Patents by Inventor Hirotsugu Sugiura
Hirotsugu Sugiura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11993849Abstract: According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CH2 and a methyl group CH3 contained in the carbon hard mask satisfies the expression CH2/(CH2+CH3)?0.5.Type: GrantFiled: December 4, 2019Date of Patent: May 28, 2024Assignees: TOKYO ELECTRON LIMITED, National University Corporation Tokai National Higher Education and Research SystemInventors: Masaru Hori, Makoto Sekine, Hirotsugu Sugiura, Tsuyoshi Moriya, Satoshi Tanaka, Yoshinori Morisada
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Publication number: 20240150898Abstract: A substrate processing apparatus is provided. A substrate processing apparatus comprises a reaction chamber provided with a chamber wall comprising a first sidewall, a second sidewall disposed opposite to the first sidewall, a bottom wall connected to the first sidewall and the second sidewall; a gate valve tunnel disposed in the first sidewall configured to be closed by a gate valve; a substrate support provided with a top plate and a shaft, the substrate support being disposed within the reaction chamber and configured to support a substrate on the top plate, wherein the substrate support is configured to be vertically movable between a process position and a transfer position; and a liner disposed around perimeter of the substrate support and configured to move with the substrate support, wherein an outer wall of the liner is configured to cover the gate valve tunnel when the substrate support is in the process position.Type: ApplicationFiled: November 2, 2023Publication date: May 9, 2024Inventors: Yoshiyuki Kikuchi, Hirotsugu Sugiura, Alexey Remnev, Koei Aida, Lingjun Xue
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Publication number: 20240047198Abstract: Methods and systems of forming treated silicon-carbon material are disclosed. Exemplary methods include depositing silicon-carbon material onto a surface of the substrate and treating the silicon-carbon material. The step of treating can include a first treatment step followed by a second treatment step, wherein the first treatment step includes providing first reductant gas activated species and the second treatment step includes providing one or more of a first oxidant gas activated species and a second reductant gas activated species.Type: ApplicationFiled: July 27, 2023Publication date: February 8, 2024Inventors: Hirotsugu Sugiura, Yoshiyuki Kikuchi
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Publication number: 20240011151Abstract: A method for forming a carbon film on inner wall surfaces of a plurality of trenches which are formed on a substrate to be processed includes a depositing step of depositing the carbon film on the inner wall surfaces of the trenches of the substrate to be processed by supplying a mixed gas containing a carbon precursor gas and a carrier gas and applying a high frequency voltage to the mixed gas to generate plasma, an interval step of stopping the supply of the carbon precursor gas and the application of the high frequency voltage while continuing the supply of the carrier gas, and an etching step of etching a part of the carbon film by continuing to supply the carrier gas and applying a high frequency voltage to the carrier gas to generate plasma, wherein the above steps are repeated in the above order.Type: ApplicationFiled: July 3, 2023Publication date: January 11, 2024Inventors: Yoshio Susa, Hirotsugu Sugiura, Yoshiyuki Kikuchi
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Publication number: 20220336204Abstract: Methods and systems for forming a structure including multiple carbon layers and structures formed using the methods or systems are disclosed. Exemplary methods include forming a first carbon layer with an initial first flowability and a second carbon layer with an initial second flowability, wherein first flowability is less than second flowability.Type: ApplicationFiled: April 13, 2022Publication date: October 20, 2022Inventors: Ryo Miyama, Yoshio Susa, Yoshiyuki Kikuchi, Hirotsugu Sugiura
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Publication number: 20220251707Abstract: Methods and systems for forming a structure and structures formed using the methods or systems are disclosed. Exemplary methods include depositing material on a surface of the substrate and treating the deposited material to form treated material. The methods can be used to fill recesses on a surface of a substrate.Type: ApplicationFiled: February 2, 2022Publication date: August 11, 2022Inventors: Yoshio Susa, Hirotsugu Sugiura, Yoshiyuki Kikuchi
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Publication number: 20220042173Abstract: According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CH2 and a methyl group CH3 contained in the carbon hard mask satisfies the expression CH2/(CH2+CH3)?0.5.Type: ApplicationFiled: December 4, 2019Publication date: February 10, 2022Inventors: Masaru HORI, Makoto SEKINE, Hirotsugu SUGIURA, Tsuyoshi MORIYA, Satoshi TANAKA, Yoshinori MORISADA MORISADA
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Publication number: 20210320003Abstract: Methods and systems for forming a forming a nitrogen-containing carbon film and structures formed using the methods or systems are disclosed. Exemplary methods include providing a precursor with carbon-terminated carbon-nitrogen bonds. The methods can further include providing a reactant to the reaction chamber.Type: ApplicationFiled: April 8, 2021Publication date: October 14, 2021Inventors: Hirotsugu Sugiura, Yoshiyuki Kikuchi
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Publication number: 20210238742Abstract: Methods and systems for forming a structure including carbon material and structures formed using the method or system are disclosed. Exemplary methods include providing an inert gas to the reaction chamber for plasma ignition, providing a carbon precursor to the reaction chamber, forming a plasma within the reaction chamber to form an initially viscous carbon material on a surface of the substrate, wherein the initially viscous carbon material becomes carbon material, and treating the carbon material with activated species to form treated carbon material.Type: ApplicationFiled: February 3, 2021Publication date: August 5, 2021Inventors: Yoshio Susa, Ryo Miyama, Hirotsugu Sugiura, Yoshiyuki Kikuchi
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Publication number: 20210225642Abstract: Methods and systems for forming high aspect ratio features on a substrate are disclosed. Exemplary methods include forming a first carbon layer within a recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the methods or systems are also disclosed.Type: ApplicationFiled: January 13, 2021Publication date: July 22, 2021Inventors: Mitsuya Utsuno, Hirotsugu Sugiura, Yoshio Susa
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Patent number: 6774298Abstract: A thermoelectric module which includes case 1, heat-radiation side insulating substrate 4a, heat-absorption side insulating substrate 4b, first soldering layer 5a formed of a first soldering agent to connect the heat-radiation side insulating substrate 4a and the case 1, a plurality of P-type and N-type semiconductor chips interposed between the heat-radiation side insulating substrate 4a and the heat-absorption side insulating substrate 4b, the plurality of P-type and N-type semiconductor chips being arranged alternately, and a second soldering layer 15a (15b) formed of a second soldering agent to connect the heat-radiation side insulating substrate 4a and one end of each of the plural P-type and N-type semiconductor chips (the heat-absorption side insulating substrate 4b and the other end of each of the plural P-type and N-type semiconductor chips), the first soldering agent and the second soldering agent being identical in raw material.Type: GrantFiled: January 31, 2002Date of Patent: August 10, 2004Assignee: Aisin Seiki Kabushiki KaishaInventors: Hitoshi Tauchi, Masato Itakura, Hirotsugu Sugiura
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Patent number: 6770808Abstract: A thermoelectric module includes plural thermoelectric semiconductor chips connected in series, first and second substrates, plural first and second electrodes formed on the first and second substrates, first solder through which the first and second electrodes are bonded to end portions of the thermoelectric semiconductor chips. The first substrate includes two or more protrusions protruding toward opposite sides with respect to the second substrate when being viewed vertically. A method of assembling a thermoelectric module in a radiating member includes the steps of mounting the first substrate on a radiating member through the second solder having a liquidus temperature lower than a solidus temperature of the first solder; holding the protrusions by leading edges of support arms where the second solder is melted to push the first substrate toward the radiating member under pressure while rocking the first substrate in a direction orthogonal to the pushing direction.Type: GrantFiled: February 27, 2002Date of Patent: August 3, 2004Assignees: Aisin Seiki Kabushiki Kaisha, Oki Electric Industry Co., Ltd.Inventors: Masato Itakura, Hirotsugu Sugiura, Shunji Sakai
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Patent number: 6727423Abstract: A thermoelectric module includes a case, a insulating base plate for a exoergic side, a insulating base plate for endoergic side, a first soldering layer which joins the insulating base plate for the exoergic side to the case via a first soldering material, and a second soldering layer which joins P-type and N-type semiconductor tips to the insulating base plate for an exoenergic side and a insulating base plate for an endoergic side, using second soldering material. The melting point temperature of the first soldering material for the first soldering layer is higher than the melting point temperature of the second material for the second soldering layer.Type: GrantFiled: September 28, 2001Date of Patent: April 27, 2004Assignee: Aisin Seiki Kabushiki KaishaInventors: Hitoshi Tauchi, Masato Itakura, Hirotsugu Sugiura
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Patent number: 6524879Abstract: A method for producing a thermoelectric semiconductor includes an ingot production step for producing an ingot of a thermoelectric semiconductor and an integrating step for integrating a plurality of the ingots by plastic deforming the ingots to produce an integrated ingot of the thermoelectric semiconductor. The large size of the thermoelectric semiconductor ingot having uniform performance and mechanical strength can be produced by integration of two or more ingots. Therefore, many wafers can be produce at one time in the slicing step, and productivity is improved. Further, two or more ingots are integrated by plastic deformation so that the connecting strength of the connecting interface is strong.Type: GrantFiled: November 30, 2000Date of Patent: February 25, 2003Assignee: Aisin Seiki Kabushiki KaishaInventors: Hitoshi Tauchi, Satoru Hori, Hirotsugu Sugiura, Hiroyasu Kojima
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Publication number: 20030019216Abstract: A thermoelectric module includes a first board having a first electrode, a second board having a second electrode opposing the first electrode, and a plurality of thermoelectric chips made of thermoelectric material, each outer surface of the thermoelectric chips being plated with an Ni system plating layer.Type: ApplicationFiled: June 5, 2002Publication date: January 30, 2003Applicant: AISIN SEIKI KABUSHIKI KAISHAInventors: Masato Itakura, Toshihiro Inayoashi, Hirotsugu Sugiura
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Publication number: 20020157698Abstract: A thermoelectric module includes plural thermoelectric semiconductor chips connected in series, first and second substrates, plural first and second electrodes formed on the first and second substrates, first solder through which the first and second electrodes are bonded to end portions of the thermoelectric semiconductor chips. The first substrate includes two or more protrusions protruding toward opposite sides with respect to the second substrate when being viewed vertically. A method of assembling a thermoelectric module in a radiating member includes the steps of mounting the first substrate on a radiating member through the second solder having a liquidus temperature lower than a solidus temperature of the first solder; holding the protrusions by leading edges of support arms where the second solder is melted to push the first substrate toward the radiating member under pressure while rocking the first substrate in a direction orthogonal to the pushing direction.Type: ApplicationFiled: February 27, 2002Publication date: October 31, 2002Applicant: AISIN SEIKI KABUSHIKI KAISHAInventors: Masato Itakura, Hirotsugu Sugiura, Shunji Sakai
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Publication number: 20020149896Abstract: A thermoelectric module which includes a case 1, a heat-radiation side insulating substrate 4a, a heat-absorption side insulating substrate 4b, a first soldering layer 5a formed of a first soldering agent to connect the heat-radiation side insulating substrate 4a and the case 1, a plurality of P-type and N-type semiconductor chips interposed between the heat-radiation side insulating substrate 4a and the heat-absorption side insulating substrate 4b, the plurality of P-type and N-type semiconductor chips being arranged alternately, and a second soldering layer 15a (15b) formed of a second soldering agent to connect the heat-radiation side insulating substrate 4a and one end of each of the plural P-type and N-type semiconductor chips (the heat-absorption side insulating substrate 4b and the other end of each of the plural P-type and N-type semiconductor chips), the first soldering agent and the second soldering agent being identical in raw material.Type: ApplicationFiled: January 31, 2002Publication date: October 17, 2002Applicant: AISIN SEIKI KABUSHIKI KAISHAInventors: Hitoshi Tauchi, Masato Itakura, Hirotsugu Sugiura
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Patent number: 6452085Abstract: A thermoelectric device includes a thermoelectric element composed of principally thermoelectric material, a counter element adhered to the thermoelectric material. A solder layer lies between the thermoelectric element and the counter element and adheres the thermoelectric element to the counter element. A restraining layer prevents the solder ingredient of the solder layer from spreading into the thermoelectric element. The restraining layer is composed of a first layer to prevent the solder ingredient of the solder layer from spreading into the thermoelectric element and a second layer composed of material having a higher wetting property than the first layer with respect to the solder layer.Type: GrantFiled: January 17, 2001Date of Patent: September 17, 2002Assignee: Aisin Seiki Kabushiki KaishaInventors: Hitoshi Tauchi, Satoru Ogawa, Hirotsugu Sugiura, Noburo Ebina
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Publication number: 20020059951Abstract: A thermoelectric module includes a case, a insulating base plate for a exoergic side, a insulating base plate for endoergic side, a first soldering layer which joins the insulating base plate for the exoergic side to the case via a first soldering material, and a second soldering layer which joins P-type and N-type semiconductor tips to the insulating base plate for an exoenergic side and a insulating base plate for an endoergic side, using second soldering material. The melting point temperature of the first soldering material for the first soldering layer is higher than the melting point temperature of the second material for the second soldering layer.Type: ApplicationFiled: September 28, 2001Publication date: May 23, 2002Applicant: AISIN SEIKI KABUSHIKI KAISHAInventors: Hitoshi Tauchi, Masato Itakura, Hirotsugu Sugiura
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Publication number: 20010017151Abstract: The present invention is a thermoelectric device comprising: a thermoelectric element composed of principally thermoelectric material, a counter element adhered to said thermoelectric material, a solder layer lying between said thermoelectric element and said counter element and adhering said thermoelectric element to said counter element, a restraining layer to prevent said solder's ingredient of said solder layer from spreading into said thermoelectric element, wherein said restraining layer comprising a first layer to prevent said solder's ingredient of said solder layer from spreading into said thermoelectric element and a second layer composed of material which gets wetter than said first layer against said solder layer.Type: ApplicationFiled: January 17, 2001Publication date: August 30, 2001Applicant: AISIN SEIKI KABUSHIKI KAISHAInventors: Hitoshi Tauchi, Satoru Ogawa, Hirotsugu Sugiura, Noburo Ebina