Abstract: A method of adjusting heat uniformity on a wafer mounting surface of a wafer mount having a ceramic base including the wafer mounting surface which can heat a wafer through energization and a cooling plate includes: a) preparing the wafer mount including the cooling plate including: a base including a flow path of a coolant; and a lid detachable from the base; b) measuring a temperature distribution with the lid being attached on the base while heating through the energization and cooling; c) detaching the lid and locally adjusting a shape of the flow path when the temperature distribution does not satisfy a predetermined criterion; and d) remeasuring the temperature distribution after adjusting the shape of the flow path, with the lid being attached on the base while heating through the energization and cooling, wherein the steps c) and d) are repeated until the remeasured temperature distribution satisfies the criterion.

Abstract: A wafer placement table includes a ceramic base having a wafer placement surface; resistance heating elements buried in the ceramic base; jumper layers having a planar shape and provided in a different layer from the resistance heating elements; an inner via connecting the jumper layer and an end of the resistance heating element; and a feed via connected to the jumper layer, wherein each of the resistance heating elements is provided for each of zones of a surface parallel to the wafer placement surface, each of the jumper layers is provided for each of the resistance heating elements, and a center-to-center distance between the inner via and the feed via in each of the jumper layers is greater than or equal to 50 mm.

Abstract: A ceramic heater includes: a ceramic plate having a wafer placement surface on a surface thereof; zone heaters embedded in the ceramic plate so as to correspond to zones defined by dividing the surface of the ceramic plate into multiple sections; terminals connected to ends of the zone heaters via internal wires of the ceramic plate; terminal collection regions in which the plurality of terminals are collectively arranged; and non-terminal regions in which no terminal is arranged. The ceramic heater includes, as the zone heaters, a terminal-collection-region zone heater provided in a zone corresponding to the terminal collection regions, and a non-terminal regions zone heater provided in a zone corresponding to the non-terminal regions.

Abstract: A wafer placement table includes a ceramic substrate having a wafer placement surface; a first electrically conductive layer embedded in the ceramic substrate; and an electrically conductive via connected at one end to the first electrically conductive layer, wherein the electrically conductive via includes a plurality of columnar members connected together in a vertical direction, and wherein the area of the connection surface of one of two columnar members connected to each other is larger than the area of the connection surface of the other.

Abstract: A member for a semiconductor manufacturing apparatus includes an alumina electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing Si, SiC, and Ti. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al—Si—Mg or Al—Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.

Abstract: A member for a semiconductor manufacturing apparatus includes an AlN electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing SiC, Ti3SiC2, and TiC. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al—Si—Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.

Abstract: A member 10 for a semiconductor manufacturing apparatus includes an alumina electrostatic chuck 20, a cooling plate 30, and a cooling plate-chuck bonding layer 40. The cooling plate 30 includes first to third substrates 31 to 33, a first metal bonding layer 34 between the first and second substrates 31 and 32, a second metal bonding layer 35 between the second and third substrates 32 and 33, and a refrigerant path 36. The first to third substrates 31 to 33 are formed of a dense composite material containing Si, SiC, and Ti. The metal bonding layers 34 and 35 are formed by thermal compression bonding of the substrates 31 to 33 with an Al—Si—Mg or Al—Mg metal bonding material interposed between the first and second substrates 31 and 32 and between the second and third substrates 32 and 33.

Abstract: A member 10 for a semiconductor manufacturing apparatus includes an AlN electrostatic chuck 20, a cooling plate 30, and a cooling plate-chuck bonding layer 40. The cooling plate 30 includes first to third substrates 31 to 33, a first metal bonding layer 34 between the first and second substrates 31 and 32, a second metal bonding layer 35 between the second and third substrates 32 and 33, and a refrigerant path 36. The first to third substrates 31 to 33 are formed of a dense composite material containing SiC, Ti3 SiC2, and TiC. The metal bonding layers 34 and 35 axe formed by thermal compression bonding of the substrates 31 to 33 with an Al—Si—Mg metal bonding material interposed between the first and second substrates 31 and 32 and between the second and third substrates 32 and 33.

Abstract: To form an electrostatic chuck, a bonding sheet is applied onto the upper surface of a cooling plate and then the cooling plate is placed in a vacuum dryer at a pressure of 2,000 Pa or less for a pre-bake treatment at 120° C. to 130° C. for 15 to 40 hours, followed by natural cooling. A plate is then stacked on the bonding sheet so that the lower surface of the plate is aligned with the upper surface of the bonding sheet, which is applied onto the cooling plate. The resulting stacked body is placed in a heat-resistant resin bag, and is then placed in an autoclave and treated together for several hours under pressure and heat.

Abstract: To form an electrostatic chuck, a bonding sheet is applied onto the upper surface of a cooling plate and then the cooling plate is placed in a vacuum dryer at a pressure of 2,000 Pa or less for a pre-bake treatment at 120° C. to 130° C. for 15 to 40 hours, followed by natural cooling. A plate is then stacked on the bonding sheet so that the lower surface of the plate is aligned with the upper surface of the bonding sheet, which is applied onto the cooling plate. The resulting stacked body is placed in a heat-resistant resin bag, and is then placed in an autoclave and treated together for several hours under pressure and heat.

Abstract: A heating device includes an electrode embedded near the heating surface of the ceramic base substantially in parallel to the heating surface. In the rear surface of the ceramic base, a terminal hole extending toward the electrode is formed. Between the bottom surface of the terminal hole and electrode, a conductive ceramic member is embedded and connected to the electrode. The conductive ceramic member has a thermal expansion coefficient equal to that of the ceramic base. The electrode and terminal are electrically connected through the conductive ceramic member.

Abstract: A heating device includes an electrode embedded near the heating surface of the ceramic base substantially in parallel to the heating surface. In the rear surface of the ceramic base, a terminal hole extending toward the electrode is formed. Between the bottom surface of the terminal hole and electrode, a conductive ceramic member is embedded and connected to the electrode. The conductive ceramic member has a thermal expansion coefficient equal to that of the ceramic base. The electrode and terminal are electrically connected through the conductive ceramic member.

Abstract: An aluminum nitride sintered body containing carbon fibers is provided. This aluminum nitride sintered body is obtained by mixing carbon fibers and aluminum nitride together to form mixed powder, molding the mixed powder to form a compact, and heating and sintering the compact in any of a vacuum atmosphere, an inert atmosphere and a reductive atmosphere. By using electric conductivity and shapes with high aspect ratios of the carbon fibers, continuous electrically conductive paths are formed with a small content of the carbon fibers. In this way, a value of resistance of the aluminum nitride sintered body is reduced.

Abstract: An object of the present invention is to provide a ceramic chuck for mounting a wafer so that the number of particles adhered onto the wafer after chucking can be reduced while maintaining a desired Young's Modulus of the chuck. A ceramic chuck 1 has a surface layer 2 contacting a wafer “W” and a substrate portion 6. The surface layer 2 and substrate portion 6 are produced by co-sintering and the surface layer 2 has a porosity of 1% or higher and 10% or lower and larger than that of the substrate portion 6.

Abstract: An aluminum nitride sintered body containing carbon fibers is provided. This aluminum nitride sintered body is obtained by mixing carbon fibers and aluminum nitride together to form mixed powder, molding the mixed powder to form a compact, and heating and sintering the compact in any of a vacuum atmosphere, an inert atmosphere and a reductive atmosphere. By using electric conductivity and shapes with high aspect ratios of the carbon fibers, continuous electrically conductive paths are formed with a small content of the carbon fibers. In this way, a value of resistance of the aluminum nitride sintered body is reduced.