Abstract: A terminal connecting mechanism includes a plate spring, an insulating housing having an accommodating portion to accommodate a fixed portion and an elastic portion of the plate spring, and a terminal electrode portion disposed in the accommodating portion. The accommodating portion includes a first opening to allow a conductor portion of an electric wire to be inserted into the accommodating portion, an electric wire insertion guide wall disposed from the first opening along an insertion direction of the electric wire, to guide the conductor portion, an inclined wall facing the electric wire insertion guide wall and being inclined toward the electric wire insertion guide wall along the insertion direction of the electric wire, wherein the fixed portion is fixed to the inclined wall, and a second opening to allow a jig to be inserted into the accommodating portion, thereby canceling contact between the elastic portion and the conductor portion.

Abstract: The present invention is a method for manufacturing a substrate for a solar cell composed of a single crystal silicon, including the steps of: producing a silicon single crystal ingot; slicing a silicon substrate from the silicon single crystal ingot; and subjecting the silicon substrate to low temperature thermal treatment at a temperature of 800° C. or more and less than 1200° C., wherein the silicon single crystal ingot or the silicon substrate is subjected to high temperature thermal treatment at a temperature of 1200° C. or more for 30 seconds or more before the low temperature thermal treatment. As a result, it is possible to provide a method for manufacturing a substrate for a solar cell that can prevent decrease in the minority carrier lifetime of the substrate even when the substrate has higher oxygen concentration.

Abstract: The present invention is a method for manufacturing an FZ silicon single crystal for a solar cell, including the steps of: pulling a CZ silicon single crystal doped with gallium by a Czochralski method; and float-zone processing a raw material rod, with the raw material rod being the CZ silicon single crystal, at 1.6 atmospheric pressure or more to manufacture the FZ silicon single crystal. As a result, it is possible to provide a method for manufacturing an FZ silicon single crystal for a solar cell that can decrease the amount of gallium dopant evaporated during the float-zone processing, thereby preventing the silicon single crystal from increasing the resistance while decreasing oxygen, which is inevitably introduced into a CZ crystal, and preventing formation of a B-O pair, which causes a problem to the characteristics of a solar cell.

Abstract: A solar cell having a P-type silicon substrate wherein one main surface is a light-receiving surface and another is a backside, a plurality of back surface electrodes formed on a part of the backside, an N-type layer in at least a part of the light-receiving surface, and contact areas in which the substrate contacts the electrodes; wherein the P-type silicon substrate is a silicon substrate doped with gallium and has a resistivity of 2.5 ?·cm or less; and a back surface electrode pitch Prm [mm] of the plurality of electrodes and the resistivity Rsub [?·cm] of the substrate satisfy the relation represented by the following formula (1). This provides a solar cell and a solar cell module having excellent conversion efficiency with resistance loss being prevented, with the solar cell using a substrate the light-induced degradation of which is eliminated. log(Rsub)??log(Pm)+1.0 ??(1).

Abstract: A solar cell has a P-type silicon substrate in which one main surface is a light-receiving surface and another main surface is a backside, a dielectric film on the backside, and an N-conductivity type layer in at least a part of the light-receiving surface of the P-type silicon substrate, wherein the P-type silicon substrate is a silicon substrate doped with gallium, and the backside of the P-type silicon substrate contains a diffused group III element. This provides a solar cell with excellent conversion efficiency provided with a gallium-doped substrate, and a method for manufacturing the same.

Abstract: The disclosed heat-treatment furnace, used in a semiconductor-substrate heat-treatment step, is characterized by the provision of a cylindrical core, both ends of which have openings sized so as to allow insertion and removal of semiconductor substrates. This reduces standby time between batches during consecutive semiconductor heat treatment, thereby improving productivity. Furthermore, the use of a simple cylindrical shape for the structure of the core reduces the frequency at which gas-introduction pipe sections fail, thereby decreasing the running cost of the heat-treatment process.

Abstract: The present invention is a solar cell comprising a gallium-doped silicon substrate having a p-n junction formed therein, wherein the silicon substrate is provided with a silicon thermal oxide film at least on the first main surface of main surfaces of the silicon substrate, the first main surface being a main surface having a p-type region, and the silicon substrate is further doped with boron. This provides a solar cell that can possess high conversion efficiency while suppressing the photo-degradation even though having a silicon thermal oxide film as a passivation film of the substrate surface, and a method for manufacturing such a solar cell.

Abstract: A solar cell includes: first and second conductivity type diffusion layers which are formed on a backside of a light-receiving surface of a substrate, first and second electrode portions, first and second electrode line portions, and first and a second electrode bus bar portions; a first insulator film which is formed to cover a side portion and a top of the second electrode portion in an intersection region of the second electrode portion and the first electrode bus bar portion, a second insulator film which is formed to cover a side portion and a top of the first electrode portion in an intersection region of the first electrode portion and the second electrode bus bar portion, wherein the second electrode portion is formed continuously in a line shape under the first insulator film, and the first electrode portion is formed continuously in a line shape under the second insulator film.

Abstract: Provided is a solar battery cell with low price, high reliability, and high conversion efficiency. A manufacturing method for the solar battery cell including the following processes. That is: forming and laminating a second conductive-type layer and an antireflection film on a first conductive-type semiconductor substrate; applying a conductive paste containing a conductive particle and a glass frit to a predetermined position of the antireflection film; firing the semiconductor substrate with the conductive paste applied thereto; and forming an electrode penetrating the antireflection film and electrically connected to the second conductive-type layer. The semiconductor substrate with the conductive paste applied thereto is consecutively subjected to heat treatment just after the firing instead of being returned to room temperature.

Abstract: Solar cell including: a semiconductor substrate of a first conductivity type having a region of the first conductivity type and region of a second conductivity type on the back side; a first finger electrode composed of a first contact portion and first current collector, a second finger electrode composed of a second contact portion and second current collector, a first bus bar electrode, a second bus bar electrode on the backside; an insulator film disposed at least in the area just under the first bus bar electrode and second bus bar electrode; wherein the electrical contact between the first current collector and first bus bar electrode as well as electrical contact between the second current collector and the second bus bar electrode are made on the insulator film; and first contact portion and the second contact portion are in a continuous line shape at least just under the insulator film.

Abstract: Provided is a switch that can be downsized. A switch is provided with a plunger, and an upper torsion spring configured to bias the plunger in a returning direction. The torsion spring has a first arm that extends to the plunger and abuts against the plunger. The plunger has a hole at a position into which the first arm is inserted. The hole is a through hole extending in a direction that is perpendicular to a direction in which the plunger moves, and is the same as a direction in which the first arm extends when viewed in the direction in which the plunger moves.

Abstract: Provided is a switch that can be downsized. A switch is provided with a plunger, two upper torsion springs that bias the plunger in a returning direction, housing-side contacts, and plunger-side contacts. One of the upper torsion springs is arranged on one side of a plane that includes an axis passing through a central portion of the plunger, and that is perpendicular to perpendicular lines M connecting the plunger-side contacts and the axis, and the other one of the upper torsion springs is arranged on the other side of the plane.

Abstract: Provided is a switch with excellent operability. A switch is provided with a plunger, a lower torsion spring in which a biasing direction changes according to the movement of the plunger. The lower torsion spring biases the plunger in a returning direction when the plunger is in a reference position, and biases the plunger in a direction different from the returning direction when the plunger is in an operation position.

Abstract: Provided is a switch that can reliably bring contacts into contact with each other with a small load, and can be prevented from malfunctioning. A switch is provided with a plunger, a lower torsion spring in which a biasing direction changes according to the movement of the plunger. The lower torsion spring biases the plunger in an opposite direction to a returning direction when the plunger is in the operation position, and biases the plunger in a direction different from the opposite direction to the returning direction when the plunger is in the reference position.

Abstract: The present invention relates to a method for manufacturing a solar cell having excellent long-term reliability and high efficiency, said method including: a step (7) for applying a paste-like electrode agent to an antireflection film formed on the light receiving surface side of a semiconductor substrate having at least a pn junction, said electrode agent containing a conductive material; and an electrode firing step (9) having local heat treatment (step (9a)) for applying heat such that at least a part of the conductive material is fired by irradiating merely the electrode agent-applied portion with a laser beam, and whole body heat treatment (step (9b)) for heating the whole semiconductor substrate to a temperature below 800° C.

Abstract: This solar cell production method involves productively forming an antireflection film comprising silicon nitride, said antireflection film having an excellent passivation effect. In an embodiment, a remote plasma CVD is used to form a first silicon nitride film on a semiconductor substrate (102) using the plasma flow from a first plasma chamber (111), then to form a second silicon nitride film, which has a different composition than the first silicon nitride film, using the plasma flow from a second plasma chamber (112), into which ammonia gas and silane gas have been introduced at a different flow ratio than that of the first plasma chamber (111). The plasma chambers (111, 112) have excitation parts (111a, 112a) that excite the ammonia gas, and activation reaction parts (111b, 112b) and a flow controller (113).

Abstract: Provided are a raisable-lowerable member capable of shortening a time required for assembling and disassembling of a crane, and a crane comprising the raisable-lowerable member. The raisable-lowerable member comprises: a boom attachable to an upper slewing body of the crane turnably about a boom-pivot-turn-axis in a raising-lowering direction; and a mast to be driven so as to be turned about a mast pivot-turn-axis parallel to the boom-pivot-turn-axis. The boom includes a boom body, a boom foot joined to a basal end of the boom body and adapted to be attached to the upper slewing body turnably about the boom-pivot-turn-axis, and a mast mounting portion joined to the basal end of the boom body. The mast has a basal end which includes a mast foot to be attached to the mast mounting portion turnably about the mast pivot-turn-axis.

Abstract: The disclosed heat-treatment furnace, used in a semiconductor-substrate heat-treatment step, is characterized by the provision of a cylindrical core, both ends of which have openings sized so as to allow insertion and removal of semiconductor substrates. This reduces standby time between batches during consecutive semiconductor heat treatment, thereby improving productivity. Furthermore, the use of a simple cylindrical shape for the structure of the core reduces the frequency at which gas-introduction pipe sections fail, thereby decreasing the running cost of the heat-treatment process.