Abstract: A water- and oil-proofing composition stable under highly alkaline conditions is provided. A water- and oil-proofing composition comprising a fluorinated polymer and an aqueous medium, wherein the fluorinated polymer comprises units based on a monomer a and units based on a monomer b. Monomer a: a compound represented by CH2?CH—Rf (wherein Rf is a C1-8 perfluoroalkyl group). Monomer b: a compound having a polymerizable unsaturated group and a cationic group.

Abstract: The wet friction member 1 of the invention includes a core plate 2 formed in a flat ring shape, a friction part 3 arranged in a ring shape. The friction part 3 has segment pieces including rectangular shaped G1 to G4: G1 in which a lower right corner of rectangular piece is notched; G2 in which an upper left corner of rectangular piece is notched; G3 in which an upper right corner of rectangular piece is notched; G4 in which a lower left corner of rectangular piece is notched. The friction part 3 has arrangements T1 and T2: T1 in which G1 and G2 are arranged in a manner a right side of G1 and a left side of G2 face each other; T2 in which G3 and G4 are arranged in a manner a right side of the G3 and a left side of G4 face each other.

Abstract: A water/oil repellent composition which can provide an article with high and durable water repellency is provided. A water/oil repellent composition comprising units based on a fluoroolefin represented by the formula (1): CH2?CH—Rf (wherein Rf is a C1-8 perfluoroalkyl group), units based on a vinyl carboxylate (b1) having a C12 or higher alkyl group and units based on a vinyl carboxylate (b2) having a C1-6 alkyl group, wherein the ratio of units based on the fluoroolefin is from 20 to 35 mol %, the ratio of units based on the vinyl carboxylate (b1) is from 30 to 70 mol %, and the ratio of units based on the vinyl carboxylate (b2) is from 5 to 50 mol %, relative to all the units in the fluorinated polymer.

Abstract: A water/oil repellent composition which can provide an article with high and durable water repellency is provided.

Abstract: Provided is a semiconductor storage device including: a substrate having a substrate surface extending in a first direction and a second direction intersecting the first direction; a plurality of first region memory cells provided in a plurality of layers provided parallel to the substrate surface and in a third direction, the first region memory cells being provided above a rectangular shaped first region provided on the substrate surface, the first region having a first side parallel to the first direction and a second side parallel to the second direction when viewed from the third direction intersecting the first direction and the second direction; a plurality of first region wirings provided between the first region memory cells; a plurality of second region memory cells provided in the layers, the second region memory cells being provided above a rectangular shaped second region having a third side parallel to the first direction and a fourth side parallel to the second direction when viewed from the th

Abstract: A semiconductor storage device includes lower and upper bit lines, word lines between the bit lines, and memory cells between the bit lines and the word lines. The memory cells are divided into logical slices and a memory cell from each logical slice is selected when carrying out a read or write operation. A first logical slice includes memory cells, each of which is between one of two bit lines and one of three word lines that are adjacent to each other. The two bit lines include one lower bit line and one upper bit line. A second logical slice includes memory cells, each of which is between one of three bit lines and one of three word lines that are not adjacent to each other. The three bit lines include one lower bit line and two upper bit lines.

Abstract: It is difficult for a Cr—Si-based sintered body composed of chromium silicide (CrSi2) and silicon (Si) to have high strength. Provided is a Cr—Si-based sintered body including Cr (chromium) and silicon (Si), in which the crystal structure attributed by X-ray diffraction is composed of chromium silicide (CrSi2) and silicon (Si), a CrSi2 phase is present at 60 wt % or more in a bulk, a density of the sintered body is 95% or more, and an average grain size of the CrSi2 phase is 60 ?m or less.

Abstract: To provide a polymer which can provide a water- and oil-proof paper with excellent water and oil resistance. A polymer comprising the following units a, and at least the following units b among the following units b and the following units c, wherein the ratio of units a to all the units in the polymer is from 28 to 70 mol %, the total ratio of units b and units c to all the units in the polymer is from 30 to 72 mol %, and the ratio of units b to the sum of units b and units c is at least 45 mol %: units a: units represented by —(CH2—CHRf)— (wherein Rf is a C1-s perfluoroalkyl group), units b: units represented by —(CH2—CH(OH))—, units c: units represented by —(CH2—CH(OC(?O)R))— (wherein R is a C1-4 alkyl group).

Abstract: A semiconductor memory device includes first and second wirings extending in a first direction and spaced apart from each other in the first direction, third wirings above the first and second wirings and extending in a second direction, fourth and fifth wirings above the third wirings, extending in the first direction, and spaced apart from each other in the second direction, a plurality of memory cells between each third wiring and each of first, second, fourth, and fifth wirings, voltage application circuits, connection conductors between the voltage application circuits and the wirings, and connection wirings that electrically connect the fourth and fifth wirings to the voltage application circuits. The voltage application circuits are arranged so that a non-selected voltage application circuit is under a space between the first and second wirings, and a selected voltage application circuit is under the first wiring.

Abstract: To provide a fluorinated copolymer capable of obtaining an article excellent in water and oil repellency, and friction durability of water and oil repellency. A fluorinated copolymer having units based on the following monomer a and units based on the following monomer b, wherein the proportion of the units based on the monomer a is from 20 to 50 mol % based on the total number of moles of units constituting the fluorinated copolymer, the mass average molecular weight is from 20,000 to 100,000, and the ratio of the half-width W1 of the peak of the fluorinated copolymer to the peak width W2 in a chromatogram obtainable by high performance liquid chromatography measurement is from 0.35 to 0.55: Monomer a: a compound represented by CH2?CH—Rf (Rf: a C1-8 perfluoroalkyl group; Monomer b: a monomer copolymerizable with the monomer a.

Abstract: To provide an antifouling processing agent composition capable of imparting oil repellency and antifouling properties (stain release properties), while suppressing a reduction in the water absorbency of a textile product. This antifouling processing agent composition comprises: a fluorinated polymer comprising from 30 to 70 mass % of units based on F(CF2)nY—OCOCR?CH2 (wherein Y is an alkylene group, and R is a hydrogen atom, an alkyl group, or a halogen atom) and from 20 to 60 mass % of units based on CH2?CR1—COO—(R2O)q—R3 (wherein R1 is a hydrogen atom or a methyl group, R2 is an alkylene group, and R3 is a hydrogen atom, an alkyl group, a (meth)acryloyl group, or a glycidyl group), and having a number average molecular weight of 3,000-500,000; and a fluorinated amphoteric surfactant having a C1-6 perfluoroalkyl group or a C3-9 perfluoroalkenyl group, and having a number average molecular weight of less than 3,000.

Abstract: A semiconductor memory device according to an embodiment includes: a substrate having a substrate plane extending in a first direction and a second direction intersecting with the first direction; a first wiring provided above the substrate, the first wiring being provided so that a longitudinal direction extends along the first direction; a second wiring provided above the substrate, the second wiring being separated from the first wiring in the first direction, the second wiring being passed by the same virtual line together with the first wiring, the second wiring being provided so that a longitudinal direction extends along the first direction; a third wiring provided between the first wiring and the second wiring, the third wiring being separated from the first wiring and the second wiring, the third wiring being passed by the same virtual line together with the first wiring and the second wiring, the third wiring being provided so that a longitudinal direction extends along the first direction; a fourth

Abstract: A semiconductor memory device according to an embodiment includes: a substrate having a substrate plane extending in a first direction and a second direction intersecting with the first direction; a first wiring provided above the substrate, the first wiring being provided so that a longitudinal direction extends along the first direction; a second wiring provided above the substrate, the second wiring being separated from the first wiring in the first direction, the second wiring being passed by the same virtual line together with the first wiring, the second wiring being provided so that a longitudinal direction extends along the first direction; a third wiring provided between the first wiring and the second wiring, the third wiring being separated from the first wiring and the second wiring, the third wiring being passed by the same virtual line together with the first wiring and the second wiring, the third wiring being provided so that a longitudinal direction extends along the first direction; a fourth

Abstract: A semiconductor memory device includes first and second wirings extending in a first direction and spaced apart from each other in the first direction, third wirings above the first and second wirings and extending in a second direction, fourth and fifth wirings above the third wirings, extending in the first direction, and spaced apart from each other in the second direction, a plurality of memory cells between each third wiring and each of first, second, fourth, and fifth wirings, voltage application circuits, connection conductors between the voltage application circuits and the wirings, and connection wirings that electrically connect the fourth and fifth wirings to the voltage application circuits. The voltage application circuits are arranged so that a non-selected voltage application circuit is under a space between the first and second wirings, and a selected voltage application circuit is under the first wiring.

Abstract: A mobile terminal includes a display device that displays pages, and a control unit that acts as an input receiver that receives a writing made on the page, displayed on the display device, an application executor that executes an application program, a recording requester that requests a data management system to record playback data including the written data received by the input receiver and a task executed by the browser application program acquired by the browser expander, with a time stamp added to the written data and the executed task, and a playback processor that plays back the written data and the executed task included in the playback data acquired from the data management system, in synchronization according to the time stamp. The playback processor plays back the task executed by the browser application program, through the browser expander.

Abstract: A semiconductor storage device includes first, second, and third wiring layers, each including a plurality of first wirings, fourth and fifth wiring layers, each including a plurality of second wirings, wherein the fourth wiring layer is between the first and second wiring layers and the fifth wiring layer is between the second and third wiring layers, memory cells formed at intersections of the first and second wirings of adjacent wiring layers, first and second contacts electrically connected to a first wiring of the first wiring layer and a first wiring of the second wiring layer, respectively, in the hook-up region, a sixth wiring layer including a first connection wiring electrically connected to the first contact and a second connection wiring electrically connected to the second contact and separated from the first connection wiring, and first and second drive circuits electrically connected to the first and second connection wirings, respectively.

Abstract: An exhaust gas-purifying three-way catalyst containing: (i) base material particles of a Nd-solid dissolved zirconia-based complex oxide comprising Nd and Zr as constituent metal elements in the following mass proportions: ZrO2 50 to 75% by mass; and Nd2O3 25 to 50% by mass, in terms of oxides; and (ii) Pd catalyst particles supported on the base material particles, wherein the Nd-solid dissolved zirconia-based complex oxide further contains at least one or more rare earth elements selected from the group consisting of yttrium, scandium, lanthanum, and praseodymium, as a constituent metal element, in an amount of a total of more than 0% by mass to 20% by mass or less in terms of an oxide.

Abstract: To provide a method for producing a water/oil repellent composition, whereby an article which is excellent in the oil repellency while maintaining the water repellency and the heavy-rain durability, can be produced. A method for producing a water/oil repellent composition, which comprises mixing an emulsion of a polymer having from 10 to 50 mass % of units based on a monomer having a perfluoroalkyl group per all units and an emulsion of a monomer component containing at least 80 mass % of a monomer having a perfluoroalkyl group so that the proportion of the mass of the polymer will be from 50 to 99 mass % per the sum of the mass of the polymer and the total mass of the monomer component and then polymerizing the monomer component.

Abstract: Provided is, for example, an exhaust gas-purifying three-way catalyst which is suppressed in particle growth due to sintering of a catalytically active component on a carrier in exposure to a high temperature and thus is enhanced in purification performance, and a method for producing the same, as well as an integral structure type exhaust gas-purifying catalyst using the same. The exhaust gas-purifying three-way catalyst of the present invention includes a composite particle which contains a base material particle having a pore size of 100 to 650 nm as measured by a mercury intrusion method and a catalytically active particle of a platinum group element supported on the base material particle, in which a content proportion of the catalytically active particle is 0.001 to 30% by mass in total in terms of metal of the platinum group element, based on a total amount of the composite particle.

Abstract: To provide a liquid repellent composition whereby a treated article excellent in liquid repellency is obtainable, which is excellent in stability and does not have such a problem as an odor attributable to ammonia or an organic amine; a method for its production; and a method for producing oil resistant paper.