Abstract: An object of the present invention is to provide an enhancing agent for effect of anticancer agent for achieving an excellent therapeutic effect on cancer. The enhancing agent for effect of anticancer agent according to the present invention which is a solving means therefor is characterized in that a nitric oxide donor is an effective ingredient. In accordance with the present invention, an excellent therapeutic effect is able to be achieved on non-small cell lung cancer which is still in such a state that no effective therapeutic method has been established yet for a progressive cancer which is not operable and is one of cancers where chemotherapy is most difficult to apply.

Abstract: An object of the present invention is to provide an enhancing agent for effect of anticancer agent for achieving an excellent therapeutic effect on cancer. The enhancing agent for effect of anticancer agent according to the present invention which is a solving means therefor is characterized in that a nitric oxide donor is an effective ingredient. In accordance with the present invention, an excellent therapeutic effect is able to be achieved on non-small cell lung cancer which is still in such a state that no effective therapeutic method has been established yet for a progressive cancer which is not operable and is one of cancers where chemotherapy is most difficult to apply.

Abstract: An object of the present invention is to provide an enhancing agent for effect of anticancer agent for achieving an excellent therapeutic effect on cancer. The enhancing agent for effect of anticancer agent according to the present invention which is a solving means therefor is characterized in that a nitric oxide donor is an effective ingredient. In accordance with the present invention, an excellent therapeutic effect is able to be achieved on non-small cell lung cancer which is still in such a state that no effective therapeutic method has been established yet for a progressive cancer which is not operable and is one of cancers where chemotherapy is most difficult to apply.

Abstract: A semiconductor device and a method of fabricating such a semiconductor device in which a silicon nitride film constituting a protective film for ion implantation is used for improving the device structure in order that conversion of a metal film into a silicide for reducing the resistance of a shallow-junction diffused layer may not be prevented by the knock-on phenomenon of oxygen, thereby reduce the fabrication cost. A silicon nitride film, which is used as a protective film for ion implantation into a substrate and a gate polysilicon, is processed into side walls of the gate polysilicon thereby to omit the step of forming side walls by a silicon oxide film. Further, in the case where boron is diffused into the gate polysilicon, boron diffusion is suppressed by nitrogen knock-on, thereby preventing boron from going through the gate oxide film.

Abstract: A semiconductor device and a method of fabricating such a semiconductor device in which a silicon nitride film constituting a protective film for ion implantation is used for improving the device structure in order that conversion of a metal film into a silicide for reducing the resistance of a shallow-junction diffused layer may not be prevented by the knock-on phenomenon of oxygen, thereby reduce the fabrication cost. A silicon nitride film, which is used as a protective film for ion implantation into a substrate and a gate polysilicon, is processed into side walls of the gate polysilicon thereby to omit the step of forming side walls by a silicon oxide film. Further, in the case where boron is diffused into the gate polysilicon, boron diffusion is suppressed by nitrogen knock-on, thereby preventing boron from going through the gate oxide film.