Abstract: Provided is a liquid crystalline polymer composition comprising: 100 parts by weight of a LCP, and equal to or more than 0.01 and less than 1 part by weight of a low temperature softening inorganic glass filler whose softening temperature is equal to or less than 550° C. The composition can provide a molded article which cause no or less blister formation upon reflow soldering using a lead-free solder.

Abstract: To provide a spacer forming method by which spacers can be securely formed in a predetermined region on a substrate. Ink containing granular spacers is jetted onto a crossing portion of a black matrix 5 in the shape of lattice. Red pixel R, green pixel G and blue pixel B are formed in the openings of the lattice. The spacer containing ink is jetted onto the spacer forming positions from the nozzle by the ink jetting method. Plural drops of ink 7 are jetted onto each of the spacer forming positions on one of the opposite substrate E. The gap between the opposite substrates can be securely maintained at constant for filling liquid crystal.

Abstract: According to a first invention, since a flow of a spacer dispersed liquid is formed in a transporting chamber separated from a discharging chamber by an internal filter, the spacer dispersed liquid is stably discharged through an ejection hole, while the discharging chamber on a side of a nozzle plate is not affected by the flow of the spacer dispersed liquid. According to a second invention, since a spacer dispersed liquid does not flow inside a discharging chamber in a printing state in which the spacer dispersed liquid is discharged, the spacer dispersed liquid is stably discharged through an ejection hole. To the contrary, since the spacer dispersed liquid is directed inside both the discharging chamber and the transporting chamber in a waiting state in which the spacer dispersed liquid is not discharged, spacer particles in the spacer dispersed liquid do not settle.

Abstract: A thin film-forming apparatus, for ensuring uniform plane distribution of properties of a film formed on a substrate surface, has a gas-supply port 24a supplying a gas mixture from a gas-mixing chamber 24 to a shower head 25. The port is arranged at the peripheral portion on the bottom face of the gas-mixing chamber so that the gas mixture flows from the upper peripheral region of the head towards the center thereof. An exhaust port 32 discharging the exhaust gas generated in the film-forming chamber 3 is arranged at a position lower than the level of a stage 31 during film-formation directing the exhaust gas towards the side wall of the chamber 3 and discharging the exhaust gas through the exhaust port. The stage 31 is designed to move freely up and down to adjust the distance between the shower head 25 and substrate S.

Abstract: Film-forming apparatus including a film-forming vacuum chamber having a stage for a substrate, a chamber for mixing gas comprising a raw gas and a reactive gas connected to the film-forming chamber, a chamber for vaporizing the raw material, and a gas head for introducing the mixed gas into the film-forming chamber, disposed on the upper face of the film-forming chamber and opposed to the stage. Particle traps with controllable temperatures are positioned between the vaporization chamber and the mixing chamber and on the downstream side of the mixing chamber. When forming a thin film with the apparatus, a reactive gas and/or a carrier gas are passed through the film-forming chamber while opening a valve in a by-pass line, connecting the primary side to the secondary side of the particle trap arranged at the downstream side of the mixing chamber. The valve is then closed and the film-forming operation is initiated.

Abstract: An organozirconium compound comprises zirconium complexed with a &bgr;-diketone compound and an alkoxy group having a branched alkyl group, and which has formula (1): wherein R is a branched alkyl group having 4 or 5 carbons; and L1, L2, and L3, the same or different from each other, are each a &bgr;-diketone compound.

Abstract: Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2 -dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.

Abstract: Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2-dimethyl-l-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.

Abstract: Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2-dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.

Abstract: The ferroelectric thin film is formed from a liquid composition by the sol-gel processing which has a large amount of polarization, remarkably improved retention and imprint characteristics as compared with a PZT, minute grains and fine film quality, homogeneous electrical properties, and low leakage currents and which is suited for nonvolatile memories. The ferroelectric thin film of the present invention comprising a metal oxide represented by the general formula: (PbV CaW SrX LaY)(ZrZ Ti1−Z)O3, wherein 0.9≦V≦1.3, 0≦W≦0.1, 0≦X≦0.1, 0<Y≦0.1, 0<Z≦0.

Abstract: The ferroelectric thin film is formed from a liquid composition by the sol-gel processing which has a large amount of polarization, remarkably improved retention and imprint characteristics as compared with a PZT, minute grains and fine film quality, homogeneous electrical properties, and low leakage currents and which is suited for nonvolatile memories. The ferroelectric thin film of the present invention comprising a metal oxide represented by the general formula: (Pbv Caw SrX LaY)(ZrZ Ti1−Z)O3, wherein 0.9≦V≦1.3, 0≦W≦0.1, 0≦X≦0.1, 0<Y≦0.1, 0<Z≦0.

Abstract: A transistor on a silicon substrate is covered by an insulating layer. A conducting plug passes through the insulating layer to the transistor drain. The bottom electrode of a ferroelectric capacitor that directly overlies the plug and drain contacts the plug. The ferroelectric layer is self-patterned and completely overlies the memory cell. A self-patterned sacrificial layer completely overlies the ferroelectric layer. The bottom electrode of the capacitor is completely enclosed by the ferroelectric layer, the insulating layer, and the conducting plug.

Abstract: A first photosensitive liquid solution is applied to a substrate, patterned through exposure to radiation and development, and annealed to form a desired solid material, such as SrBi.sub.2 Ta.sub.2 O.sub.9, that is incorporated into a component of an integrated circuit Fabrication processes are designed protect the self-patterned solid material from conventional IC processing and to protect the conventional materials, such as silicon, from elements in the self-patterned solid material. In one embodiment, a layer of bismuth oxide is formed on the SrBi.sub.2 Ta.sub.2 O.sub.9 and a silicon oxide hole is etched to the bismuth oxide. The bismuth oxide protects the SrBi.sub.2 Ta.sub.2 O.sub.9 from the etchant, and is reduced by the etchant to bismuth. Any remaining bismuth oxide and much of the bismuth are vaporized in the anneal, and the remaining bismuth is incorporated into the SrBi.sub.2 Ta.sub.2 O.sub.9.

Abstract: Solution films of a photosensitive metal arylketone alcoholate are micro-patterned by exposure to ultraviolet radiation under a mask. The resultant patterns are developed in an apolar solvent and annealed to provide thin film metal oxides for use in integrated circuits.

Abstract: A photosensitive liquid precursor solution including titanium carboxyketoesters or titanium carboxydiketonates polymerizes upon exposure to ultraviolet radiation. The solution is applied to an integrated circuit substrate, masked, and exposed to ultraviolet radiation to pattern the liquid precursor film. Unexposed portions of the film are removed in a developer solution including alcohol and water. The remaining portion of the film constitutes a pattern that may be annealed to form a metal oxide.

Abstract: A photosensitive liquid solution is used to make thin films for use in integrated circuits. The photosensitive liquid solution contains a photo initiator, and solvent, and a mixture of metals bonded to free-radical-susceptible monomers. The metals are mixed in amounts corresponding to the desired stoichiometry of a metal oxide thin film that derives from the. The photosensitive liquid solution is applied to a substrate, soft baked, and exposed to ultraviolet radiation under a photo mask. The ultraviolet radiation patterns the soft-baked film through a free radical polymerization chain reaction. A solvent etch is used to remove the unpolymerized portion of the polymerized film. The remaining thin film pattern is annealed to provide a patterned metal oxide film.

Abstract: A metal organic liquid precursor solution includes metal organic complexes dispersed in an ester solvent. The ester solvent has medium length carbon chains to prevent the precipitation of strongly electropositive metals in solution. A liquid precursor solution is used to make thin film metal oxides of uniform thickness and consistent quality.

Abstract: High-purity MTiO.sub.3 (M=Sr and/or Ba)-type dielectric thin films with improved electric characteristics, particularly leakage currents and dielectric breakdown voltages, are prepared by MOCVD. Either or both a high-purity bis (.beta.-diketonato) Sr and Ba complexes, which each contain 1 ppm or less of each alkali metal and an alkaline earth metal as impurity metals, are used as the metal M supply sources. The high-purity volatile complexes are prepared by heat decomposition Sr or Ba nitrate (or acetate), which has been purified by a combination of recrystallization and ion-exchange chromatography, to contain 1 ppm or less of each alkali metal and alkaline earth metal as impurity metals, to thereby prepare high-purity SrO or BaO. The SrO or BaO is then reduced to high-purity metallic Sr or Ba by the thermit process, and then the metallic Sr or Ba is reacted with a .beta.-diketone to form the bis(.beta.-diketonato) complexes.

Abstract: Two types of high-purity Ti complexes, ?TiO(DPM: dipivaloylmethane).sub.2 !.sub.2 and cis-Ti(O-t-Bu).sub.2 (DPM).sub.2, and BST film-forming liquid compositions comprising solutions of either of the two types of high-purity Ti complexes and Ba(DPM).sub.2 and/or Sr(DPM).sub.2 in organic solvents can be used to form BST films. Crystals of the former complex are produced by adding purified water to a solution of TiCl.sub.2 (DPM).sub.2 in an organic solution, adding an alkali chemical to the solution to adjust the pH to 6.0-8.0 to thereby produce turbidity, and separating the organic layer which is then washed with water and heated to reflux. Crystals of the latter complex is produced by adding HDPM to a solution of Ti(O-t-Bu).sub.4 in an organic solvent, and heating the solution to reflux.

Abstract: A Pt film-forming composition comprises a dimethyl Pt(II) (N,N,N',N'-tetramethylethylenediamine) complex and an organic solvent. A Pt film is formed by applying this composition to a substrate and then subjecting the applied layer of the composition to a heat treatment. A Pt film pattern is obtained by applying this composition to a substrate, pattern-exposing the produced applied layer of the composition to radiation, developing the exposed layer, and then subjecting the developed layer to a heat treatment.