Abstract: The present invention provides carbon nanotubes perpendicularly and densely deposited over a wide area of a substrate. The carbon nanotubes are manufactured by supplying alternating-current power at a specific frequency between an anode and a cathode disposed in a reactor, and causing plasma to be generated between the anode and the cathode by introducing mixed gas containing an aliphatic hydrocarbon having 1-5 carbon atoms and hydrogen or mixed gas containing an aromatic hydrocarbon and hydrogen. The substrate is disposed between the anode and the cathode and held at a distance two times or less of the mean free path of a hydrocarbon cation from the anode.

Abstract: The present invention provides carbon nanotubes perpendicularly and densely deposited over a wide area of a substrate. The carbon nanotubes are manufactured by supplying alternating-current power at a specific frequency between an anode and a cathode disposed in a reactor, and causing plasma to be generated between the anode and the cathode by introducing mixed gas containing an aliphatic hydrocarbon having 1-5 carbon atoms and hydrogen or mixed gas containing an aromatic hydrocarbon and hydrogen. The substrate is disposed between the anode and the cathode and held at a distance two times or less of the mean free path of a hydrocarbon cation from the anode.

Abstract: The present invention provides carbon nanotubes perpendicularly and densely deposited over a wide area of a substrate. The carbon nanotubes are manufactured by supplying alternating-current power at a specific frequency between an anode and a cathode disposed in a reactor, and causing plasma to be generated between the anode and the cathode by introducing mixed gas containing an aliphatic hydrocarbon having 1-5 carbon atoms and hydrogen or mixed gas containing an aromatic hydrocarbon and hydrogen. The substrate is disposed between the anode and the cathode and held at a distance two times or less of the mean free path of a hydrocarbon cation from the anode.

Abstract: A method of producing a liquid crystal alignment layer comprising exposing an organic film to polarized pulse laser beam to align molecules in a surface portion of the organic film. There is provided a liquid crystal alignment layer composed of a polyamide film having aligned molecules in a surface portion.

Abstract: To provide a fluorine-containing resin molded article surface-modified by irradiating, onto a surface thereof, a laser beam having a wavelength of 150 to 370 nm through a basic solution, preferably an aqueous basic solution. The surface-modified fluorine-containing resin molded article is excellent in adhesion to not only organic materials but also metals.

Abstract: A method is disclosed for the deposition of crystalline diamond on a substrate such as a silicon wafer. A polymer (for example poly(methylmethacrylate)) is provided as a target for laser ablation using for example an ArF excimer laser or an Nd-Yag laser. The laser ablation is performed in the presence of a reactive gas such as oxygen or hydrogen. The substrate is heated to a temperature of between 450 and 700 degrees celsius.

Abstract: Reaction products of organosilane compounds or polydiphenylsilazane compounds and a novolac resin having phenolic groups can be used as O.sub.2 RIE barrier materials in semiconductor etching processes. These materials have low O.sub.2 etch rates and can be spun on to form crack-free thick layers. Particular RIE barrier materials contemplated have the general formula: ##STR1## wherein A is a methyl or phenyl group.

Abstract: Photoresist images are made resistant to reactive ion etching by treating them with a poly(dimethylsilazane).

Abstract: A thin film magnetic head is provided in which the electrical insulation surrounding the conductive coil comprises a photosensitive resin which has been crosslinked by a thermally activated crosslinking agent or promotor. The addition of the thermally activated crosslinking agent or promotor greatly reduces both the cure temperature and cure time and results in enhanced dimensional stability without any deleterious effects.

Abstract: A resist composition is made resistant to reactive ion etching by admixing therewith a poly(dialkylsilazane).

Abstract: The reactive ion etching and thermal flow resistance of a resist image is enhanced by contacting the resist image with an alkyl metal compound of magnesium or aluminum.

Abstract: A dry process for forming a positive tone micro pattern by coating a substrate with an organic polymer film then with a film of an oxygen etch barrier, selected from the group consisting of films of organometallic, including organosilicon compounds and metals, exposing the etch barrier film to a low energy proton beam in a patternwise manner, and developing the pattern by means of oxygen reactive ion etching.

Abstract: A dry process for forming via holes with sloped walls by oxygen reactive ion etching through a perforated mask.

Abstract: A process for making an image oxygen-reactive ion etch barrier using a polysilane that is resistant to resistive ion etching and is also a positive acting resist.

Abstract: A patterned polymer film is deposited on a substrate by pattern-wise exposing a monomer vapor to a beam of ions and dry developing by etching with oxygen plasma.

Abstract: A polymeric halocarbon is used as an etch barrier for plasma etching in a process to make high resolution, high aspect ratio polymer patterns.

Abstract: A photoresist that has strong resistance to reactive ion etching, high photosensitivity to mid- and deep UV-light, and high resolution capability is formed by using as the resist material a copolymer of methacrylonitrile and methacrylic acid, and by baking the resist before the exposure to light for improved photosensitivity, and after exposure to light, development, and prior to treatment with reactive ion etching.

Abstract: The sensitivity of a positive working electron beam resist is increased by using as the resist material a resin which is a condensation product of formaldehyde with a phenol or a cresol having a chloro substituent ortho to the hydroxyl group on its aromatic ring.

Abstract: An electro-lithography method suitable for forming a high resolution pattern in an electron sensitive resist material is disclosed. This technology permits the inexpensive high resolution reproduction of masks for use in integrated circuits and magnetic bubbles. The method involves the application of a pulsed, electric field to two parallel electrodes having an electron beam resist layer positioned on one of the electrodes and a mask positioned between the second electrode and the resist layer. The mask forms a gap having a thickness of 10.sup.-4 m to 10.sup.-5 m with the resist layer.

Abstract: Positive resists are made using polymers and copolymers of methacrylic acid, methacrylic anhydride, methyl methacrylate, methacrylimide, and N-alkyl-methacrylimides which have been nitrated in up to about 10% of the monomer units on the methyl groups branching off the polymer chain. Inclusion of the nitro groups results in an increase of over an order of magnitude in the speed of development of images when the polymers are used as positive resists.