Patents by Inventor Hiroyuki Steven Tomosawa

Hiroyuki Steven Tomosawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5959409
    Abstract: Non-bonded ceramic protection is provided for metal surfaces in a plasma processing chamber, particularly heated metal electrode surfaces, in a plasma processing chamber, to prevent or inhibit attack of the heated metal surfaces by chemically aggressive species generated in the plasma during processing of materials, without bonding the ceramic material to the metal surface. In accordance with the invention the ceramic protection material comprises a thin cover material which is fitted closely, but not bonded, to the heated metal. This form of ceramic protection is particularly useful for protecting the surfaces of glow discharge electrodes and gas distribution apparatus in plasma process chambers used for processing semiconductor substrates to form integrated circuit structures.
    Type: Grant
    Filed: August 13, 1997
    Date of Patent: September 28, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Charles N. Dornfest, John M. White, Craig A. Bercaw, Hiroyuki Steven Tomosawa, Mark A. Fodor
  • Patent number: 5680013
    Abstract: Non-bonded ceramic protection is provided for metal surfaces in a plasma processing chamber, particularly heated metal electrode surfaces, in a plasma processing chamber, to prevent or inhibit attack of the heated metal surfaces by chemically aggressive species generated in the plasma during processing of materials, without bonding the ceramic material to the metal surface. In accordance with the invention the ceramic protection material comprises a thin cover material which is fitted closely, but not bonded, to the heated metal. This form of ceramic protection is particularly useful for protecting the surfaces of glow discharge electrodes and gas distribution apparatus in plasma process chambers used for processing semiconductor substrates to form integrated circuit structures.
    Type: Grant
    Filed: March 15, 1994
    Date of Patent: October 21, 1997
    Assignee: Applied Materials, Inc.
    Inventors: Charles N. Dornfest, John M. White, Craig A. Bercaw, Hiroyuki Steven Tomosawa, Mark A. Fodor