Abstract: In a snow accretion test method, a snow accumulation step of accumulating snow on a specimen, and a snow accretion step of freezing snow accumulated on the specimen in a state where snow is not supplied to the specimen are performed. The snow accumulation step and the snow accretion step are repeatedly performed. In the snow accretion step, the ambient temperature of the specimen is adjusted to a temperature lower than the ambient temperature in the snow accumulation step.

Abstract: A snow environment test apparatus includes an injector including a two-fluid nozzle, a temperature setting section for setting an indoor temperature, an air conditioner for cooling an inside of a test chamber, a temperature control section for controlling the air conditioner, a water flow rate setting section for setting a flow rate of water to be supplied to the injector, a water supply section for supplying water having a predetermined temperature to the injector, a snow quality selection section for selecting snow quality, a related information storage section that stores information in which a temperature in the test chamber, a flow rate of water to be supplied to the injector, a pressure of air to be supplied to the injector, and a snow quality are related with each other, and a pressure regulation section for regulating the pressure of the air to be supplied to the injector to a pressure obtained by using the information stored in the related information storage section.

Abstract: A snow environment test apparatus includes a first nozzle that injects water particles, a second nozzle that injects water particles smaller in size than the water particles from the first nozzle, an air conditioner that regulates a temperature in a test chamber to a set temperature, a state selection section that sets a state of snow to be caused to fall, and a flow rate regulation valve that regulates a ratio between quantities of water to be supplied to the first nozzle and to the second nozzle for obtaining the state of the snow set by the state selection section at the set temperature as a temperature at which a snow environment is obtained.

Abstract: A front pillar trim mounting structure has a front pillar (10), a front pillar trim (30), an airbag (60), and an assist grip (70). The front pillar is provided in the front portion of a vehicle. The front pillar trim (30) covers the front pillar (10) from the inner side of the vehicle. The airbag (60) is located between the front pillar (10) and the front pillar trim (30). The assist grip (70) is attached to the front pillar (10), and is installed on a vehicle inner surface of the front pillar trim (30). The front pillar trim (30) has a first front pillar trim (40), a second front pillar trim (50), and an engagement mechanism (54). The assist grip (70) is installed on the first front pillar trim (40). The second front pillar trim (50) is provided with an opening where the first front pillar trim (40) is installed. The engagement mechanism (54) detachably connects the second front pillar trim (50) to first front pillar trim (40).

Abstract: In a vehicle package tray (100) disposed in the back of a rear seat of a vehicle, a sheet-shaped glass fiber mats (108), in which urethane resin (110) is impregnated, are overlapped on both surfaces of a semi-hard urethane foam layer (102), a front surface material (104) is overlapped on the surface of one glass fiber mat (108), in which the urethane resin (110) is impregnated, via a first adhesive film (106), back material (114) is overlapped on the surface of the other glass fiber mat (108), in which the urethane resin (110) is impregnated, via a second adhesive film (112), and the multi-overlapped object obtains a sound absorbing performance by being formed into a three-dimensional shape by being pinched and fixed by a press die, heated, pressurized, and thereby fused.

Abstract: A front pillar trim mounting structure has a front pillar (10), a front pillar trim (30), an airbag (60), and an assist grip (70). The front pillar is provided in the front portion of a vehicle. The front pillar trim (30) covers the front pillar (10) from the inner side of the vehicle. The airbag (60) is located between the front pillar (10) and the front pillar trim (30). The assist grip (70) is attached to the front pillar (10), and is installed on a vehicle inner surface of the front pillar trim (30). The front pillar trim (30) has a first front pillar trim (40), a second front pillar trim (50), and an engagement mechanism (54). The assist grip (70) is installed on the first front pillar trim (40). The second front pillar trim (50) is provided with an opening where the first front pillar trim (40) is installed. The engagement mechanism (54) detachably connects the second front pillar trim (50) to first front pillar trim (40).

Abstract: In a vehicle package tray (100) disposed in the back of a rear seat of a vehicle, a sheet-shaped glass fiber mats (108), in which urethane resin (110) is impregnated, are overlapped on both surfaces of a semi-hard urethane foam layer (102), a front surface material (104) is overlapped on the surface of one glass fiber mat (108), in which the urethane resin (110) is impregnated, via a first adhesive film (106), back material (114) is overlapped on the surface of the other glass fiber mat (108), in which the urethane resin (110) is impregnated, via a second adhesive film (112), and the multi-overlapped object obtains a sound absorbing performance by being formed into a three-dimensional shape by being pinched and fixed by a press die, heated, pressurized, and thereby fused.

Abstract: A ZnO-based transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions. The transparent conductive film produced by growing ZnO doped with a group III element oxide on a substrate has a ZnO (002) rocking curve full width at half maximum of about 13.5° or more. ZnO is doped with a group III element oxide so that the ratio of the group III element oxide in the transparent conductive film is about 7% to about 40% by weight. The transparent conductive film is formed on the substrate with a SiNx thin film provided therebetween. The transparent conductive film is formed on the substrate by a thin film formation method with a bias voltage applied to the substrate.

Abstract: A ZnO-based transparent conductive film has practicable moisture resistance, desired characteristics of a transparent conductive film, and excellent economy. The transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions. The transparent conductive film produced by growing ZnO doped with a group III element oxide on a substrate has a ZnO (002) rocking curve full width at half maximum of about 13.5° or more. ZnO is doped with a group III element oxide so that the ratio of the group III element oxide in the transparent conductive film is about 7% to about 40% by weight. The transparent conductive film is formed on the substrate with a SiNx thin film provided therebetween. The transparent conductive film is formed on the substrate by a thin film formation method with a bias voltage applied to the substrate.

Abstract: A gate electrode is formed in the following manner. A first resist layer having a first opening is formed on a semiconductor substrate. A second resist layer having a second opening larger than the first opening is formed on the first resist layer. A first conductor layer containing a high-melting-point metal is formed. Subsequently, a second conductor layer containing low-resistance metal is formed, and then the first conductor layer within the second opening is removed by etching. Next, the second resist layer is removed by a lift-off process, and finally the first resist layer is removed by ashing.

Abstract: A gate electrode is formed in the following manner. A first resist layer having a first opening is formed on a semiconductor substrate. A second resist layer having a second opening larger than the first opening is formed on the first resist layer. A first conductor layer containing a high-melting-point metal is formed. Subsequently, a second conductor layer containing low-resistance metal is formed, and then the first conductor layer within the second opening is removed by etching. Next, the second resist layer is removed by a lift-off process, and finally the first resist layer is removed by ashing.

Abstract: The invention provides a semiconductor device with a passivation film provided on a surface thereof, said passivation film comprising a SiON layer in contact with the surface of said semiconductor device, and a Si3N4 layer provided at the outer side of said SiON layer, chraracterized in that said passivation film has an outermost layer of Si3N4 and said outermost layer has a portion in contact with said semiconductor device or the exposed area of said SiON layer is nitrided. The semiconductor device has a high bonding strength between the passivation film and the semiconductor device and high moisture resistance.

Abstract: A heterostructure insulated-gate field effect transistor comprises a channel layer, barrier layer and a contact layer. The barrier layer is made of a material having an electron affinity smaller than that of the channel layer and equal to that of the contact layer. Due to the single heterostructure, the series resistance between the channel layer and the source (drain) electrode can be decreased without employing complicated selective ion implanting or selective epitaxial growing method.

Abstract: A tungsten alloy is used as a material of an electrode wire for electric spark cutting. The tungsten alloy comprises one or more elements selected from the group consisted of Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and oxides thereof. An electrode wire made of such a tungsten alloy handles an improved processing speed and the accuracy of the cut surface is also improved. The number of failures due to breaking of the electrode wire has been reduced and the tensile strength of the electrode wire has been increased. The same effect can be attained when a molybdenum alloy containing one or more oxides of elements selected from the group consisted of Al, Si and K is used as an alloying component in the alloy for making the electrode wire for electric spark cutting.

Abstract: A thin film EL element comprises a substrate, an electrode formed on the substrate, a ZnO insulation layer which is formed on the electrode and which has crystalline orientability, a light emitting layer formed on the ZnO insulation layer having crystallinity, and a second electrode formed on the light emitting layer. The ZnO insulation layer having crystalline orientability, is formed as a sublayer for the light emitting layer, and is made of a material having its c-axis oriented perpendicular to the substrate.

Abstract: A one-dimensional pyroelectric sensor array comprises (1) a base plate made of a pyroelectric material; a plurality of strip elements made of pyroelectric material having a heat-sensitive region at a free end thereof, each supported only at the other end to the base plate to form an integrated structure with the base plate; and (2) one pair of detecting electrodes formed on the heat-sensitive region of the free end of each strip element.