Abstract: A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.

Abstract: Provided is a production method for a water-absorbing resin in which an absorption capacity without pressure of the resulting water-absorbing resin is high and a water-absorbing resin can be efficiently obtained. The production method for a water-absorbing resin including a polymerization step of polymerizing a monomer composition containing an internal crosslinking agent and a monomer to obtain a crosslinked hydrogel polymer, and a drying step of drying the crosslinked hydrogel polymer to obtain a dry polymer, in which the crosslinked hydrogel polymer to be subjected to the drying step contains 50 ppm or more of hydrogen peroxide with respect to the solid content mass of the crosslinked hydrogel polymer, and the crosslinked hydrogel polymer is heated during the drying step so that a maximum reaching temperature of the crosslinked hydrogel polymer exceeds 160° C., and/or the dry polymer is heated after the drying step so that a maximum reaching temperature of the dry polymer exceeds 160° C.

Abstract: A semiconductor memory device includes a stacked body in which a first insulating layer and a first conductive layer are alternately stacked in a first direction. A columnar body includes a first insulating portion extending in the first direction in the stacked body, a first semiconductor portion provided between the first insulating portion and the stacked body, and a third insulating portion provided between a second insulating portion provided between the first semiconductor portion and the stacked body, and the second insulating portion and the stacked body, and has a first end and a second end opposite to the first end. A second conductive layer is provided on the stacked body and is electrically connected to the first semiconductor portion at the first end of the columnar body.

Abstract: According to one embodiment, a semiconductor storage device includes a substrate; a stacked body provided above the substrate, wherein the stacked body includes a plurality of first insulating layers and a plurality of conductive layers that are alternately stacked on top of one another along a vertical direction; a plurality of columnar portions that penetrate the stacked body; a first slit, provided in the vertical direction, that divides one or more of the plurality of conductive layers at least at an upper portion of the stacked body; and a second insulating layer that overlays an opening of the first slit, which forms a cavity.

Abstract: A film antenna receives a wireless signal transmitted by radio, a relay unit relays the received wireless signal to a television receiver, an LED indicator emits light based on a control signal transmitted from the television receiver, a storage case stores the film antenna, the relay unit and a light emitting unit, and a connection member connects the storage case to the television receiver. In addition, in a state of being connected to the television receiver, in a normal direction to a housing surface having a display unit on a housing of the television receiver, the storage case has a protruding section which further protrudes from the housing surface and stores the film antenna in the protruding section. For example, this disclosure can be applied to a receiving device having a receiving unit which receives the wireless signal.

Abstract: This disclosure relates to a connection device that can provide a new function for an electronic device. A film antenna receives a wireless signal transmitted by radio, a relay unit relays the received wireless signal to a television receiver, an LED indicator emits light based on a control signal transmitted from the television receiver, a storage case stores the film antenna, the relay unit and a light emitting unit, and a connection member connects the storage case to the television receiver. In addition, in a state of being connected to the television receiver, in a normal direction to a housing surface having a display unit on a housing of the television receiver, the storage case has a protruding section which further protrudes from the housing surface and stores the film antenna in the protruding section. For example, this disclosure can be applied to a receiving device having a receiving unit which receives the wireless signal.

Abstract: An electric storage system is provided including a switching unit which is arranged between an electric storage unit of an electric storage device which is configured to be connectable in parallel with another power supply device and wire which is configured to electrically connect the electric storage device and the another power supply device, wherein the switching unit is configured to switch the electrical connection relationship between the wire and the electric storage unit; and a restriction unit which is connected in parallel with the switching unit between the wire and the electric storage unit, has a higher resistance than the switching unit, and is configured to cause current to flow in a direction from the electric storage unit to the wire and suppress current flowing in a direction from the wire to the electric storage unit.

Abstract: A semiconductor memory device includes a substrate, a plurality of first conductive layers and a plurality of first insulating layers alternately arranged in a first direction intersecting the substrate, a first semiconductor layer extending in the first direction and facing the first semiconductor layers and the first insulating layers, a first charge storage layer disposed between the first conductive layers and the first semiconductor layer, and a second semiconductor layer connected to one end of the first semiconductor layer in the first direction. The first insulating layers at least partially contains a first element. The first element is at least one of phosphorus (P), arsenic (As), carbon (C), and argon (Ar).

Abstract: To enable guidance to be given more understandably, depending on the guidance location. Provision of an image recognizing unit for analyzing the state of a guidance object that serves as a landmark for a guidance location, through image recognition using an image captured for the direction forward of a vehicle; a guidance information generating unit for generating guidance information that includes a supplementary explanation regarding the state of the guidance object, depending on the result of the analysis; and an output processing unit for outputting the guidance information.

Abstract: This shock absorber includes a piston main body and a piston band. The piston main body has, at an outer peripheral portion thereof, a stepped portion including a large-diameter surface portion, a stepped surface portion and a small-diameter surface portion. The piston band has, at an outer peripheral portion thereof, a large diameter portion, a medium diameter portion formed so as to have a smaller diameter than the large diameter portion, and a small diameter portion formed between the large diameter portion and the medium diameter portion so as to have a smaller diameter than the medium diameter portion, in a state before being disposed in a cylinder. At one end on the side close to a tip portion of a piston rod, an inner peripheral surface is inclined toward the piston main body side from the large-diameter surface portion to a small-diameter surface portion of the stepped portion.

Abstract: The present disclosure provides alternative voice guidance in conformity with a current situation at a guidance point. A navigation device includes an image analysis unit configured to analyze an image in which a front of a vehicle is captured, a storage unit configured to store map information, a route search unit configured to search for a route to a target place set by a user, based on the map information to generate a recommended route, a voice guidance unit configured to provide, by voice or sound, guidance to a guidance point on the generated recommended route, and an input reception unit configured to receive a request for alternative voice guidance from the user, wherein when the input reception unit receives the request for alternative voice guidance, the voice guidance unit generates voice guidance for notifying the user of the guidance point, based on an analysis result of the image.

Abstract: A wireless communication device includes a base material; a directivity control array and a wiring disposed on the base material, the directivity control array having a plurality of unit elements disposed in a certain two-dimensional pattern, and the wiring connected to a DC power supply to apply a DC voltage to desired unit elements; the wireless communication device further comprising a controller to control the DC voltage to be applied to the desired unit elements.

Abstract: According to one embodiment, a semiconductor storage device includes: a substrate; a plurality of first gate electrodes arranged in a first direction intersecting with a substrate surface; a first semiconductor film extending in the first direction and facing the plurality of first gate electrodes; a first gate insulating film provided between the plurality of first gate electrodes and the first semiconductor film; a second gate electrode disposed farther away from the substrate than the plurality of first gate electrodes; a second semiconductor film that extends in the first direction, faces the second gate electrode, and has, in the first direction, one end connected to the first semiconductor film; and a second gate insulating film provided between the second gate electrode and the second semiconductor film. The second gate electrode includes: a first portion; and a second portion provided between the first portion and the second semiconductor film, and facing the second semiconductor film.

Abstract: According to one embodiment, a semiconductor storage device includes a substrate; a stacked body provided above the substrate, wherein the stacked body includes a plurality of first insulating layers and a plurality of conductive layers that are alternately stacked on top of one another along a vertical direction; a plurality of columnar portions that penetrate the stacked body; a first slit, provided in the vertical direction, that divides one or more of the plurality of conductive layers at least at an upper portion of the stacked body; and a second insulating layer that overlays an opening of the first slit, which forms a cavity.

Abstract: On an outer circumferential portion of a piston band, in a natural state before being disposed in a cylinder, a large diameter part is formed on a side close to a distal end portion of a piston rod or on a side far from the distal end portion, a medium diameter part having a diameter smaller than that of the large diameter part is formed on a side far from the distal end portion or on a side close to the distal end portion, and a small diameter part having a diameter smaller than that of the medium diameter part is formed between the large diameter part and the medium diameter part.

Abstract: According to one embodiment, a semiconductor device includes a substrate, a stack comprising a plurality of conductive layers stacked one over the other in a first direction, and an insulating layer interposed between adjacent conductive layers located over the substrate, a first semiconductor layer extending inwardly of the stack and through the plurality of conductive layers in the first direction, a memory layer located between the first semiconductor layer and the plurality of conductive layers, and a second semiconductor layer located over, and in contact with, the first semiconductor layer, wherein the second semiconductor layer includes a third semiconductor layer containing phosphorous, and a fourth semiconductor layer containing carbon provided between the first semiconductor layer and the third semiconductor layer.

Abstract: An electric storage system is provided including a switching unit which is arranged between an electric storage unit of an electric storage device which is configured to be connectable in parallel with another power supply device and wire which is configured to electrically connect the electric storage device and the another power supply device, wherein the switching unit is configured to switch the electrical connection relationship between the wire and the electric storage unit; and a restriction unit which is connected in parallel with the switching unit between the wire and the electric storage unit, has a higher resistance than the switching unit, and is configured to cause current to flow in a direction from the electric storage unit to the wire and suppress current flowing in a direction from the wire to the electric storage unit.

Abstract: A semiconductor memory device according to an embodiment includes a substrate, a first conductive layer provided across a first region and a second region of the substrate, a second conductive layer disposed above the first conductive layer to be away from the first conductive layer, the second conductive layer being provided across the first region and the second region, a pillar passing through the first conductive layer and the second conductive layer in a first direction in the second region, the pillar including a semiconductor film, a charge storage film provided between the semiconductor film and the first conductive layer and between the semiconductor film and the second conductive layer, a first insulating layer provided between the first conductive layer and the second conductive layer in the first region, the first insulating layer containing a first insulating material, the first insulating material being silicon oxide, a second insulating layer provided between the first conductive layer and the

Abstract: According to one embodiment, a semiconductor storage device includes: a substrate; a plurality of first gate electrodes arranged in a first direction intersecting with a substrate surface; a first semiconductor film extending in the first direction and facing the plurality of first gate electrodes; a first gate insulating film provided between the plurality of first gate electrodes and the first semiconductor film; a second gate electrode disposed farther away from the substrate than the plurality of first gate electrodes; a second semiconductor film that extends in the first direction, faces the second gate electrode, and has, in the first direction, one end connected to the first semiconductor film; and a second gate insulating film provided between the second gate electrode and the second semiconductor film. The second gate electrode includes: a first portion; and a second portion provided between the first portion and the second semiconductor film, and facing the second semiconductor film.

Abstract: A semiconductor storage device includes a substrate, a plurality of first gate electrodes on the substrate and arranged in a thickness direction of the substrate, and a first semiconductor pillar extending in the thickness direction of the substrate through the plurality of first gate electrodes, the first semiconductor pillar including a first portion facing the plurality of first gate electrodes and a second portion farther from the substrate than the first portion. The semiconductor storage device also includes a second gate electrode on the substrate farther from the substrate than the plurality of first gate electrodes, and a second semiconductor pillar extending in the thickness direction of the substrate through the second gate electrode, and connected to the first semiconductor pillar at the second portion of the first semiconductor pillar. The second portion of the first semiconductor pillar contains carbon (C).