Abstract: Provided with a glass composition including a network-former oxide composed of any one of or both of B2O3 and V2O5 of 20-80% by weight, ZnO of 0-60% by weight and BaO of 0-80% by weight, wherein at least one of ZnO and BaO is included as an essential ingredient. The present invention is a glass material for use in sealing, which is of lead-free series, can be used for sealing at a low processing temperature and within a wide temperature range, has a low thermal expansion coefficient, superior adhesion, superior sealing processability, superior adherence, superior chemical stability, superior strength and the like and comprises sufficient practical performance to substitute for lead glass.

Abstract: In a method of manufacturing a nonvolatile semiconductor storage device, an element isolation region is formed in a semiconductor substrate, a tunnel oxide film and a polysilicon layer are successively formed on the semiconductor substrate, and nitrogen ions are thereafter implanted into the front surface of the polysilicon layer so as to stay in the front surface only. The polysilicon layer is patterned to form a floating gate, which is then thermally oxidized to form an inter-gate insulating film. Since thermal oxidation is suppressed by nitrogen ions, the inter-gate insulating film is thicker at the side surfaces of the floating gate than at the front surface. The inter-gate insulating film at the edge of the floating gate can be formed as designed, so that the storage device is free from bad influence during electrical programming and erasing, and can retain charge longer.

Abstract: Provided with a glass composition including a network-former oxide composed of any one of or both of B2O3 and V2O5 of 20-80% by weight, ZnO of 0-60% by weight and BaO of 0-80% by weight, wherein at least one of ZnO and BaO is included as an essential ingredient. The present invention is a glass material for use in sealing, which is of lead-free series, can be used for sealing at a low processing temperature and within a wide temperature range, has a low thermal expansion coefficient, superior adhesion, superior sealing processability, superior adherence, superior chemical stability, superior strength and the like and comprises sufficient practical performance to substitute for lead glass.

Abstract: Provided with a glass composition including a network-former oxide composed of any one of or both of B2O3 and V2O5 of 20-80% by weight, ZnO of 0-60% by weight and BaO of 0-80% by weight, wherein at least one of ZnO and BaO is included as an essential ingredient. The present invention is a glass material for use in sealing, which is of lead-free series, can be used for sealing at a low processing temperature and within a wide temperature range, has a low thermal expansion coefficient, superior adhesion, superior sealing processability, superior adherence, superior chemical stability, superior strength and the like and comprises sufficient practical performance to substitute for lead glass.

Abstract: An inspection pattern, an inspection method, and an inspection system for detection of a latent defect of a multi-layer wiring structure formed on the semiconductor wafer. The inspection pattern includes lower-layer wiring portions, upper-layer wiring portions, an insulating layer provided between them, contact units connecting them to form a contact chain, and electrode terminals. The inspection method includes the steps of acquiring an applied-voltage versus measured-current characteristic or an elapsed-time versus measured-voltage characteristic of the inspection pattern, and judging presence or absence of a latent defect of the inspection pattern on the basis of the acquired characteristic. The inspection system includes a voltage-applying/current-measuring device or a constant-current-feeding/voltage-measuring device, and a judging device for judging presence or absence of a latent defect of the inspection pattern.

Abstract: Provided with a glass composition including a network-former oxide composed of any one of or both of B2O3 and V2O5 of 20-80% by weight, ZnO of 0-60% by weight and BaO of 0-80% by weight, wherein at least one of ZnO and BaO is included as an essential ingredient. The present invention is a glass material for use in sealing, which is of lead-free series, can be used for sealing at a low processing temperature and within a wide temperature range, has a low thermal expansion coefficient, superior adhesion, superior sealing processability, superior adherence, superior chemical stability, superior strength and the like and comprises sufficient practical performance to substitute for lead glass.

Abstract: An inspection pattern, an inspection method, and an inspection system for detection of a latent defect of a multi-layer wiring structure formed on the semiconductor wafer. The inspection pattern includes lower-layer wiring portions, upper-layer wiring portions, an insulating layer provided between them, contact units connecting them to form a contact chain, and electrode terminals. The inspection method includes the steps of acquiring an applied-voltage versus measured-current characteristic or an elapsed-time versus measured-voltage characteristic of the inspection pattern, and judging presence or absence of a latent defect of the inspection pattern on the basis of the acquired characteristic. The inspection system includes a voltage-applying/current-measuring device or a constant-current-feeding/voltage-measuring device, and a judging device for judging presence or absence of a latent defect of the inspection pattern.

Abstract: In a method of manufacturing a nonvolatile semiconductor storage device, an element isolation region (12 in FIG. 1) is formed in a semiconductor substrate (11), a tunnel oxide film (13) and a polysilicon layer to become a floating gate (14) later are successively formed on the resulting semiconductor substrate, and nitrogen ions are thereafter implanted into the front surface of the polysilicon layer so as to stay in only this front surface. The polysilicon layer is patterned to form the floating gate (14), and this floating gate (14) is thermally oxidized to form an inter-gate insulating film (15). Since the thermal oxidation is suppressed by the nitrogen ions, the inter-gate insulating film (15) can be made thicker at the side surfaces of the floating gate (14) than at the front surface thereof.

Abstract: An inspection pattern, an inspection method, and an inspection system for detection of a latent defect of a multi-layer wiring structure formed on the semiconductor wafer. The inspection pattern includes lower-layer wiring portions, upper-layer wiring portions, an insulating layer provided between them, contact units connecting them to form a contact chain, and electrode terminals. The inspection method includes the steps of acquiring an applied-voltage versus measured-current characteristic or an elapsed-time versus measured-voltage characteristic of the inspection pattern, and judging presence or absence of a latent defect of the inspection pattern on the basis of the acquired characteristic. The inspection system includes a voltage-applying/current-measuring device or a constant-current-feeding/voltage-measuring device, and a judging device for judging presence or absence of a latent defect of the inspection pattern.

Abstract: Conventional methods of retrieving a transport schedule aim merely at retrieval. Users tend to forget utilizing any such method. According to the present invention, a transport schedule registered at a user terminal is referenced. When it is judged that a notification concerning the schedule should be transmitted, the notification is transmitted to a contact address registered at the user terminal. The registered transport schedule presents a moving time required for a user to reach a point of departure of an initially utilized transport. The notification concerning the schedule is transmitted based on a user departure time instant that is earlier than the departure time instant of the initially utilized transport by the moving time.

Abstract: An inspection pattern, an inspection method, and an inspection system for detection of a latent defect of a multi-layer wiring structure formed on the semiconductor wafer. The inspection pattern includes lower-layer wiring portions, upper-layer wiring portions, an insulating layer provided between them, contact units connecting them to form a contact chain, and electrode terminals. The inspection method includes the steps of acquiring an applied-voltage versus measured-current characteristic or an elapsed-time versus measured-voltage characteristic of the inspection pattern, and judging presence or absence of a latent defect of the inspection pattern on the basis of the acquired characteristic. The inspection system includes a voltage-applying/current-measuring device or a constant-current-feeding/voltage-measuring device, and a judging device for judging presence or absence of a latent defect of the inspection pattern.

Abstract: By using a small heat accumulator installed in a cooling water system, malfunction of exhaust emission during warming up is prevented. Such a cooling system includes a cooling water passage for returning cooling water flowing from a cooling water outlet of an automotive engine to a cooling water inlet through a radiator, a first bypass passage for returning the cooling water just after flowing from the cooling water outlet to the cooling water inlet through the radiator, a second bypass passage for returning the cooling water just after flowing out from the cooling water outlet of the engine to the cooling water inlet through the radiator by supplying the cooling water near a heat-sensing portion of a thermostat, a flowing amount adjusting valve for enlarging a cooling water flowing ratio to the first bypass passage with respect to the second bypass passage corresponding to a reduction of a load of the engine and the heat accumulator installed through the first bypass passage.

Abstract: According to the present invention, the cooling apparatus is equipped with a thermostat for opening or closing a water passage between a radiator and a water-cooled engine and a cooling water passage switching valve for switching a water introducing passage for introducing the cooling water around a thermosensitive member of the thermostat. When the engine is in a high-load operating condition and when the temperature of the cooling water is equal to or higher than a predetermined temperature, the cooling water immediately after having flowed out of the water-cooled engine flows into around the thermosensitive member of the thermostat by the operation of the cooling water passage switching valve. As a result, the thermostat is operated in response to the temperature of the high temperature cooling water having flowed out of the water-cooled engine, and the set temperature of the cooling water by the thermostat can be shifted to a lower temperature.

Abstract: A cooling apparatus for cooling an internal combustion engine having a coolant passing through the engine is provided. A heat exchanger performs a heat-energy exchange and a heat exchanger bypass passage prevents part of the coolant flowing out from the engine from flowing into the heat exchanger. A coolant combination device forms a mix of coolant which flows in a passage bypassing a thermostat with coolant which flows in a passage through the thermostat, while a flow rate ratio adjusting valve continuously adjusts the ratio of the flow rate of the part of the coolant which bypasses the thermostat to the part of the coolant which passes through the thermostat in accordance with a temperature of the coolant. Accordingly, the higher the temperature is, the larger the ratio is. Moreover, the temperature is controlled in accordance with a load of the engine so that the larger the load is, the higher the temperature is.

Abstract: A cooling system for a water cooled internal combustion engine for a vehicle includes an engine body having a water jacket therein. The system comprises a radiator and a pump chamber. The pump chamber is in communication with the water jacket. A water pump creates a flow of water into the water jacket. A first main conduit has an end connected to the water jacket at the engine outlet and another end connected to the radiator. A second main conduit has an end connected to the radiator and another end connected to the pump chamber. A reservoir tank is arranged at a position more elevated than the radiator, and a supplementation conduit connects a bottom portion of the reservoir tank with an upper part of the pump chamber. A thermostat valve is arranged between the second main conduit and the pump chamber at a position upstream from a location where the supplementation conduit is connected to the pump chamber.

Abstract: A semiconductor device having a field insulating film which comprises a semiconductor substrate having an active region and a field region, a first oxide film formed on a surface of the substrate within the field region and etched on an upper surface of the first oxide film, an amorphous silicon layer formed on the surface of the first oxide film by ion implantation, and a second oxide film formed on the amorphous silicon layer whereby a field insulating film has a three-layered structure consisting of the first oxide film, the amorphous silicon layer and the second oxide film. A method for manufacturing the semiconductor device is also described.