Patents by Inventor Hiroyuki Naoi

Hiroyuki Naoi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ELECTROPHOTOGRAPHIC IMAGE-RECEIVING SHEET AND IMAGE FORMING METHOD USING THE SAME
    Publication number: 20090061348
    Abstract: The present invention provides an electrophotographic image-receiving sheet including a support having raw paper and a resin layer on at least one surface of the raw paper; and at least one coating layer on the support, wherein the thickness of the resin layer at least on the image-forming side is 5 ?m to 15 ?m, the coating layer contains at least hollow particles, and the amount of the hollow particles contained in the coating layer is 0.5 g/m2 or more.
    Type: Application
    Filed: August 26, 2008
    Publication date: March 5, 2009
    Applicant: FUJIFILM Corporation
    Inventors: Hiroyuki Naoi, Atsushi Kato, Hirobumi Mitsuo
  • Chemical vapor deposition apparatus and chemical vapor deposition method
    Patent number: 6592674
    Abstract: There are disclosed an apparatus and a method for chemical vapor deposition for a semiconductor film and the like, wherein a feed gas is supplied in a horizontal tubular reactor in the direction parallel to a substrate; a forcing gas is supplied therein in the direction perpendicular to the substrate; and the flow rate per unit area of the forcing gas which is supplied from a forcing gas introduction portion into the reactor is made lower in the central portion of the forcing gas introduction portion than in the peripheral portion thereof, or lower in the middle of a feed gas passageway than at both the end portions of the passageway.
    Type: Grant
    Filed: September 26, 2001
    Date of Patent: July 15, 2003
    Assignees: Japan Pionics Co., Ltd., Tokushima Sanso Co., Ltd.
    Inventors: Shiro Sakai, Yukichi Takamatsu, Yuji Mori, Hiroyuki Naoi, Hong Xing Wang, Yoshiyasu Ishihama, Yutaka Amijima
  • Chemical vapor deposition apparatus and chemical vapor deposition method
    Publication number: 20020042191
    Abstract: There are disclosed an apparatus and a method for chemical vapor deposition for a semiconductor film and the like, wherein a feed gas is supplied in a horizontal tubular reactor in the direction parallel to a substrate; a forcing gas is supplied therein in the direction perpendicular to the substrate; and the flow rate per unit area of the forcing gas which is supplied from a forcing gas introduction portion into the reactor is made lower in the central portion of the forcing gas introduction portion than in the peripheral portion thereof, or lower in the middle of a feed gas passageway than at both the end portions of the passageway.
    Type: Application
    Filed: September 26, 2001
    Publication date: April 11, 2002
    Applicant: Japan Pionics Co., Ltd.
    Inventors: Shiro Sakai, Yukichi Takamatsu, Yuji Mori, Hiroyuki Naoi, Hong Xing Wang, Yoshiyasu Ishihama, Yutaka Amijima