Abstract: A piezoelectric element includes a substrate having a first surface with a predetermined orientation; a lower electrode layered on the first surface of the substrate; a piezoelectric thin film layered on the lower electrode and having a piezoelectric body; and an upper electrode layered on the piezoelectric thin film. A voltage is to be impressed between the lower electrode and the upper electrode to deform the piezoelectric thin film. The piezoelectric thin film is epitaxially grown on the lower electrode using a physical vapor deposition or a chemical vapor deposition.

Abstract: A liquid component sensor includes: an infrared light source; a detection cell including: two substrates made of material for penetrating an infrared light therethrough and stacked each other; a passage for flowing liquid arranged between facing surfaces of the substrates; and a detection portion for detecting the liquid provided by at least a part of the passage; a spectrometer for dispersing light penetrating the detection cell; and a light detector for detecting dispersed light. Each substrate includes outside and facing surfaces, so that two substrates provide four surfaces totally. The detection cell further includes a filter for passing the infrared light having a predetermined wavelength selectively. The filter is disposed on at least one of four surfaces at a predetermined position, which corresponds to at least the detection portion.

Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.

Abstract: A lens reflecting a light of a predetermined wavelength, or transmitting and condensing or diverging the light is provided. The lens includes a substrate, and a quasi-periodic structure layer. A plane of the quasi-periodic structure layer is divided into unit cells and is filled with the unit cells in a two-dimensional period. The unit cell has a first region and a second region. An occupancy rate is changed as a distance from a center of the substrate. A resonance mode is defined by a relationship between the occupancy rate and the period length. A lowest order resonance mode is defined by the resonance mode. The period length is set to a predetermined value within a predetermined range including an optimum value. Another lens is provided. A minimum occupancy rate is defined by a smallest occupancy rate. A variation range of the occupancy rate changes across the minimum occupancy rate.

Abstract: A Fabry-Perot interferometer includes an input mirror and an output mirror arranged facing the input mirror via a gap. Each mirror includes a pair of high-refractive layers and a space layer arranged selectively between the high-refractive layers. At least one of an input-side bridge part and an output-side bridge part arranged crossing the gap, is movable as a membrane. Each bridge part includes a transmission portion and a periphery portion. Each transmission portions includes a mirror element in which the space layer is sandwiched by the pair of high-refractive layers. In a second direction perpendicular to the first direction, the mirror element of the input mirror has a width larger than seven times of a maximum wavelength of a transmission light output from the output mirror, and functions as a diffraction restriction mirror.

Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.

Abstract: A piezoelectric element includes a substrate having a first surface with a predetermined orientation; a lower electrode layered on the first surface of the substrate; a piezoelectric thin film layered on the lower electrode and having a piezoelectric body; and an upper electrode layered on the piezoelectric thin film. A voltage is to be impressed between the lower electrode and the upper electrode to deform the piezoelectric thin film. The piezoelectric thin film is epitaxially grown on the lower electrode using a physical vapor deposition or a chemical vapor deposition.

Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.

Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.

Abstract: An optical scanning device has a reflecting portion and a supporting body for supporting the reflecting portion. The reflecting portion has a reflecting surface for reflecting light beam. A pair of outside beam members is arranged between the reflecting portion and the supporting body in a longitudinal direction of the device. The device also has a first driving portion, one end of which is connected to the supporting body, while the other end of which is connected to a driving point of the reflecting portion. When the first driving portion is inflected, the reflecting portion is oscillated in a twisting vibration manner at a first axis. The driving point of the reflecting portion is located at a position separated from the first axis.

Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.

Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.

Abstract: A Fabry-Perot interferometer includes an input mirror and an output mirror arranged facing the input mirror via a gap. Each mirror includes a pair of high-refractive layers and a space layer arranged selectively between the high-refractive layers. At least one of an input-side bridge part and an output-side bridge part arranged crossing the gap, is movable as a membrane. Each bridge part includes a transmission portion and a periphery portion. Each transmission portions includes a mirror element in which the space layer is sandwiched by the pair of high-refractive layers. In a second direction perpendicular to the first direction, the mirror element of the input mirror has a width larger than seven times of a maximum wavelength of a transmission light output from the output mirror, and functions as a diffraction restriction mirror.

Abstract: A liquid component sensor includes: an infrared light source; a detection cell including: two substrates made of material for penetrating an infrared light therethrough and stacked each other; a passage for flowing liquid arranged between facing surfaces of the substrates; and a detection portion for detecting the liquid provided by at least a part of the passage; a spectrometer for dispersing light penetrating the detection cell; and a light detector for detecting dispersed light. Each substrate includes outside and facing surfaces, so that two substrates provide four surfaces totally. The detection cell further includes a filter for passing the infrared light having a predetermined wavelength selectively. The filter is disposed on at least one of four surfaces at a predetermined position, which corresponds to at least the detection portion.

Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.

Abstract: In a semiconductor module, a first heat sink is disposed on a rear surface of a first semiconductor chip constituting an upper arm, and a second heat sink is disposed on a front surface of the first semiconductor chip through a first terminal. A third heat sink is disposed on a rear surface of a second semiconductor chip constituting a lower arm, and a fourth heat sink is disposed on a front surface of the second semiconductor chip through a second terminal. A connecting part for connecting between the upper arm and the lower arm is integral with the first terminal, and is connected to the third heat sink while being inclined relative to the first terminal.

Abstract: In a semiconductor module, a first heat sink is disposed on a rear surface of a first semiconductor chip constituting an upper arm, and a second heat sink is disposed on a front surface of the first semiconductor chip through a first terminal. A third heat sink is disposed on a rear surface of a second semiconductor chip constituting a lower arm, and a fourth heat sink is disposed on a front surface of the second semiconductor chip through a second terminal. A connecting part for connecting between the upper arm and the lower arm is integral with the first terminal, and is connected to the third heat sink while being inclined relative to the first terminal.

Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.

Abstract: A temperature sensor includes a semiconductor substrate and a quantum well structural part disposed on the semiconductor substrate. The semiconductor substrate is made of a plurality of elements. The quantum well structural part has a resistance value that changes with temperature. The quantum well structural part includes a plurality of semiconductor layers made of the elements. The semiconductor layers include a plurality of quantum barrier layers and a quantum well layer disposed between the quantum barrier layers. When the semiconductor substrate has a lattice constant “a,” each of the quantum barrier layers has a lattice constant “b,” and the quantum well layer has a lattice constant “c,” the semiconductor substrate, the quantum barrier layers, and the quantum well layer satisfy a relationship of b<a<c or c<a<b.

Abstract: A Fabry-Perot interferometer and a manufacturing method of the same are disclosed. The Fabry-Perot interferometer includes a first mirror structure and a second mirror structure opposed to each other with a gap therebetween. A first mirror and a first electrode of the first mirror structure are electrically insulated from each other, or, a second mirror and a second electrode of the second mirror structure are electrically insulated from each other. In a state of voltage application between the first and second electrode, a distance “dmi” between the first mirror and the second mirror is shorter than a distance “dei” between a first-electrode-inclusive-portion and a second-electrode-inclusive-portion.