Abstract: An electrolytic capacitor includes a capacitor element and an electrolyte solution impregnated in the capacitor element. The capacitor element includes an anode foil, cathode foil, separator, and a solid electrolytic layer. The anode foil has a dielectric layer on its surface, and the cathode foil confronts the anode foil. The separator is interposed between the anode foil and the cathode foil. The solid electrolytic layer is formed on the surfaces of the anode foil, cathode foil, and separator as an aggregate of fine particles of conductive polymer. The separator has an air-tightness not greater than 2.0 s/100 ml. Sizes of the fine particles measure not greater than 100 nm in diameter, and an amount of the fine particles contained falls within a range from 0.3 mg/cm2 to 1.2 mg/cm2, inclusive, as converted to weight per unit area of the anode foil.

Abstract: An electrolytic capacitor includes a capacitor element and an electrolyte solution impregnated into the capacitor element. The capacitor element includes an anode foil, cathode foil, separator, and a solid electrolytic layer. The anode foil has a dielectric layer on its surface, and the cathode foil confronts the anode foil. The separator is interposed between the anode foil and the cathode foil. The solid electrolytic layer is formed on the surfaces of the anode foil, cathode foil, and separator as an aggregate of fine particles of conductive polymer. The separator has an air-tightness not greater than 2.0 s/100 ml. Sizes of the fine particles measure not greater than 100 nm in diameter, and the fine particles are contained in an amount ranging from 0.3 mg/cm2 to 1.2 mg/cm2 converted to amounts per unit area of the anode foil.

Abstract: A method is provided for using a film formation apparatus including a process container having an inner surface, which contains as a main component a material selected from the group consisting of quartz and silicon carbide. The method includes performing a film formation process to form a silicon nitride film on a product target substrate inside the process container, and then, unloading the product target substrate from the process container. Thereafter, the method includes supplying an oxidizing gas into the process container with no product target substrate accommodated therein, thereby performing an oxidation process to change by-product films deposited on the inner surface of the process container into a composition richer in oxygen than nitrogen, at a part of the by-product films from a surface thereof to a predetermined depth.

Abstract: A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field and confining a plasma generation area airtightly communicating with the process field, an ICP electrode disposed outside the plasma generation box and extending in a longitudinal direction of the plasma generation box, and an RF power supply connected to the ICP electrode. The ICP electrode includes a separated portion separated from a wall surface of the plasma generation box by a predetermined distance.

Abstract: A capacitor element includes an anode foil, the first oxide film on a surface of the anode foil, a solid electrolyte layer formed using ?-conjugated conductive polymer dispersing material on the first oxide film, and a cathode foil on the solid electrolyte layer. The cathode foil faces the first oxide film across the solid electrolyte layer. An electrolytic capacitor includes the capacitor element, an anode terminal connected to the anode foil, and a second oxide film on a surface of the anode terminal. The second oxide film provided on the anode terminal has higher water repellency than the first oxide film provided on the anode foil. This electrolytic capacitor can reduce a leakage current.

Abstract: A support for a separation membrane includes a long-fiber nonwoven fabric composed of thermoplastic continuous filaments.

Abstract: A suction unit 10 includes a main body portion having a first surface 13 on which a semiconductor wafer W is arranged and a second surface 14 opposite to the first surface 13, and in which a through-hole 15 that penetrates through the first surface 13 and the second surface 14 is formed and a light transmitting portion having a light incident surface 16 and a light emitting surface 17, and which is fitted to the through-hole 15. Further, in the first surface 13, a first suction groove 13a for vacuum sucking the semiconductor wafer W to fix the semiconductor device D to the light incident surface 16 is formed, and in the second surface 14, a second suction groove 14a for vacuum sucking the solid immersion lens S to fix the solid immersion lens S to the light emitting surface 17 is formed.

Abstract: A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.

Abstract: A heat treatment apparatus for performing heat treatment of processing objects at a time without changing the interior configuration of a conventional clean room even when the processing objects are large-sized. The heat treatment apparatus is installed in a clean room. The heat treatment apparatus includes: a heat treatment furnace including a vertical processing chamber having a furnace opening at the top and adapted to house and heat-treat processing objects, a heat insulator that surrounds the circumference of the processing chamber, and a heater provided on the inner peripheral surface of the heat insulator; a lid for closing the furnace opening of the processing chamber; and a holding tool, hung via a heat-retaining cylinder from the lid, for holding the processing objects in multiple stages. The heat treatment furnace of the heat treatment apparatus, for the most part in the height direction, lies beneath the floor of the clean room.

Abstract: An electrolytic capacitor includes a capacitor element and an electrolyte solution impregnated into the capacitor element. The capacitor element includes an anode foil, cathode foil, separator, and a solid electrolytic layer. The anode foil has a dielectric layer on its surface, and the cathode foil confronts the anode foil. The separator is interposed between the anode foil and the cathode foil. The solid electrolytic layer is formed on the surfaces of the anode foil, cathode foil, and separator as an aggregate of fine particles of conductive polymer. The separator has an air-tightness not greater than 2.0 s/100 ml. Sizes of the fine particles measure not greater than 100 nm in diameter, and the fine particles are contained in an amount ranging from 0.3 mg/cm2 to 1.2 mg/cm2 converted to amounts per unit area of the anode foil.

Abstract: A treatment apparatus uses an inductive heating method to allow an object to be heated while preventing a treatment chamber from being heated. The treatment apparatus for performing a heat treatment on the object has a treatment chamber and an induction heating coil section. The treatment chamber is capable of accommodating a plurality of objects. The induction heating coil section is wound around an outer circumference of the treatment chamber. The treatment apparatus also has a high frequency power supply and a gas supply unit. The high frequency power supply applies high frequency power to the induction heating coil section. The gas supply unit introduces a necessary gas to the treatment chamber. A holding unit is inserted in and removed from the treatment chamber under the condition that the holding unit holds the object and an induction heating generator adapted to be inductively heated by means of a high frequency wave emitted by the induction heating coil section.

Abstract: A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.

Abstract: An electrolytic capacitor includes a capacitor element, an electrolyte solution with which the capacitor element is impregnated, and an outer package enclosing the capacitor element and the electrolyte solution. The capacitor element includes an anode foil having a dielectric layer on a surface thereof, a cathode foil, a separator disposed between the anode foil and the cathode foil, and a solid electrolyte layer in contact with the dielectric layer of the anode foil and the cathode foil. The electrolyte solution contains a low-volatile solvent that is at least one of polyalkylene glycol and a derivative of polyalkylene glycol.

Abstract: A method is provided for using a film formation apparatus including a process container having an inner surface, which contains as a main component a material selected from the group consisting of quartz and silicon carbide. The method includes performing a film formation process to form a silicon nitride film on a product target substrate inside the process container, and then, unloading the product target substrate from the process container. Thereafter, the method includes supplying an oxidizing gas into the process container with no product target substrate accommodated therein, thereby performing an oxidation process to change by-product films deposited on the inner surface of the process container into a composition richer in oxygen than nitrogen, at a part of the by-product films from a surface thereof to a predetermined depth.

Abstract: A substrate support instrument includes a first support instrument portion and a second support instrument portion detachably combined with each other. Each of the first support instrument portion and second support instrument portion includes: a ceiling plate and a bottom plate facing each other upward and downward; a support pillar disposed in plurality along a peripheral edge portion of each of the ceiling plate and bottom plate, and configured to connect the ceiling plate and the bottom plate; and a support part disposed at a position corresponding to each of the support pillars, and configured to support a bottom of each substrate. In the support part, a height position is set such that a substrate supported in the first support instrument portion and a substrate supported in the second support instrument portion are alternately arranged, when the first support instrument portion is combined with the second support instrument portion.

Abstract: A loading unit is provided under a processing unit for performing a thermal treatment process on a substrate, loads/unloads a substrate holding mechanism by which substrates are held to the processing unit, and transfers the substrates to the substrate holding mechanism. The loading unit includes a loading case provided to be connected to the processing unit and surrounds the entire processing unit; an elevator mechanism that has a holding arm for holding a lower portion of the substrate holding mechanism and moves up/down the substrate holding mechanism; a substrate transfer mechanism which transfers the substrates to the substrate holding mechanism; and a substrate holding mechanism accommodating recess portion provided in a lower portion of the loading case corresponding to the lower portion of the substrate holding mechanism and is provided to protrude downward to accommodate a lower end portion of the substrate holding mechanism.

Abstract: A substrate transfer apparatus includes: a transfer base; a plate-like holding member which is configured to hold a substrate and which is horizontally movable back and forth with respect to the transfer base; a piezoelectric body mounted to the holding member and which, when a voltage is applied thereto, contracts or elongates to apply a bending stress to the holding member; and a power supply configured to apply a voltage to the piezoelectric body so as to apply a bending stress, which counteracts deflection that has occurred in the holding member, is applied to the holding member.

Abstract: A plasma treating apparatus adapted to provide a predetermined plasma treatment to an object W to be treated comprises a processing chamber 12 configured to be capable of being vacuumed, an object holding means 20 adapted to hold the object to be treated, a high frequency power source 58 adapted to generate high frequency voltage, a plasma gas supplying means 38 adapted to supply a plasma generating gas to be treated to generate plasma to the processing chamber, a pair of plasma electrodes 56, 56B connected to the output side of the high frequency power source via wirings 60 to generate plasma in the processing chamber, the pair of plasma electrodes being brought into an excited electrode state. In addition, a high frequency matching means 72 is provided in the middle of the wirings. In this case, each of the plasma electrodes 56A, 56B is not grounded. Thus, the plasma density can be increased, and the efficiency of generating plasma can be enhanced.

Abstract: A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.

Abstract: A solid electrolytic capacitor includes a positive electrode foil made of metal, a dielectric oxide layer provided on a surface of the positive electrode foil, a separator provided on the dielectric oxide layer, a solid electrolyte layer made of conductive polymer impregnated in the separator, a negative electrode foil facing the dielectric oxide layer across the solid electrolyte layer, and a phosphate provided on the dielectric oxide layer. This solid electrolytic capacitor reduces a leakage current.