Abstract: A composite fire detector (12) which senses a heat temperature, smoke concentration, and gas concentration due to fire is connected to a transmission path (16) drawn from a fire receiver (10). When a fire test operation is sensed by the fire receiver, a test mode is set to the fire detector. The fire detector performs display control over alarm indicating lights in a mutually varied manner corresponding to each alarm test when a test jig is used to conduct an alarm test by sensing of a heat temperature, an alarm test by sensing of a smoke concentration, and an alarm test by sensing of a gas concentration in a state where the test mode is set. For example, the fire detector repeats one-time blinking of the alarm indicating lights for heat sensing, two-time blinking for smoke sensing, and three-time blinking for gas sensing at intervals of a predetermined nonoperating period.

Abstract: A composite fire detector (12) which senses a heat temperature, smoke concentration, and gas concentration due to fire is connected to a transmission path (16) drawn from a fire receiver (10). When a fire test operation is sensed by the fire receiver, a test mode is set to the fire detector. The fire detector performs display control over alarm indicating lights in a mutually varied manner corresponding to each alarm test when a test jig is used to conduct an alarm test by sensing of a heat temperature, an alarm test by sensing of a smoke concentration, and an alarm test by sensing of a gas concentration in a state where the test mode is set. For example, the fire detector repeats one-time blinking of the alarm indicating lights for heat sensing, two-time blinking for smoke sensing, and three-time blinking for gas sensing at intervals of a predetermined nonoperating period.

Abstract: This solar cell module is provided with a plurality of solar cells, a first protective member, a second protective member, a filler, and a wiring material. The solar cells have a photoelectric conversion part, transparent conductive layers formed on a principal surface of the photoelectric conversion part, and plated electrodes of silver or copper, formed directly on the transparent conductive layers.

Abstract: A solar cell module is provided with: a photoelectric conversion section having a substrate; collecting electrodes, which are disposed on the photoelectric conversion section; adhesive layers disposed on the collecting electrodes; and wiring material pieces respectively connected to the collecting electrodes with the adhesive layers therebetween. In the longitudinal direction of the collecting electrodes, the collecting electrodes respectively have end portions formed thicker than the center portions, and in the longitudinal direction of the collecting electrodes, the adhesive layers respectively have potions corresponding to the center portions of the collecting electrodes formed thicker than adhesive layer portions corresponding to the end portions of the collecting electrodes.

Abstract: A solar module and a manufacturing method for a solar module with improved reliability are provided. The solar module includes a solar cell and a wiring member. A wiring member is connected electrically to the solar cell. The solar cell includes a photoelectric conversion unit, electrodes, and resin members. The electrodes are arranged on one main surface of the photoelectric conversion unit. The electrodes are connected electrically to the wiring member. The resin members are arranged on the one main surface in the area including an electrode and below the wiring member. The solar module also includes a resin adhesive layer. The resin adhesive layer bonds the wiring member to the surface of the solar cell including the surfaces of the resin members.

Abstract: A semiconductor laser device according to the present invention comprises a GaAs substrate of a first conductivity type, a cladding layer of the first conductivity type formed on one main surface of the substrate, an active layer having a quantum well structure in which a tensile strain quantum well layer and a quantum barrier layer which are formed on the cladding layer of the first conductivity type are alternately laminated, and a cladding layer of a second conductivity type formed on the active layer. The one main surface of the substrate is a surface misoriented by 9.degree. to 17.degree. from a {100} plane of the substrate in a <011> direction, and the cavity length is not less than 150 .mu.m nor more than 300 .mu.m.

Abstract: On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer.