Abstract: An object of the present invention is to provide a vehicle body floor structure capable of effectively preventing deformation of a floor panel by increasing bending strength of the floor panel even when an upper reinforcing member of the floor panel is removed. A vehicle body floor structure of the present invention includes a dash cross member disposed along a kick-up portion on a lower surface side of a floor panel, a novel front side frame having an outer frame and an inner frame at a rear portion of a side frame body, and a floor panel on which beads are formed to form a closed cross-section in cooperation with the outer frame and the inner frame.

Abstract: The present invention provides a parthenocarpy regulatory gene including any of the following polynucleotides and use of the parthenocarpy regulatory gene. (1) A polynucleotide that encodes an amino acid sequence represented by SEQ ID NO: 1, (2) a polynucleotide that encodes an amino acid sequence having a sequence identity of 70% or higher relative to the amino acid sequence represented by SEQ ID NO: 1, (3) a polynucleotide that encodes an amino acid sequence in which 1 to 87 amino acids are substituted and/or the like in the amino acid sequence represented by SEQ ID NO: 1, and (4) a polynucleotide that is hybridized with a polynucleotide having a sequence complementary to the polynucleotide described in the above (1) under a stringent condition.

Abstract: An object of the present invention is to provide a vehicle body floor structure capable of effectively preventing deformation of a floor panel by increasing bending strength of the floor panel even when an upper reinforcing member of the floor panel is removed. A vehicle body floor structure of the present invention includes a dash cross member disposed along a kick-up portion on a lower surface side of a floor panel, a novel front side frame having an outer frame and an inner frame at a rear portion of a side frame body, and a floor panel on which beads are formed to form a closed cross-section in cooperation with the outer frame and the inner frame.

Abstract: A vehicle body front structure includes: a bracket 21 that is placed on a lower portion of a front side frame 12; and a front subframe 16 that is attached to a lower portion of the bracket with a bolt 22. The bracket includes: a closed-end hollow bracket body 30 that is suspended from the front side frame; a bulkhead 40 that is located above a bottom plate 31 of the bracket body and vertically partitions the bracket body; and a collar 50 that extends from the bulkhead to the bottom plate of the bracket body. A thickness t2 of the bulkhead is smaller than a thickness t1 of the bracket body. The bulkhead joined to the bracket body has a bulkhead-side flange 44 joined to the front side frame.

Abstract: A vehicle body front structure includes: a bracket 21 that is placed on a lower portion of a front side frame 12; and a front subframe 16 that is attached to a lower portion of the bracket with a bolt 22. The bracket includes: a closed-end hollow bracket body 30 that is suspended from the front side frame; a bulkhead 40 that is located above a bottom plate 31 of the bracket body and vertically partitions the bracket body; and a collar 50 that extends from the bulkhead to the bottom plate of the bracket body. A thickness t2 of the bulkhead is smaller than a thickness t1 of the bracket body. The bulkhead joined to the bracket body has a bulkhead-side flange 44 joined to the front side frame.

Abstract: A vertically aligned thin-film transistor array substrate in which there is no reduction in aperture ratio includes an etching-stop layer formed on an insulating layer; a passivation layer formed on the insulating layer that includes the etching-stop layer; a depression formed in the passivation layer and hollowing the passivation layer to the surface of the etching-stop layer; and a pixel electrode, which is recessed in conformity with the depression, formed on the passivation layer that includes the depression; wherein the etching-stop layer comprises a transparent semiconductor.

Abstract: A vertically aligned thin-film transistor array substrate in which there is no reduction in aperture ratio includes an etching-stop layer formed on an insulating layer; a passivation layer formed on the insulating layer that includes the etching-stop layer; a depression formed in the passivation layer and hollowing the passivation layer to the surface of the etching-stop layer; and a pixel electrode, which is recessed in conformity with the depression, formed on the passivation layer that includes the depression; wherein the etching-stop layer comprises a transparent semiconductor.

Abstract: A vertically aligned thin-film transistor array substrate in which there is no reduction in aperture ratio includes an etching-stop layer formed on an insulating layer; a passivation layer formed on the insulating layer that includes the etching-stop layer; a depression formed in the passivation layer and hollowing the passivation layer to the surface of the etching-stop layer; and a pixel electrode, which is recessed in conformity with the depression, formed on the passivation layer that includes the depression; wherein the etching-stop layer comprises a transparent semiconductor.

Abstract: A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.

Abstract: A vertically aligned thin-film transistor array substrate in which there is no reduction in aperture ratio includes an etching-stop layer formed on an insulating layer; a passivation layer formed on the insulating layer that includes the etching-stop layer; a depression formed in the passivation layer and hollowing the passivation layer to the surface of the etching-stop layer; and a pixel electrode, which is recessed in conformity with the depression, formed on the passivation layer that includes the depression; wherein the etching-stop layer comprises a transparent semiconductor.

Abstract: A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

Abstract: A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.

Abstract: A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

Abstract: A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

Abstract: A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

Abstract: A method of manufacturing a crystal oriented ceramics is disclosed. The method comprises preparing step, mixing step, shaping step and sintering method. At least one of anisotropically shaped powder, used as raw material, and a compact, formed by shaping step, is selected to have an orientation degree of 80% or more with a full width at half maximum (FWHM) of 15° or less according to a rocking curve method. A microscopic powder, having an average grain diameter one-third or less that of anisotropically shaped powder, is prepared for mixing therewith to prepare raw material mixture. The raw material mixture is shaped into the compact so as to allow oriented planes of anisotropically shaped powder to be oriented in a nearly identical direction. In a sintering step, anisotropically shaped powder and microscopic powder are sintered with each other to obtain the crystal oriented ceramics.

Abstract: A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

Abstract: A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.

Abstract: A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.

Abstract: A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.