyuki Yamakita, Katsuhiko Kumagawa, Kazuo Inoue, Akinori Shiota, Ichiro Sato, Hiroshi Satani, Masanori Kimura, Satoshi Asada
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Patent number: 5737468Abstract: A polyethylene resin composition for spacer for optical fiber cable provided with a plurality of channels spirally formed on the periphery surface thereof for receiving the optical fiber comprising polyethylene resin having a melt index of more than or equal to 0.01 g/10 min to less than 0.30 g/10 min, a density of 0.941 to 0.955 g/cm.sup.3 and a flow ratio (HLMI/MLMI) in accordance with JIS K7210 of 20 to 55, and optionally fluorine elastomer.Type: GrantFiled: October 12, 1995Date of Patent: April 7, 1998Assignees: Showa Denko K.K., Sumitomo Electric Industries, Ltd.Inventors: Kunihiro Sasai, Terumitu Kotani, Akira Nakamura, Hiroshi Shibano, Takashi Tanaka, Takashi Saito, Hiroshi Satani
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Patent number: 5398127Abstract: An active matrix type of twisted nematic liquid crystal display is provided with a lower alignment layer rubbed in rubbing directions RD3, RD4 opposite to each other, an upper alignment layer rubbed in rubbing directions RD5, RD6 opposite to each other, a liquid crystal layer arranged between the lower and upper alignment layers and filled with liquid crystal molecules set in a nematic liquid crystal phase, a pixel electrode and a common electrode for inducing a vertical electric field in the liquid crystal layer, and a source line and gate line driving a switching device for applying an electric potential to the pixel electrode. The rubbing direction on the substrate with the switching device is at an angle of 1.degree.-44.degree. to either the source or gate line. In this case, major axes of a group of liquid crystal molecules arranged above the pixel electrode are twisted in a clockwise direction, and major axes of other group of liquid crystal molecules are twisted in a counterclockwise direction.Type: GrantFiled: March 2, 1993Date of Patent: March 14, 1995Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hirofumi Kubota, Shoichi Ishihara, Hirofumi Wakemoto, Keisuke Tsuda, Hiroshi Satani, Katsuji Hattori
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Patent number: 5122296Abstract: This invention prevents a time-course deterioration of characteristics of a liquid crystal panel and dramatically increases the life of the panel by using a ferroelectric liquid crystal composition in which a proper amount of aliphatic amine or epoxy compound is added to a ferroelectric liquid crystal material.Type: GrantFiled: October 17, 1990Date of Patent: June 16, 1992Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kazuhiro Johten, Tsuyoshi Uemura, Hiroyuki Onishi, Hideaki Mochizuki, Hiroshi Satani