Patents by Inventor Hiroyuki Tosaka

Hiroyuki Tosaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7026858
    Abstract: A switch semiconductor integrated circuit having a switch FET for controlling passage of a high-frequency signal so that the switch FET is switched between on-operation and off-operation. The switch semiconductor integrated circuit includes a logic control section using of an inverter circuit which generates the switching signal in accordance with a control signal applied from outside. The inverter circuit uses a junction-type FET in which the gate of the switch FET is connected to an output end of the inverter circuit via a gate resistor, and the output end is connected to a coupling capacitor which couples a part of the high-frequency signal. The coupled high-frequency signal is rectified by an equivalent diode between the gate and drain of the junction-type FET, and is superposed onto a DC voltage applied to the gate of the switch FET.
    Type: Grant
    Filed: March 19, 2003
    Date of Patent: April 11, 2006
    Assignee: New Japan Radio Co., Ltd.
    Inventor: Hiroyuki Tosaka
  • Publication number: 20040077150
    Abstract: A switch semiconductor integrated circuit having a switch FET for controlling passage of a high-frequency signal so that the switch FET is switched between on-operation and off-operation. The switch semiconductor integrated circuit includes a logic control section using of an inverter circuit which generates the switching signal in accordance with a control signal applied from outside, the inverter circuit uses a junction-type FET the gate of the switch FET is connected to an output end of the inverter circuit via a gate resistor, and the output end is connected to a coupling capacitor which couples a part of the high-frequency signal. The coupled high-frequency signal is rectified by an equivalent diode between the gate and drain of the junction-type FET, and is superposed onto a DC voltage applied to the gate of the switch FET.
    Type: Application
    Filed: March 19, 2003
    Publication date: April 22, 2004
    Applicant: NEW JAPAN RADIO CO., LTD.
    Inventor: Hiroyuki Tosaka