Abstract: A semiconductor device in which chips are resin-molded, including: frames having front and back surfaces and die pads; power chips mounted on the surfaces of the die pads; an insulation resin sheet having a first and a second surfaces which are opposed against each other, the resin sheet being disposed such that the back surfaces of the die pads contact the first surface of the resin sheet; and a mold resin applied on the first surface of the resin sheet so as to seal up the power chips. The thermal conductivity of the resin sheet is larger than that of the mold resin.

Abstract: A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in the vacuum vessel and a heater for heating a circumferential wall of the processing chamber, wherein a substrate is arranged in the processing chamber and the substrate is vacuum-processed in the processing chamber, characterized in that the vacuum-processing apparatus has a cooling plate located outside the processing chamber and arranged at a position to oppose the circumferential wall of the processing chamber for cooling the circumferential wall of the processing chamber, and a mechanism for moving the cooling plate so as to change a distance between the cooling plate and the circumferential wall of the processing chamber. A vacuum-processing method for performing a surface treatment for a substrate using the vacuum-processing apparatus.

Abstract: A process for preparing olefinic living polymers having a molecular weight distribution (Mw/Mn) of 1 to 1.3, comprising polymerizing an olefinic monomer having 2 to 20 carbon atoms at low temperatures in the presence of a catalyst comprising (A) a hafnium or zirconium-containing compound having one or two cyclopentadienyl backbones, (B) a triphenyl boron compound or a tetraphenyl borate compound and optionally (C) a specific mono-, di- or trialkylaluminum compound. When the catalyst comprising the zirconium-containing compound is prepared by further using a titanium-containing compound (D), the polymerization temperature can be raised.

Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

Abstract: A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2|≦|V1|≦50×|V2|, where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.

Abstract: A modified polypropylene which is a polypropylene having a value of racemic diad fraction [r] in a specific range and modified with a specific compound, e.g., (meth)acrylic acids, and their derivatives or styrene derivatives to have well-balanced properties of affinity for polypropylene-based materials, thermal stability, and high solubility in organic solvents; and a process for producing same. More particularly, the modified polypropylene which is a polypropylene having a value of racemic diad fraction [r] of 0.51 to 0.88, determined by 13C-NMR analysis, and chemically modified with a compound serving as a modifier, e.g., (meth)acrylic acids, and their derivatives or styrene derivatives; and the process for producing the modified polypropylene, wherein the polypropylene having a value of racemic diad fraction [r] in the above range is reacted with at least one type of the compound serving as the modifier in the presence of a radical initiator.

Abstract: The present invention relates to a control method and a control apparatus for controlling two (two kinds of) driver mechanisms for relatively moving a main spindle along a single axis in an NC machine tool whereby the straightness of the work-piece machined surface can be finished with high accuracy. The control method of the invention controls operations of two driver mechanisms (124,125,126) for relatively moving a main spindle (104) along a single axis in an NC machine tool (100), and one of the driver mechanisms (124 or 125,126) is driven to relatively move the main spindle (104) in a positive direction along the axis during machining, the other driver mechanism (124 or 125,126) is driven to relatively move the main spindle (104) in a negative direction along the axis during machining.

Abstract: A method for forming a deposited film, comprising generating plasma in a plurality of successive vacuum containers and continuously forming a deposited film on a belt-like substrate while continuously moving the substrate in its longitudinal direction, wherein an opening of a discharge container is adjusted with an opening adjusting plate having a shape set so as to reduce ununiformity of a deposited film thickness in a width direction of the substrate on the basis of a measurement of a deposition rate distribution. Accordingly, there is provided a method and an apparatus for forming a deposited film which are capable of producing a photovoltaic element without ununiformity in characteristics by depositing semiconductor layers without ununiformity in thickness and quality.

Abstract: A butadiene polymer (i) having a cis bond unit content of at least 50% based on the total butadiene units, a number average molecular weight (Mn) of 1,000 to 10,000,000, and at least 80%, based on the total molecular chains, of living chains containing a transition metal of group IV of the Periodic table at a terminal thereof; a polymer (ii) obtained by modifying terminals of the polymer (i); and a polymer (iii) obtained by coupling the polymers (i). These polymers (i), (ii) and (iii) are obtained by polymerizing a conjugated diene monomer alone or with a copolymerizable monomer at a specific temperature in the presence of a catalyst comprising a compound (A) of a transition metal of group IV of the periodic table having a cyclopentadienyl structure and a co-catalyst (B) selected from organoaluminum-oxy compound (a) and others and optionally further by contacting the resultant polymer with a terminal modifier or a coupling agent.

Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

Abstract: A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2|≦|V1|≦50×|V2|, where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.

Abstract: A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in said vacuum vessel and a heater for heating a circumferential wall of said processing chamber, wherein a substrate is arranged in said processing chamber and said substrate is vacuum-processed in said processing chamber, characterized in that said vacuum-processing apparatus has a cooling plate arranged at a position to oppose said circumferential wall of said processing chamber for cooling said circumferential wall of said processing chamber, and a mechanism for moving said cooling plate so as to change a distance between said cooling plate and said circumferential wall of said processing chamber.

Abstract: A substrate-processing method comprising transporting a substrate to pass through a plurality of processing spaces communicated with each other while processing said substrate in each processing space, characterized in that based on an inner pressure of (a) one of said plurality of processing spaces, said inner pressure of said processing space (a) and an inner pressure of (b) at least one of the processing spaces arranged before or after said processing space (a) are controlled.

Abstract: A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in the vacuum vessel and a heater for heating a circumferential wall of the processing chamber, wherein a substrate is arranged in the processing chamber and the substrate is vacuum-processed in the processing chamber, characterized in that the vacuum-processing apparatus has a cooling plate arranged at a position to oppose the circumferential wall of the processing chamber for cooling the circumferential wall of the processing chamber, and a mechanism for moving the cooling plate so as to change a distance between the cooling plate and the circumferential wall of the processing chamber.

Abstract: A catalyst comprising an organoaluminum compound and a vanadium chelate compound having the lability to cause olefins to undergo living coordination polymerization is contacted with a terminal diolefin to obtain a catalyst for living polymer production. When the above contact is:conducted in the presence of a cycloolefin or an internal olefin, the yield of a living polymer can be improved. By modifying all ends of the living polymer obtained, a telechelic olefin polymer is obtained in which all the polymer chains are modified with functional groups.

Abstract: The present invention relates to a control method and a control apparatus for controlling two (two kinds of) driver mechanisms for relatively moving a main spindle along a single axis in an NC machine tool whereby the straightness of the work-piece machined surface can be finished with high accuracy. The control method of the invention controls operations of two driver mechanisms (124,125,126) for relatively moving a main spindle (104) along a single axis in an NC machine tool (100), and one of the driver mechanisms (124 or 125,126) is driven to relatively move the main spindle (104) in a positive direction along the axis during machining, the other driver mechanism (124 or 125,126) is driven to relatively move the main spindle (104) in a negative direction along the axis during machining.

Abstract: A method for forming a deposited film, comprising generating plasma in a plurality of successive vacuum containers and continuously forming a deposited film on a belt-like substrate while continuously moving the substrate in its longitudinal direction, wherein an opening of a discharge container is adjusted with an opening adjusting plate having a shape set so as to reduce ununiformity of a deposited film thickness in a width direction of the substrate on the basis of a measurement of a deposition rate distribution. Accordingly, there is provided a method and an apparatus for forming a deposited film which are capable of producing a photovoltaic element without ununiformity in characteristics by depositing semiconductor layers without ununiformity in thickness and quality.

Abstract: A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in said vacuum vessel and a heater for heating a circumferential wall of said processing chamber, wherein a substrate is arranged in said processing chamber and said substrate is vacuum-processed in said processing chamber, characterized in that said vacuum-processing apparatus has a cooling plate arranged at a position to oppose said circumferential wall of said processing chamber for cooling said circumferential wall of said processing chamber, and a mechanism for moving said cooling plate so as to change a distance between said cooling plate and said circumferential wall of said processing chamber.

Abstract: A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.

Abstract: To provide an apparatus for forming a deposited film, which is a parallel plate electrode type CVD apparatus, with a discharge vessel receiving a material gas flowing therein and discharging air therefrom, decomposing the material gas by the aid of a plasma generated therein, and depositing the film on the substrate, in which the exhaust port of the material gas exhaust means has an opening wider in the lateral direction than the parallel plate electrode. This structure diminishes the stagnant region of the material gas during the deposited film forming process and controls formation of by-products, to deposit the film uniform in quality and thickness.