Abstract: A substrate processing apparatus includes a substrate stage on which a substrate is disposed, a first radio-frequency power supply configured to supply first radio-frequency power having a first frequency to the substrate stage, an impedance converter configured to convert an impedance on a load side seen from the first radio-frequency power supply into a set impedance, a second radio-frequency power supply configured to supply second radio-frequency power having a second frequency lower than the first frequency to the substrate stage, and a controller configured to control the set impedance of the impedance converter, and the controller sets the set impedance according to a substrate processing.

Abstract: A method of processing a substrate includes: a placement step of placing the substrate on an electrostatic chuck set to have a predetermined temperature; a first attraction step of attracting the substrate onto the electrostatic chuck by applying a first direct current (DC) voltage to the electrostatic chuck; a holding step of holding the attraction of the substrate by the electrostatic chuck while applying the first DC voltage to the electrostatic chuck, until a temperature difference between the electrostatic chuck and the substrate becomes 30 degrees C. or less; and a second attraction step of attracting the substrate onto the electrostatic chuck by applying a second DC voltage, which is higher than the first DC voltage, to the electrostatic chuck.

Abstract: A method of processing a substrate includes: a placement step of placing the substrate on an electrostatic chuck set to have a predetermined temperature; a first attraction step of attracting the substrate onto the electrostatic chuck by applying a first direct current (DC) voltage to the electrostatic chuck; a holding step of holding the attraction of the substrate by the electrostatic chuck while applying the first DC voltage to the electrostatic chuck, until a temperature difference between the electrostatic chuck and the substrate becomes 30 degrees C. or less; and a second attraction step of attracting the substrate onto the electrostatic chuck by applying a second DC voltage, which is higher than the first DC voltage, to the electrostatic chuck.

Abstract: There is a shower head through which a processing gas is supplied into an inside of a processing chamber, comprising: a cooling plate having a gas diffusion chamber, and a plurality of first through holes passing through from the gas diffusion chamber to a first surface on a processing chamber side; an upper electrode having a second surface in contact with the first surface of the cooling plate, a third surface configured to form an inner surface of the processing chamber, and a plurality of second through holes passing through from the second surface to the third surface; and a plurality of recesses formed in the first surface or the second surface and provided apart from each other, wherein one of the plurality of first through holes is connected to at least two of the plurality of second through holes via one of the plurality of recesses.

Abstract: An upper electrode assembly used in a plasma processing apparatus is provided. The upper electrode assembly comprises: an electrode plate; a metal plate; and a heat transfer sheet disposed between the electrode plate and the metal plate and having a vertically oriented portion. The vertically oriented portion has a plurality of vertically oriented graphene structures oriented along a vertical direction.

Abstract: A plasma processing apparatus includes a chamber, a substrate support including a bottom electrode, and a top electrode assembly disposed above the substrate support. The top electrode assembly includes a top electrode plate and a thermally conductive plate disposed above the top electrode plate. The top electrode assembly includes a coolant flow path disposed within the thermally conductive plate. The top electrode assembly includes at least one heating element thermally connected to the thermally conductive plate, the heating element being disposed at a location that does not overlap the coolant flow path in a height direction of the plasma processing apparatus. The plasma processing apparatus includes a controller that controls at least one among a coolant flowing through the coolant flow path and the heating element, based on a temperature of the top electrode plate detected by a temperature sensor, to adjust the temperature of the top electrode plate.

Abstract: A plasma processing apparatus includes a plasma processing chamber; a plasma generator configured to generate a plasma in the plasma processing chamber; a substrate support disposed in the plasma processing chamber; a first conductive ring disposed to surround a substrate on the substrate support; an insulating ring disposed to surround the first conductive ring; and a second conductive ring disposed to surround the insulating ring, and connected to a ground potential.

Abstract: A substrate processing apparatus includes a processing chamber having a substrate support configured to support a substrate, a gas supply configured to supply a plurality of processing gases to the processing chamber, a plasma generator configured to generate plasma of the processing gases, and a controller configured to control the gas supply. The gas supply includes a first gas supply configured to supply a first processing gas to the processing chamber, and a second gas supply configured to inject a second processing gas to the first processing gas supplied to the processing chamber.

Abstract: A substrate processing apparatus includes a substrate stage on which a substrate is disposed, a first radio-frequency power supply configured to supply first radio-frequency power having a first frequency to the substrate stage, an impedance converter configured to convert an impedance on a load side seen from the first radio-frequency power supply into a set impedance, a second radio-frequency power supply configured to supply second radio-frequency power having a second frequency lower than the first frequency to the substrate stage, and a controller configured to control the set impedance of the impedance converter, and the controller sets the set impedance according to a substrate processing.

Abstract: A substrate support includes a substrate support surface on which a substrate is placed, a ring support surface on which an edge ring is placed to surround the substrate placed on the substrate support surface, and an electrode configured to attract and hold the edge ring on the ring support surface by an electrostatic force. A heat transfer sheet is attached to a surface of the edge ring facing the ring support surface, and the edge ring is placed on the ring support surface via the heat transfer sheet. A conductive film is formed on a surface of the heat transfer sheet facing the ring support surface. Further, the edge ring is held on the ring support surface by attracting and holding the conductive film of the heat transfer sheet attached to the edge ring onto the ring support surface by the electrostatic force generated by the electrode.

Abstract: Provided is a substrate processing apparatus comprising: a substrate support on which a substrate is mounted; a first radio frequency power supply that outputs first radio frequency power with a first frequency to the substrate support; a second radio frequency power supply that outputs second radio frequency power with a second frequency lower than the first frequency to the substrate support; a sensor that detects reflected waves received from the substrate support and a processor that controls the first radio frequency power supply so that an effective power, which is equal to a difference between the power of the reflected waves detected by the sensor and the output power of the first radio frequency power supply, reaches a set value.

Abstract: In a plasma etching method for etching a target object by plasma in a state where a pressure in a processing container having a consumable member is maintained at a constant level, variation of time for temperature decrease of the consumable member from a first temperature to a second temperature lower than the first temperature or variation of speed of the temperature decrease of the consumable member from the first temperature to the second temperature is measured. Further, a degree of consumption of the consumable member is estimated from the variation of time or the variation of speed based on information on correlation between the variation of time or the variation of speed and the degree of consumption of the consumable member.

Abstract: A cleaning method for cleaning a processing apparatus including a processing container, a mounting stage configured to mount an object to be processed inside the processing container, an edge ring disposed at a peripheral edge portion of the mounting stage, a gas supply unit configured to supply a gas into an inside of the processing container, and a direct current power source configured to apply a direct voltage to the edge ring, and an exhaust unit configured to exhaust the inside of the processing container includes a first process of exhausting the gas inside the processing container by the exhaust unit while the gas is supplied into the inside of the processing container by the gas supply unit at least predetermined flow rate, and a second process of applying a predetermined direct voltage to the edge ring by the direct current power source.

Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.

Abstract: A method of processing a substrate includes: a placement step of placing the substrate on an electrostatic chuck set to have a predetermined temperature; a first attraction step of attracting the substrate onto the electrostatic chuck by applying a first direct current (DC) voltage to the electrostatic chuck; a holding step of holding the attraction of the substrate by the electrostatic chuck while applying the first DC voltage to the electrostatic chuck, until a temperature difference between the electrostatic chuck and the substrate becomes 30 degrees C. or less; and a second attraction step of attracting the substrate onto the electrostatic chuck by applying a second DC voltage, which is higher than the first DC voltage, to the electrostatic chuck.

Abstract: A method according to an aspect includes outputting gas continuously from a flow rate controller, closing a valve, obtaining a first pressure rise characteristic, outputting the gas intermittently from the flow rate controller, closing the valve, obtaining a second pressure rise characteristic, obtaining a third pressure rise characteristic, obtaining a fourth pressure rise characteristic, obtaining a first required time required from the third pressure rise characteristic, obtaining a second required time from the fourth pressure rise characteristic, obtaining an estimated time until a predetermined pressure is reached, in a case where the intermittent output of the gas is performed assuming that there is no delay time, and obtaining a parameter representing a difference between the estimated time and the second required time.

Abstract: A cleaning method for cleaning a processing apparatus including a processing container, a mounting stage configured to mount an object to be processed inside the processing container, an edge ring disposed at a peripheral edge portion of the mounting stage, a gas supply unit configured to supply a gas into an inside of the processing container, and a direct current power source configured to apply a direct voltage to the edge ring, and an exhaust unit configured to exhaust the inside of the processing container includes a first process of exhausting the gas inside the processing container by the exhaust unit while the gas is supplied into the inside of the processing container by the gas supply unit at least predetermined flow rate, and a second process of applying a predetermined direct voltage to the edge ring by the direct current power source.

Abstract: A gas supplying method of supplying a process gas containing a gas of at least one gaseous species into a process space in a semiconductor manufacturing apparatus includes supplying the process gas by controlling a flow rate value of the gas to be a first value during a first period; supplying the process gas by controlling the flow rate value of the gas to be a second value smaller than the first value during a second period; supplying the process gas by controlling the flow rate value of the gas to be a third value greater than the first value during a third period; and supplying the process gas by controlling the flow rate value of the gas to be a fourth value smaller than the second value during a fourth period, wherein these steps are periodically repeated in a predetermined order.

Abstract: In a method for applying a DC voltage to an electrode of a plasma processing apparatus, plasma of a gas is generated in an inner space of a chamber and an absolute value of a negative DC voltage applied from a DC power supply to the electrode that forms a part of the chamber or is provided in the inner space during the generation of the plasma is increased. A first voltage value is specified, the first voltage value being a voltage value measured at the electrode when a current starts to flow in the electrode during the increase of the absolute value of the negative DC voltage. A value of the DC voltage applied from the DC power supply to the electrode during the generation of the plasma is set to a second voltage value that is a sum of the first voltage value and a specified value.

Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.