Patents by Inventor Hiroyuki Matsui
Hiroyuki Matsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230061666Abstract: A focal length adjusting device is provided with: a retention unit for retaining a first lens; a guide unit for supporting the retention unit so as to allow movement along an optical axis of laser light; a stepper motor that has a shaft body and is arranged so that the central axis of the shaft body is orthogonal to the optical axis; and a conversion unit that is interposed between the shaft body and the retention unit and converts rotational movement of the shaft body into linear movement of the retention unit. The conversion unit comprises, between itself and the retention unit, a coupling unit that transmits kinetic force from the conversion unit to the retention unit in a direction parallel to the optical axis but does not transmit same in a direction parallel to the central axis of the shaft body.Type: ApplicationFiled: January 26, 2021Publication date: March 2, 2023Applicant: Panasonic Intellectual Property Management Co., Ltd.Inventors: Akihisa MATSUMOTO, Hiroyuki MATSUI, Naoya YAMAZAKI
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Patent number: 10903434Abstract: An organic semiconductor element functions as a strain sensor, and includes a substrate and an organic semiconductor layer formed on the substrate as a single-crystal thin film of an organic semiconductor that is a polycyclic aromatic compound with four or more rings or a polycyclic compound with four or more rings including one or a plurality of unsaturated five-membered heterocyclic compounds and a plurality of benzene rings. Since the organic semiconductor layer is formed as the single-crystal thin film, an identical crystal structure is obtained regardless of formation technique. Therefore, when the same strain is given, the same carrier mobility is obtained and uniform property is obtained with respect to the strain. Accordingly, it is possible to provide strain sensors having uniform property.Type: GrantFiled: July 3, 2019Date of Patent: January 26, 2021Assignee: THE UNIVERSITY OF TOKYOInventors: Hiroyuki Matsui, Junichi Takeya
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Patent number: 10854825Abstract: An organic semiconductor element functions as a strain sensor, and includes a substrate and an organic semiconductor layer formed on the substrate as a single-crystal thin film of an organic semiconductor that is a polycyclic aromatic compound with four or more rings or a polycyclic compound with four or more rings including one or a plurality of unsaturated five-membered heterocyclic compounds and a plurality of benzene rings. Since the organic semiconductor layer is formed as the single-crystal thin film, an identical crystal structure is obtained regardless of formation technique. Therefore, when the same strain is given, the same carrier mobility is obtained and uniform property is obtained with respect to the strain. Accordingly, it is possible to provide strain sensors having uniform property.Type: GrantFiled: January 27, 2016Date of Patent: December 1, 2020Assignee: THE UNIVERSITY OF TOKYOInventors: Hiroyuki Matsui, Junichi Takeya
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Patent number: 10509928Abstract: An information collection system includes a plurality of radio tags and a reading device. Each of the radio tags stores identification information and includes a sensor, an antenna that receives a carrier wave from the reading device, and a data transmission unit that sends measurement data including the identification information and information obtained by the sensor to the reading device after the carrier wave is received by the antenna. The plurality of radio tags send the identification information and the information obtained by the sensor with different natural periods from the data transmission units. The reading device transmits the carrier wave to each of the radio tags, receives data from each of the radio tags, and obtains the data.Type: GrantFiled: July 23, 2018Date of Patent: December 17, 2019Assignees: FUJIFILM Corporation, THE UNIVERSITY OF TOKYOInventors: Yoshihisa Usami, Takayoshi Yokoyama, Yuki Owashi, Hiroyuki Matsui, Junichi Takeya
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Publication number: 20190326522Abstract: An organic semiconductor element functions as a strain sensor, and includes a substrate and an organic semiconductor layer formed on the substrate as a single-crystal thin film of an organic semiconductor that is a polycyclic aromatic compound with four or more rings or a polycyclic compound with four or more rings including one or a plurality of unsaturated five-membered heterocyclic compounds and a plurality of benzene rings. Since the organic semiconductor layer is formed as the single-crystal thin film, an identical crystal structure is obtained regardless of formation technique. Therefore, when the same strain is given, the same carrier mobility is obtained and uniform property is obtained with respect to the strain. Accordingly, it is possible to provide strain sensors having uniform property.Type: ApplicationFiled: July 3, 2019Publication date: October 24, 2019Applicant: THE UNIVERSITY OF TOKYOInventors: Hiroyuki MATSUI, Junichi TAKEYA
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Publication number: 20190005282Abstract: An information collection system includes a plurality of radio tags and a reading device. Each of the radio tags stores identification information and includes a sensor, an antenna that receives a carrier wave from the reading device, and a data transmission unit that sends measurement data including the identification information and information obtained by the sensor to the reading device after the carrier wave is received by the antenna. The plurality of radio tags send the identification information and the information obtained by the sensor with different natural periods from the data transmission units. The reading device transmits the carrier wave to each of the radio tags, receives data from each of the radio tags, and obtains the data.Type: ApplicationFiled: July 23, 2018Publication date: January 3, 2019Applicants: FUJIFILM Corporation, THE UNIVERSITY OF TOKYOInventors: Yoshihisa USAMI, Takayoshi YOKOYAMA, Yuki OWASHI, Hiroyuki MATSUI, Junichi TAKEYA
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Patent number: 10162989Abstract: A sensing system includes an electronic tag and a reading device that transmits and receives information to and from the electronic tag. The reading device includes a transmission unit that sends an alternating-current radio wave including a high-frequency component and a low-frequency component. The electronic tag does not include a power supply and includes a receiving unit that obtains a power supply voltage from the high-frequency component of the alternating-current radio wave and obtains a clock signal from the low-frequency component and a return unit that maintains a maximum amplitude of the clock signal and sends a combination of information and the clock signal as a return signal. The reading device further includes a processing unit that decodes the return signal sent from the electronic tag on the basis of the clock signal.Type: GrantFiled: June 29, 2018Date of Patent: December 25, 2018Assignees: FUJIFILM Corporation, TOPPAN FORMS CO., LTD., THE UNIVERSITY OF TOKYOInventors: Yoshihisa Usami, Takayoshi Yokoyama, Yuki Owashi, Hiroyuki Matsui, Junichi Takeya
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Publication number: 20180307872Abstract: A sensing system includes an electronic tag and a reading device that transmits and receives information to and from the electronic tag. The reading device includes a transmission unit that sends an alternating-current radio wave including a high-frequency component and a low-frequency component. The electronic tag does not include a power supply and includes a receiving unit that obtains a power supply voltage from the high-frequency component of the alternating-current radio wave and obtains a clock signal from the low-frequency component and a return unit that maintains a maximum amplitude of the clock signal and sends a combination of information and the clock signal as a return signal. The reading device further includes a processing unit that decodes the return signal sent from the electronic tag on the basis of the clock signal.Type: ApplicationFiled: June 29, 2018Publication date: October 25, 2018Applicants: FUJIFILM Corporation, TOPPAN FORMS CO., LTD., THE UNIVERSITY OF TOKYOInventors: Yoshihisa USAMI, Takayoshi YOKOYAMA, Yuki OWASHI, Hiroyuki MATSUI, Junichi TAKEYA
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Publication number: 20180145266Abstract: An organic semiconductor element functions as a strain sensor, and includes a substrate and an organic semiconductor layer formed on the substrate as a single-crystal thin film of an organic semiconductor that is a polycyclic aromatic compound with four or more rings or a polycyclic compound with four or more rings including one or a plurality of unsaturated five-membered heterocyclic compounds and a plurality of benzene rings. Since the organic semiconductor layer is formed as the single-crystal thin film, an identical crystal structure is obtained regardless of formation technique. Therefore, when the same strain is given, the same carrier mobility is obtained and uniform property is obtained with respect to the strain. Accordingly, it is possible to provide strain sensors having uniform property.Type: ApplicationFiled: January 27, 2016Publication date: May 24, 2018Applicant: THE UNIVERSITY OF TOKYOInventors: Hiroyuki MATSUI, Junichi TAKEYA
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Patent number: 9202665Abstract: Provided is a charged particle beam apparatus adapted so that even when an additional device is not mounted in the charged particle beam apparatus, the apparatus rapidly removes, by neutralizing, a local charge developed on a region of a sample that has been irradiated with a charged particle beam. After charged particle beam irradiation for measurement of the sample, the apparatus controls a retarding voltage or/and an accelerating voltage at a stage previous to a next measurement, and then neutralizes an electric charge by reducing a difference between a value of the retarding voltage and that of the accelerating voltage to a value smaller than during the currently ongoing measurement. The charged particle beam achieves neutralizing without reducing throughput, since the local charge developed on the region of the sample that has been irradiated with the charged particle beam is removed, even without an additional device mounted in the apparatus.Type: GrantFiled: November 30, 2011Date of Patent: December 1, 2015Assignee: Hitachi High-Technologies CorporationInventors: Hiroyuki Matsui, Osamu Komuro, Makoto Nishihara, Zhaohui Cheng
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Patent number: 9059407Abstract: A method for manufacturing a uniform organic semiconductor thin film consisting of single organic molecule with extremely few pinholes and of which both quality and thickness are uniform when the organic semiconductor thin film is manufactured by printing process. The uniform organic semiconductor thin film is manufactured by steps of: preparing a first ink obtained by dissolving a high concentration of the organic semiconductor in an organic solvent with high affinity for the organic semiconductor, and a second ink consisting of an organic solvent having a low affinity for the organic semiconductor; mixing the first and second inks on a substrate by simultaneously or alternately discharging the first and second inks from each ink head.Type: GrantFiled: August 10, 2011Date of Patent: June 16, 2015Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Tatsuo Hasegawa, Hiromi Minemawari, Toshikazu Yamada, Hiroyuki Matsui
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Publication number: 20140027635Abstract: Provided is a charged particle beam apparatus adapted so that even when an additional device is not mounted in the charged particle beam apparatus, the apparatus rapidly removes, by neutralizing, a local charge developed on a region of a sample that has been irradiated with a charged particle beam. After charged particle beam irradiation for measurement of the sample, the apparatus controls a retarding voltage or/and an accelerating voltage at a stage previous to a next measurement, and then neutralizes an electric charge by reducing a difference between a value of the retarding voltage and that of the accelerating voltage to a value smaller than during the currently ongoing measurement. The charged particle beam achieves neutralizing without reducing throughput, since the local charge developed on the region of the sample that has been irradiated with the charged particle beam is removed, even without an additional device mounted in the apparatus.Type: ApplicationFiled: November 30, 2011Publication date: January 30, 2014Inventors: Hiroyuki Matsui, Osamu Komuro, Makoto Nishihara, Zhaohui Cheng
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Patent number: 8490857Abstract: A reflow apparatus, where formic acid is used for cleaning a surface of a solder electrode on a processing target, is disclosed. The reflow apparatus includes a processing chamber, a formic acid introduction mechanism for supplying an atmosphere gas containing formic acid to the processing chamber, and a shielding member that is made of a material having corrosion resistance against formic acid. The shielding member is arranged between a reflow processing section of the processing chamber and an inner wall of the processing chamber. In place of or in addition to the shielding member, the reflow apparatus may include a heater for decomposing residual formic acid.Type: GrantFiled: March 31, 2012Date of Patent: July 23, 2013Assignee: Fujitsu Semiconductor LimitedInventors: Hiroyuki Matsui, Hirohisa Matsuki, Koki Otake
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Publication number: 20130149811Abstract: The first object of the present invention is to provide a method for manufacturing a uniform organic semiconductor thin film consisting of single organic molecule with extremely few pinholes and of which both quality and thickness are uniform when the organic semiconductor thin film is manufactured by printing process. The second object of the present invention is to manufacture a monocrystalline organic semiconductor of which almost the entire region consists of a single monocrystal, by printing process. The uniform organic semiconductor thin film is manufactured by steps of: preparing a first ink obtained by dissolving a high concentration of the organic semiconductor in an organic solvent with high affinity for the organic semiconductor, and a second ink consisting of an organic solvent having a low affinity for the organic semiconductor; mixing the first and second inks on a substrate by simultaneously or alternately discharging the first and second inks from each ink head.Type: ApplicationFiled: August 10, 2011Publication date: June 13, 2013Inventors: Tatsuo Hasegawa, Hiromi Minemawari, Toshikazu Yamada, Hiroyuki Matsui
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Patent number: 8336756Abstract: A reflow apparatus, where formic acid is used for cleaning a surface of a solder electrode on a processing target, is disclosed. The reflow apparatus includes a processing chamber, a formic acid introduction mechanism for supplying an atmosphere gas containing formic acid to the processing chamber, and a shielding member that is made of a material having corrosion resistance against formic acid. The shielding member is arranged between a reflow processing section of the processing chamber and an inner wall of the processing chamber. In place of or in addition to the shielding member, the reflow apparatus may include a heater for decomposing residual formic acid.Type: GrantFiled: February 24, 2006Date of Patent: December 25, 2012Assignee: Fujitsu Semiconductor LimitedInventors: Hiroyuki Matsui, Hirohisa Matsuki, Koki Otake
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Patent number: 8302843Abstract: A process for producing a semiconductor device, includes: first melting by heating only a superior portion of a bump formed on an electrode on one principle surface of a semiconductor substrate; and second melting the entire bump by also heating an inferior portion of the bump.Type: GrantFiled: March 27, 2009Date of Patent: November 6, 2012Assignee: Fujitsu Semiconductor LimitedInventors: Hiroyuki Matsui, Yutaka Makino, Yoshito Akutagawa
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Publication number: 20120251968Abstract: A process for producing a semiconductor device, includes: first melting by heating only a superior portion of a bump formed on an electrode on one principle surface of a semiconductor substrate; and second melting the entire bump by also heating an inferior portion of the bump.Type: ApplicationFiled: June 14, 2012Publication date: October 4, 2012Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Hiroyuki MATSUI, Yutaka Makino, Yoshito Akutagawa
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Publication number: 20120187181Abstract: A reflow apparatus, where formic acid is used for cleaning a surface of a solder electrode on a processing target, is disclosed. The reflow apparatus includes a processing chamber, a formic acid introduction mechanism for supplying an atmosphere gas containing formic acid to the processing chamber, and a shielding member that is made of a material having corrosion resistance against formic acid. The shielding member is arranged between a reflow processing section of the processing chamber and an inner wall of the processing chamber. In place of or in addition to the shielding member, the reflow apparatus may include a heater for decomposing residual formic acid.Type: ApplicationFiled: March 31, 2012Publication date: July 26, 2012Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Hiroyuki MATSUI, Hirohisa Matsuki, Koki Otake
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Patent number: 7888258Abstract: A forming method of an electrode includes the steps of providing an electrode material on a conductive part; exposing the electrode material at a temperature equal to or higher than a melting point of the electrode material in an oxidizing atmosphere; and exposing the melted electrode material, in a reducing atmosphere, at a temperature equal to or higher than the melting point of the electrode material and lower than the temperature at which the electrode material is exposed in the oxidizing atmosphere.Type: GrantFiled: June 23, 2008Date of Patent: February 15, 2011Assignee: Fujitsu Semiconductor LimitedInventors: Yoshito Akutagawa, Hiroyuki Matsui, Yutaka Makino
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Publication number: 20090184156Abstract: A process for producing a semiconductor device, includes: first melting by heating only a superior portion of a bump formed on an electrode on one principle surface of a semiconductor substrate; and second melting the entire bump by also heating an inferior portion of the bump.Type: ApplicationFiled: March 27, 2009Publication date: July 23, 2009Applicant: FUJITSU MICROELECTRONICS LIMITEDInventors: Hiroyuki Matsui, Yutaka Makino, Yoshito Akutagawa