Patents by Inventor Hisashi Genjima
Hisashi Genjima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240027923Abstract: A substrate processing apparatus for processing a substrate including a metal-containing resist film, includes: a heat treatment part configured to perform a heat treatment on the substrate having the film subjected to an exposing process; a developing process part configured to perform a developing process on the film of the substrate subjected to the heat treatment; and a gas contact part configured to bring the film into contact with an inert gas during a period after the exposing process and before the developing process.Type: ApplicationFiled: July 17, 2023Publication date: January 25, 2024Inventors: Tomoya ONITSUKA, Shinichiro KAWAKAMI, Hisashi GENJIMA
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Patent number: 11823897Abstract: There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.Type: GrantFiled: March 17, 2022Date of Patent: November 21, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Makoto Muramatsu, Hisashi Genjima
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Patent number: 11631581Abstract: A technique for obtaining good film quality in forming a silicon-oxide-containing insulating film as a coating film on a substrate. A coating liquid containing polysilazane is applied to a wafer, a solvent in the coating liquid is volatilized, and then the coating film is irradiated with ultraviolet rays under a nitrogen atmosphere before performing a curing process. Thus, dangling bonds are likely to be formed at hydrolyzed portions in polysilazane. Since dangling bonds are formed in advance at portions in silicon to be hydrolyzed, productivity of hydroxyl groups is enhanced. That is, since an energy required for hydrolysis is reduced, the number of the portions remaining without being hydrolyzed is reduced even when the curing process is performed at a low temperature. Therefore, dehydration synthesis occurs efficiently, which increases a crosslinking rate and makes it possible to form a dense (good film quality) insulating film.Type: GrantFiled: March 13, 2018Date of Patent: April 18, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Makoto Muramatsu, Yusuke Saito, Hisashi Genjima, Hiroyuki Fujii
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Patent number: 11574812Abstract: A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.Type: GrantFiled: July 19, 2019Date of Patent: February 7, 2023Assignee: Tokyo Electron LimitedInventors: Makoto Muramatsu, Tadatoshi Tomita, Hisashi Genjima, Gen You, Takahiro Kitano
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Publication number: 20220208547Abstract: There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.Type: ApplicationFiled: March 17, 2022Publication date: June 30, 2022Inventors: Makoto Muramatsu, Hisashi Genjima
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Patent number: 11315784Abstract: There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.Type: GrantFiled: August 28, 2018Date of Patent: April 26, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Makoto Muramatsu, Hisashi Genjima
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Publication number: 20210159074Abstract: There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.Type: ApplicationFiled: August 28, 2018Publication date: May 27, 2021Inventors: Makoto MURAMATSU, Hisashi GENJIMA
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Publication number: 20200211838Abstract: A technique for obtaining good film quality in forming a silicon-oxide-containing insulating film as a coating film on a substrate. A coating liquid containing polysilazane is applied to a wafer, a solvent in the coating liquid is volatilized, and then the coating film is irradiated with ultraviolet rays under a nitrogen atmosphere before performing a curing process. Thus, dangling bonds are likely to be formed at hydrolyzed portions in polysilazane. Since dangling bonds are formed in advance at portions in silicon to be hydrolyzed, productivity of hydroxyl groups is enhanced. That is, since an energy required for hydrolysis is reduced, the number of the portions remaining without being hydrolyzed is reduced even when the curing process is performed at a low temperature. Therefore, dehydration synthesis occurs efficiently, which increases a crosslinking rate and makes it possible to form a dense (good film quality) insulating film.Type: ApplicationFiled: March 13, 2018Publication date: July 2, 2020Inventors: Makoto MURAMATSU, Yusuke SAITO, Hisashi GENJIMA, Hiroyuki FUJII
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Patent number: 10586711Abstract: A substrate processing method of processing a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the substrate processing method includes: a block copolymer coating step of applying the block copolymer onto the substrate on which a predetermined projecting and recessed pattern is formed, to form a coating film of the block copolymer; a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer; a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer; and after the block copolymer coating step and before the polymer removal step, a film thickness reduction step of reducing a film thickness of the coating film of the block copolymer.Type: GrantFiled: October 20, 2016Date of Patent: March 10, 2020Assignee: Tokyo Electron LimitedInventors: Makoto Muramatsu, Tadatoshi Tomita, Hisashi Genjima, Takahiro Kitano
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Publication number: 20190341255Abstract: A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.Type: ApplicationFiled: July 19, 2019Publication date: November 7, 2019Inventors: Makoto MURAMATSU, Tadatoshi TOMITA, Hisashi GENJIMA, Gen YOU, Takahiro KITANO
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Patent number: 10418242Abstract: A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.Type: GrantFiled: September 15, 2015Date of Patent: September 17, 2019Assignee: Tokyo Electron LimitedInventors: Makoto Muramatsu, Tadatoshi Tomita, Hisashi Genjima, Gen You, Takahiro Kitano
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Patent number: 10329144Abstract: A substrate treatment method using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer includes a polymer separating step, wherein a ratio of a molecular weight of the hydrophilic polymer in the block copolymer is adjusted to 20% to 40% so that the hydrophilic polymers align at positions corresponding to a hexagonal close-packed structure in a plan view after the polymer separating step, and at the polymer separating step, a columnar first hydrophilic polymer is phase-separated on each of circular patterns of hydrophobic coating films and a columnar second hydrophilic polymer is phase-separated between the first hydrophilic polymers, and a diameter of the circular pattern is set so that the first hydrophilic polymers and the second hydrophilic polymers align at positions corresponding to the hexagonal close-packed structure in a plan view.Type: GrantFiled: February 10, 2016Date of Patent: June 25, 2019Assignee: Tokyo Electron LimitedInventors: Makoto Muramatsu, Tadatoshi Tomita, Hisashi Genjima, Gen You, Takahiro Kitano, Takanori Nishi
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Publication number: 20180269072Abstract: A substrate processing method of processing a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the substrate processing method includes: a block copolymer coating step of applying the block copolymer onto the substrate on which a predetermined projecting and recessed pattern is formed, to form a coating film of the block copolymer; a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer; a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer; and after the block copolymer coating step and before the polymer removal step, a film thickness reduction step of reducing a film thickness of the coating film of the block copolymer.Type: ApplicationFiled: October 20, 2016Publication date: September 20, 2018Inventors: Makoto MURAMATSU, Tadatoshi TOMITA, Hisashi GENJIMA, Takahiro KITANO
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Publication number: 20180065843Abstract: A substrate treatment method using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer includes a polymer separating step, wherein a ratio of a molecular weight of the hydrophilic polymer in the block copolymer is adjusted to 20% to 40% so that the hydrophilic polymers align at positions corresponding to a hexagonal close-packed structure in a plan view after the polymer separating step, and at the polymer separating step, a columnar first hydrophilic polymer is phase-separated on each of circular patterns of hydrophobic coating films and a columnar second hydrophilic polymer is phase-separated between the first hydrophilic polymers, and a diameter of the circular pattern is set so that the first hydrophilic polymers and the second hydrophilic polymers align at positions corresponding to the hexagonal close-packed structure in a plan view.Type: ApplicationFiled: February 10, 2016Publication date: March 8, 2018Inventors: Makoto MURAMATSU, Tadatoshi TOMITA, Hisashi GENJIMA, Gen YOU, Takahiro KITANO, Takanori NISHI
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Publication number: 20170287749Abstract: A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.Type: ApplicationFiled: September 15, 2015Publication date: October 5, 2017Inventors: Makoto MURAMATSU, Tadatoshi TOMITA, Hisashi GENJIMA, Gen YOU, Takahiro KITANO
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Patent number: 9418860Abstract: A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) is formed surrounding the exposed topography. Further to the method, the exposed template surfaces are chemically treated. In one embodiment, the surfaces are treated with a hydrogen-containing reducing chemistry to alter the surfaces to a less oxidized state. In another embodiment, the surfaces are coated with a first phase of a block copolymer (BCP) to render the surfaces more attractive to the first phase than prior to the coating. The template is then filled with the BCP to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.Type: GrantFiled: October 20, 2014Date of Patent: August 16, 2016Assignee: Tokyo Electron LimitedInventors: Mark H. Somervell, Makoto Muramatsu, Benjamen M. Rathsack, Tadatoshi Tomita, Hisashi Genjima, Hidetami Yaegashi, Kenichi Oyama
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Publication number: 20150111387Abstract: A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) is formed surrounding the exposed topography. Further to the method, the exposed template surfaces are chemically treated. In one embodiment, the surfaces are treated with a hydrogen-containing reducing chemistry to alter the surfaces to a less oxidized state. In another embodiment, the surfaces are coated with a first phase of a block copolymer (BCP) to render the surfaces more attractive to the first phase than prior to the coating. The template is then filled with the BCP to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.Type: ApplicationFiled: October 20, 2014Publication date: April 23, 2015Inventors: Mark H. Somervell, Makoto Muramatsu, Benjamen M. Rathsack, Tadatoshi Tomita, Hisashi Genjima, Hidetami Yaegashi, Kenichi Oyama