Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor absorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: Disclosed are a printing plate precursor, a fabrication process of the printing plate precursor, a fabrication process of a printing plate, a regeneration process of the printing plate, a printing press, and a coating formulation for the printing plate precursor. According to the present invention, a printing plate can be fabricated directly from digital data, and sufficient image quality can be obtained without a developing step, i.e., a developer. To permit repeated use of the precursor, the precursor has a surface, which contains a photocatalyst and is capable of showing hydrophilicity when exposed to activating light having energy higher than band gap energy of the photocatalyst.

Abstract: Disclosed are a printing plate precursor, a fabrication process of the printing plate precursor, a fabrication process of a printing plate, a regeneration process of the printing plate, a printing press, and a coating formulation for the printing plate precursor. According to the present invention, a printing plate can be fabricated directly from digital data, and sufficient image quality can be obtained without a developing step, i.e., a developer. To permit repeated use of the precursor, the precursor has a surface, which contains a photocatalyst and is capable of showing hydrophilicity when exposed to activating light having energy higher than band gap energy of the photocatalyst.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: It is the primary object of the present invention to provide a printing plate, a fabricating method thereof, a method of making a printing plate with a print image, a method of reproducing the printing plate with a print image, and a printing press that are capable of reducing the light irradiation energy required for writing an image when making a printing plate and erasing the image when reproducing the printing plate. A printing plate including a photocatalyst layer. The photocatalyst layer contains a photocatalyst TiO2 or a TiO2 compound in a surface thereof. The volume rate of an anatase-type crystal in the total crystal component of the photocatalyst TiO2 or TiO2 compound is between 0.4 and 1.0. The total volume crystallization ratio of the photocatalyst is 20% or greater.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: Disclosed are a printing plate precursor, a fabrication process of the printing plate precursor, a fabrication process of a printing plate, a regeneration process of the printing plate, a printing press, and a coating formulation for the printing plate precursor. According to the present invention, a printing plate can be fabricated directly from digital data, and sufficient image quality can be obtained without a developing step, i.e., a developer. To permit repeated use of the precursor, the precursor has a surface, which contains a photocatalyst and is capable of showing hydrophilicity when exposed to activating light having energy higher than band gap energy of the photocatalyst.

Abstract: A steam injector system comprises a plurality of steam injectors each being provided with with a check valve adapted for water supply, a check valve adapted for steam supply, a check valve adapted for overflow and a check valve adapted for discharge and the respective water check valves, steam check valves, overflow check valves and discharge check valves are connected. In another aspect, a steam injector system comprises a plurality of first to last stage steam injectors arranged in series with each other, the last stage steam injector being provided with a relief valve disposed at a last stage overflow drain port, and a pressure pulsation absorbing device is disposed at least between the last stage overflow drain valve and the relief valve.

Abstract: A unique system is disclosed which controls a pressure in a pneumatic pressure supply line of a vehicle in response to both a pressure developing in an accumulator (12) included in the supply line and an engine load, so that a compressor (10) for providing the pressure is activated under light load engine operation, as when air brakes are applied, to effect an engine brake and to elevate the accumulator pressure for reducing the total energy consumption and, therefore, total fuel consumption. A pressure feedback line (16) communicates a pressure in the accumulator (12) to an unloading pressure control valve (32) through a solenoid operated valve (34), which is controlled in response to an output of an engine load sensor (42) and that of a pressure sensor (44). Under heavy load engine operation, the valve (34) is opened at a first pressure level during an elevation of the pressure and closed at a second pressure level which is sufficiently lower than the first during a drop of the pressure.