Abstract: Embodiments of present invention provide a method of forming a resistive random-access memory (RRAM). The method includes forming a dielectric layer on top of a supporting structure, wherein the dielectric layer has a bottom electrode embedded therein; forming an oxide layer on top of the bottom electrode; treating the oxide layer in a plasma environment; forming a top electrode on top of the oxide layer; forming a first interlevel-dielectric (ILD) layer on top of the top electrode; forming a via contact and a first metal layer in the first ILD layer, wherein the first metal layer is in contact with the top electrode through the via contact; forming a capping layer on top of the first metal layer through a plasma-enhanced deposition process; and causing formation of one or more filaments in the oxide layer during the plasma-enhanced deposition process. A structure of the RRAM is also provided.

Abstract: An information processing apparatus disclosed has a controller configured to execute the processing of accepting a request for retrieving a target vehicle body unit that is laid at a specific place, selecting a chassis unit for retrieval from among chassis units in the state separated from any vehicle body unit, the chassis unit for retrieval being a chassis unit to be used to retrieve the target vehicle body unit, and sending a retrieval command to the chassis unit for retrieval, the retrieval command being a command to retrieve the target vehicle body unit.

Abstract: The present invention provides a water-containing foam-containing chocolate containing 16 wt % or more and 55 wt % or less of water, the water-containing foam-containing chocolate having new texture that is smooth, fluffy, and soft even in a freezing temperature range and having processability at room temperature and an excellent shape retention property at room temperature and in the freezing temperature range.

Abstract: A motor includes: a central shaft; a stator extending in an axial direction around the central shaft; a rotor facing an outer side in a radial direction of the stator and configured to rotate around the central shaft; a substrate located on one side in the axial direction with respect to the rotor and on which a rotation position detection circuit detecting a rotation position of the rotor is mounted; and a case located on one side in the axial direction with respect to the substrate and supporting the stator. The stator includes a restricting portion restricting a position in a circumferential direction of the substrate. The case includes a fixing portion fixing the substrate. The substrate includes a restricted portion whose position in the circumferential direction is restricted by the restricting portion, and a fixed portion fixed to the fixing portion.

Abstract: Structures and methods are provided for integrating a resistance random access memory (ReRAM) in a back-end-on-the-line (BEOL) fat wire level. In one embodiment, a ReRAM device area contact structure is provided in the BEOL fat wire level that has at least a lower via portion that contacts a surface of a top electrode of a ReRAM device area ReRAM-containing stack. In other embodiments, a tall ReRAM device area bottom electrode is provided in the BEOL fat wire level and embedded in a dielectric material stack that includes a dielectric capping layer and an interlayer dielectric material layer.

Abstract: Provided is a structure for individual authentication in which a pillar pattern region including a plurality of nanopillars formed of synthetic quartz glass is formed on at least a part of a surface portion of a synthetic quartz glass substrate. In the pillar pattern region, the nanopillars have an indentation elastic modulus of 35 to 100 GPa as measured by a nanoindentation method, and the nanopillars are plastically deformed.

Abstract: It is possible to estimate a slack level accurately in consideration of a shape of a deformed cable. A point cloud analysis device sets a plurality of regions of interest obtained by window-searching a wire model including a quadratic curve model representing a cable obtained from a point cloud consisting of three-dimensional points on an object, the region of interest being divided into a first region and a second region.

Abstract: A semiconductor device includes a ferroelectric random-access memory (FeRAM) cell. The FeRAM includes a ferroelectric dielectric that is annealed to attain its ferroelectric phase by an induced current flow and heating process. The current flow may be induced though a temporary wire that causes heating of the FeRAM cell. The resulting heating or anneal of the ferroelectric dielectric may crystalize the ferroelectric dielectric to embody or result in having ferroelectric properties. The induced current flow and heating process is substantially local to the FeRAM cell, and to ferroelectric dielectric therein, as opposed to a global heating or annealing process in which the entire semiconductor device, or a relatively larger region of semiconductor device, is heated to the requisite annealing temperature of ferroelectric dielectric.

Abstract: A porous thin film includes a framework that includes a plurality of pores. The pores extend from an opening located at an upper surface of the framework to a bottom surface contained in the framework. A pore-coating film is formed on sidewalls and the bottom surface of the pores.

Abstract: Provided is a semiconductor element including at least, a semiconductor layer including a crystalline oxide semiconductor as a major component; an electrode layer laminated on the semiconductor layer; and a conductive substrate laminated on the electrode layer directly or with another layer in between, the conductive substrate containing at least a first metal selected from the metals in group 11 in the periodic table and a second metal different from the first metal in coefficient of liner thermal expansion.

Abstract: Provided is a crystalline oxide film including: a plane tilted from a c-plane as a principal plane; gallium; and a metal in Group 9 of the periodic table, the metal in Group 9 of the periodic table among all metallic elements in the film having an atomic ratio of equal to or less than 23%.

Abstract: A vehicle includes a regenerative generator on a front wheel. A braking control device includes an actuator that applies a front wheel torque and a rear wheel torque, and a controller that individually adjusts the front wheel torque and the rear wheel torque. The controller is configured to determine the front wheel torque and the rear wheel torque to zero when a regenerative braking force Fg generated by the regenerative generator has not reached a maximum regenerative force Fx which is a generatable maximum value. On the other hand, the controller is configured to increase the rear wheel torque from zero before increasing the front wheel torque from zero when the regenerative braking force Fg reaches the maximum regenerative force Fx.

Abstract: Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a plurality of resistance elements connected respectively to the PN junction diodes in parallel and connected to each other in series; and a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel.

Abstract: Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel; and a die pad on which at least one of the PN junction diodes and the Schottky barrier diode are mounted commonly.

Abstract: Provided is a powder inorganic oxide containing Al, Ce and Zr as constituent elements, that affords a molded product with a density of 1.0 to 1.3 g/ml by placing 4.0 g of the inorganic oxide in a cylindrical container having diameter 20 mm and performing uniaxial molding under conditions of room temperature and pressure of 29.4 MPa for 30 sec., and achieves an average shrinkage percentage of not more than 14.0% as calculated by the following formula: average shrinkage percentage (%)=100×{(1?(c)/(a))+(1?(d)/(b))}/2 wherein each symbol is as defined in the DESCRIPTION.

Abstract: Provided is alumina material comprising alumina and zirconium, wherein in a radial distribution function obtained by Fourier-transforming an extended X-ray absorption fine structure (EXAFS) spectrum of a K absorption edge of the zirconium in the alumina material, the value of IB/IA is 0.5 or less where IA is a maximum intensity among the intensities of peaks present at 0.1 nm to 0.2 nm, and IB is a maximum intensity among the intensities of peaks present at 0.28 nm to 0.35 nm.