Abstract: A method of manufacturing a semiconductor device is provided. The method includes providing a first layer having a first surface and a second layer having a second surface orthogonal to the first surface in a vertical direction, forming an inhibitor layer conformally on the first surface and the second surface, exposing the second surface by selectively removing the inhibitor layer on the second surface among the first surface and the second surface, the exposing of the second surface may include selectively removing an edge portion of the inhibitor layer on the first surface, the edge portion contacting the second surface, and forming an interest layer on the exposed second surface.

Abstract: A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):

Abstract: To manufacture an integrated circuit (IC) device, a structure in which a first material film including silicon atoms and nitrogen atoms and a second material film devoid of nitrogen atoms is formed on a substrate. A carbonyl compound having a functional group without an ?-hydrogen is applied to the structure, and thus, an inhibitor is selectively formed only on an exposed surface of the first material film from among the first material film and the second material film.

Abstract: An organometallic adduct compound and a method of manufacturing an integrated circuit device, the organometallic adduct compound being represented by General Formula (I):

Abstract: An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),

Abstract: Materials for fabricating a thin film that has improved quality and productivity are provided. The materials may include a Group 5 element precursor of formula (1): M1 may be a Group 5 element, each of R1 to R10 independently may be a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or f7onnula (2), R11 may be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L1 may be an alkyl group, an alkylamino group, an alkoxy group or an alkylsilyl group, each of which may have 1 to 5 carbon atoms and may be substituted or unsubstituted. Formula (2) may have a structure of Each of Ra to Rc independently may be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms.

Abstract: A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):

Abstract: An organometallic adduct compound and a method of manufacturing an integrated circuit (IC) device, the organometallic adduct compound being represented by General formula (I): in General formula (I), R1, R2, and R3 are each independently a C1 to C5 alkyl group, at least one of R1, R2, and R3 being a C1 to C5 alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, M is a niobium atom, a tantalum atom, or a vanadium atom, X is a halogen atom, m is an integer of 3 to 5, and n is 1 or 2.

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

Abstract: The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), R1 and R2 each independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and R3 denotes a methyl group or ethyl group. It is preferable for R1 and R2 to be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

Abstract: The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), R1 and R2 each independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and R3 denotes a methyl group or ethyl group. It is preferable for R1 and R2 to be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.

Abstract: Disclosed is an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), R1 and R2 each represent straight or branched C2-C5 alkyl, and R3 represent methyl or ethyl. R1 and R2 are each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD.

Abstract: The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R1 to R3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

Abstract: Disclosed is an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), R1 and R2 each represent straight or branched C2-C5 alkyl, and R3 represent methyl or ethyl. R1 and R2 are each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD.

Abstract: The object is to provide a light-emitting transistor material which is high in both luminescent property and mobility when used as a light-emitting transistor device. A light-emitting transistor device is provided in which light emission of a specific pyrene-based organic compound is used for a light-emitting layer of a transistor device.

Abstract: An object is to provide a pyrene based compound that is good in both properties of light emission and mobility when the compound is used as a light emitting transistor element; and a light emitting transistor element wherein this specific pyrene based compound is used. A pyrene based compound represented by the following chemical formula (1) is used as a main component of a light emitting layer in a light emitting transistor element: (wherein R1 represents a group selected from a heteroaryl group which may have a substituent, an aryl group which may have a substituent except a phenyl group which does not have any substituent, an alkyl group which may have a substituent and has a main chain having 1 to 20 carbon atoms, an alkenyl group which may have a substituent, an alkynyl group which may have a substituent, a silyl group which may have a substituent, and a halogen atom.

Abstract: It is an object to provide an organic fluorescent substance which can be used in a light emitting transistor element and an organic EL element. The invention provides a light emitting transistor element or an organic electroluminescence element wherein a specific asymmetric pyrene based compound is used in a light emitting layer in the light emitting transistor element, or in a light emitting layer, a hole transporting layer or an electron transporting layer in the organic EL element.