Abstract: A substrate-container measuring device has a kinematic plate 10 having securing pins 12 provided at positions defined by the SEMI standards. There is provided an optical distance-measuring sensor 14, in which a relative position between the optical distance-measuring sensor 14 and the kinematic plate 10 is fixed. A substrate-container measuring jig 20 is placed on the kinematic plate 10. The substrate-container measuring jig 20 has a base plate 22 to be placed on the kinematic plate 10, and a slide plate 24 that is slidable over the base plate 22. The base plate 22 has a group of grooves which uniquely determine a relative position between the base plate 22 and the kinematic plate 10 as a result of being fitted with the corresponding securing pins 12.

Abstract: A substrate container having substrates stored therein and sealed with a door is placed onto a load port apparatus provided on a substrate processing system, and a door of the load port apparatus is docked with the door of the substrate container. An inside of the substrate container is pressurized before opening of the door of the substrate container before the door of the substrate container is opened and the substrates stored in the substrate container is transported to the substrate processing system.

Abstract: A substrate-container measuring device has a kinematic plate 10 having securing pins 12 provided at positions defined by the SEMI standards. There is provided an optical distance-measuring sensor 14, in which a relative position between the optical distance-measuring sensor 14 and the kinematic plate 10 is fixed. A substrate-container measuring jig 20 is placed on the kinematic plate 10. The substrate-container measuring jig 20 has a base plate 22 to be placed on the kinematic plate 10, and a slide plate 24 that is slidable over the base plate 22. The base plate 22 has a group of grooves which uniquely determine a relative position between the base plate 22 and the kinematic plate 10 as a result of being fitted with the corresponding securing pins 12.

Abstract: A substrate container having substrates stored therein and sealed with a door is placed onto a load port apparatus provided on a substrate processing system, and a door of the load port apparatus is docked with the door of the substrate container. An inside of the substrate container is pressurized before opening of the door of the substrate container before the door of the substrate container is opened and the substrates stored in the substrate container is transported to the substrate processing system.

Abstract: A vacuum processing chamber preventing corrosion of a magnetic seal means and removing the heavy metals, organic matter, etc. produced by the corrosion, including a vacuum processing chamber, a rotated member (for example, a susceptor and a wafer holder), a rotary shaft penetrating one side of the vacuum chamber and rotating the rotated member, and a cavity being defined between an inner wall of the magnetic seal means and the rotary shaft, said magnetic seal means maintaining the air-tightness in the vacuum processing chamber by using a magnetic fluid in the cavity; a gas inlet introducing a barrier gas (for example, an inert gas like N2, Ar, or He or an inert gas having a slight amount of O2 added) to the cavity; and a gas outlet extracting a gas inside the cavity.

Abstract: A process for producing a semiconductor device which includes a step of drawing out the impurities contained in the electrode film and/or insulating film and contributing to the growth of the insulating film before the heat treatment for activating the electrode film. The step of drawing out the impurities is a step of preliminary heat treatment at a temperature at least the film-forming temperature of the electrode film and no more than the growth temperature of the insulating film. The preliminary heat treatment is preferably performed at a temperature of 450.degree. C. to 800.degree. C., more preferably 450.degree. C. to 700.degree. C. The preliminary heat treatment may be performed after the formation of the electrode film or may be performed during the formation of the electrode film after each formation of one or more thin film layers for forming the electrode film.