Abstract: A method for preparing a highly crystallized metal powder, comprising: supplying at least one heat-decomposable metal compound powder into a reaction vessel using a carrier gas; and forming a metal powder by heating the metal compound powder in a state in which the metal compound powder is dispersed in a gas phase at a concentration of no more than 10 g/liter, at a temperature that is over the decomposition temperature of the metal compound powder and at least (Tm−200)° C. when the melting point of the metal contained in the metal compound powder is Tm° C. The method provides a high-purity, high-density, highly dispersible, fine, highly crystallized metal powder consisting of spherical particles of uniform size, which is suited to use in thick film pastes, and particularly conductor pastes and the like used in the preparation of multilayer ceramic electronic parts.

Abstract: A method for preparing a highly crystallized metal powder, involving the steps of: supplying at least one heat-decomposable metal compound powder into a reaction vessel using a carrier gas; and forming a metal powder by heating the metal compound powder in a state in which the metal compound powder is dispersed in a gas phase at a concentration of no more than 10 g/liter, at a temperature that is over the decomposition temperature of the metal compound powder and at least (Tm −200)° C. when the melting point of the metal contained in the metal compound powder is Tm° C. The method provides a high-purity, high-density, highly dispersible, fine, highly crystallized metal powder consisting of spherical particles of uniform size, which is suitable for use in thick film pastes, and particularly conductor pastes and the like used in the preparation of multilayer ceramic electronic parts.

Abstract: A method for preparing a highly crystallized metal powder, comprising: supplying at least one heat-decomposable metal compound powder into a reaction vessel using a carrier gas; and forming a metal powder by heating the metal compound powder in a state in which the metal compound powder is dispersed in a gas phase at a concentration of no more than 10 g/liter, at a temperature that is over the decomposition temperature of the metal compound powder and at least (Tm −200)° C. when the melting point of the metal contained in the metal compound powder is Tm° C. The method provides a high-purity, high-density, highly dispersible, fine, highly crystallized metal powder consisting of spherical particles of uniform size, which is suited to use in thick film pastes, and particularly conductor pastes and the like used in the preparation of multilayer ceramic electronic parts.