Abstract: An attribute-value extraction unit (101) extracts as a plurality of model-generation attribute values, a plurality of attribute values belonging to an attribute associated with a monitoring subject for anomaly detection. A division-data generation unit (102) extracts for each model-generation attribute value, a normal event associated with the model-generation attribute value from normal data indicating a plurality of normal events each of which is found out to be normal, each of which is associated with one attribute value of the plurality of attribute values, and each of which includes a plurality of characteristics, and generates for each model-generation attribute value, division data indicating the extracted normal event. A characteristic selection unit (103) selects a combination of characteristics to be used for generation of a normal model to be used for anomaly detection, from a plurality of characteristics included in a plurality of normal events indicated in a plurality of pieces of division data.

Abstract: An attribute-value acquisition unit (203) acquires an attribute value of an attribute associated with a monitoring subject for anomaly detection. A normal-model acquisition unit (204) acquires from among a plurality of normal models generated corresponding to a plurality of attribute values, a normal model generated corresponding to the attribute value acquired by the attribute-value acquisition unit (203). An anomaly detection unit (205) performs the anomaly detection, using the normal model acquired by the normal-model acquisition unit (204).

Abstract: The present invention relates to a security device which performs processes such as authentication or cryptography, for example a security device for securely holding a key used in a cryptographic process, and a security method therefore.

Abstract: A classification unit classifies, per attack log data of a plurality of pieces of attack log data, one or more pieces of log information included in the attack log data, by value set consisting of a value of a first element and a value of a second element, thereby generating one or more log information groups. An integration unit integrates, per log information group, one or more pieces of log information included in the log information group, thereby generating integrated data. An extraction unit extracts, per value set, in one or more value sets, that is common among the plurality of pieces of attack log data, common information from a plurality of pieces of integrated data corresponding to the plurality of pieces of attack log data. A generation unit generates one or more attack detection rules based on one or more pieces of common information.

Abstract: The present invention relates to a security device which performs processes such as authentication or cryptography, for example a security device for securely holding a key used in a cryptographic process, and a security method therefore.

Abstract: When a telephone a belonging to an office a calls up a telephone b belonging to an office b, a subscriber of the telephone a operates a WS a connected to a computer network and edits camp-on request information when the telephone b is busy. The camp-on request information is transferred from the WS a to a CTI server b belonging to the office b connected to the computer network. The CTI server unit b performs camp-on control between the telephone b belonging to the office b and the telephone a belonging to the office a by controlling a private branch exchange b based on a schedule corresponding to the received camp-on request information.

Abstract: When a telephone a belonging to an office a calls up a telephone b belonging to an office b, a subscriber of the telephone a operates a WS a connected to a computer network and edits camp-on request information when the telephone b is busy. The camp-on request information is transferred from the WS a to a CTI server b belonging to the office b connected to the computer network. The CTI server unit b performs camp-on control between the telephone b belonging to the office b and the telephone a belonging to the office a by controlling a private branch exchange b based on a schedule corresponding to the received camp-on request information.

Abstract: When a telephone a belonging to an office a calls up a telephone b belonging to an office b, a subscriber of the telephone a operates a WS a connected to a computer network and edits camp-on request information when the telephone b is busy. The camp-on request information is transferred from the WS a to a CTI server b belonging to the office b connected to the computer network. The CTI server unit b performs camp-on control between the telephone b belonging to the office b and the telephone a belonging to the office a by controlling a private branch exchange b based on a schedule corresponding to the received camp-on request information.

Abstract: In a method of forming an insulating film, a silicon dioxide film is formed on a silicon substrate by performing heat treatment in an oxidizing gas atmosphere which does not contain nitrogen, and then the silicon dioxide film is oxynitrided by performing heat treatment in an nitrous oxide atmosphere. Prior to the formation of the silicon dioxide film, the silicon substrate is cleaned by heating it in a reducing gas atmosphere, and then heating it in a reactive gas atmosphere.

Abstract: In a method of forming an insulating film on a substrate wherein a substrate is cleaned by heating it in an atmosphere of a reducing gas, and heating it in an oxidizing gas, and then growing an insulating film by heating the substrate in an atmosphere of a gas used to grow the film in the same reaction chamber, the insulating film is grown in stages and an insulating film grown in each stage is crystallized by heat treatment with a temperature higher than the heat treatment for the film growth. This can be accomplished by interposing a heat treatment with the higher temperature between successive film growth stages, or by using a higher temperature for the film growth for each stage with a temperature higher than that for the film growth in the preceding stage.

Abstract: In an apparatus for and a method of ion implantation for implanting boron (B) and/or arsenic (As) ions in a substrate surface, a four-element alloy of platinum, silicon, arsenic, and boron or a three-element alloy of copper (Cu), arsenic, and boron is held in a reservoir in a molten state. The alloy is then supplied from the reservoir to an emitter, and a strong electric field is applied to the tip of the emitter to extract ions from the tip of the emitter. The reservoir and emitter may be a refractory metal selected from W, Mo, and Ta, at least the surface of which has been nitrided.

Abstract: In an apparatus for and a method of ion implantation for implanting boron (B) and/or arsenic (As) ions in a substrate surface, a four-element alloy of platinum, silicon, arsenic, and boron or a three-element alloy of copper (Cu), arsenic, and boron is held in a reservoir in a molten state; the alloy is then supplied from the reservoir to an emitter, and a strong electric field is applied to the tip of the emitter to extract ions from the tip of the emitter. The reservoir and emitter may be a refractory metal selected from W, Mo, and Ta, at least the surface of which has been nitrided.

Abstract: For cleaning substrates in a cleaning device, a reaction furnace of the cleaning device in which a substrate has been installed is evacuated and then supplied with a reducing gas, and a natural oxide film on the substrate is removed by heating it in an atmosphere of reducing gas, the reaction furnace is then is evacuated and a reactive gas is introduced into the reaction furnace, and contaminants on the substrate are removed by etching the substrate in the reactive gas that has been chemically activated by UV radiation.

Abstract: A method of making an electrophotographic member with an a-Si photoconductive layer and an a-c layer as a surface protecting layer is disclosed, wherein the a-c layer is deposited on the photoconductive layer; which a-c layer contains hydrogen or hydrogen and fluorine, and which layer is formed by a glow discharge method.