Abstract: Disclosed is the method for producing an anionic surfactant powder, including removing impurities by introducing gas into a crude anionic surfactant containing water in a content of 0.01 to 5% by weight in a granulator or drier, having an agitating blade. Also disclosed is the method for producing an anionic surfactant powder, including introducing a gas along with the surface of an inner wall of a granulator or drier having an agitating blade at a reduced pressure to produce the anionic surfactant powder.

Abstract: Disclosed is a method for producing an anionic surfactant powder, which comprises a step wherein an aqueous anionic surfactant solution having an anionic surfactant concentration of 0.01-40% by weight is introduced into a granulating machine or a drying machine having a mixing blade under a reduced pressure for granulation and drying.

Abstract: The present invention relates to a method for producing an anionic surfactant granule, which includes granulating an anionic surfactant powder in a granulator having an agitating blade, while adding water, at a temperature of the granule being higher by 0.5 to 30° C. than a boiling point of water under a pressure of the inside of the granulator.

Abstract: Disclosed is the method for producing an anionic surfactant powder, including removing impurities by introducing gas into a crude anionic surfactant containing water in a content of 0.01 to 5% by weight in a granulator or drier, having an agitating blade. Also disclosed is the method for producing an anionic surfactant powder, including introducing a gas along with the surface of an inner wall of a granulator or drier having an agitating blade at a reduced pressure to produce the anionic surfactant powder.

Abstract: The present invention relates to a method for producing an anionic surfactant granule, which includes granulating an anionic surfactant powder in a granulator having an agitating blade, while adding water, at a temperature of the granule being higher by 0.5 to 30° C. than a boiling point of water under a pressure of the inside of the granulator.

Abstract: Disclosed is a method for producing an anionic surfactant powder, which comprises a step wherein an aqueous anionic surfactant solution having an anionic surfactant concentration of 0.01-40% by weight is introduced into a granulating machine or a drying machine having a mixing blade under a reduced pressure for granulation and drying.

Abstract: The invention provides a granular anionic surfactant and a detergent composition blended with the same. Disclosed are a process for producing a granular anionic surfactant, which including stirring particles containing 50 to 100 wt % of an anionic surfactant at a temperature at which the anionic surfactant exhibits thermoplasticity at a stirring Froude number as defined below by equation (i) of 0.1 or more and less than 2.0; a granular anionic surfactant obtained by the process; a granular anionic surfactant having a surface roughness (Ra) of 1.0 ?m or less; and a detergent composition comprising the granular anionic surfactant. Fr=V/[(R×g)0.5]??(i) wherein Fr is Froude number, V is the peripheral speed at the top of a stirring blade [m/s], R is the radius of gyration of a stirring blade [m], and g is the acceleration of gravity [m/s2].

Abstract: The invention provides a granular anionic surfactant and a detergent composition blended with the same. Disclosed are a process for producing a granular anionic surfactant, which including stirring particles containing 50 to 100 wt % of an anionic surfactant at a temperature at which the anionic surfactant exhibits thermoplasticity at a stirring Froude number as defined below by equation (i) of 0.1 or more and less than 2.0; a granular anionic surfactant obtained by the process; a granular anionic surfactant having a surface roughness (Ra) of 1.0 ?m or less; and a detergent composition comprising the granular anionic surfactant. Fr=V/[(R×g)0.5]??(i) wherein Fr is Froude number, V is the peripheral speed at the top of a stirring blade [m/s], R is the radius of gyration of a stirring blade [m], and g is the acceleration of gravity [m/s2].

Abstract: A method of etching a polysilicon film specimen by an electronic cyclotron resonance etching technique or a microwave plasma etching technique includes the first process in which a mixed gas containing Cl.sub.2 and HBr is used as a process gas for etching, the Cl.sub.2 occupying 50-70 vol. % of the whole mixed gas; and the second process in which a mixed gas containing HBr and He is used, with HBr being in a proportion of 20-50 vol. % of the mixed gas, and a low bias voltage from -100 to -30 volts is applied to a specimen carrier. Further, in the first and second processes, a mixed gas containing HBr and He is used, with HBr being in a proportion of 20-50 vol. %, and a relatively high bias voltage from -250 to -100 volts is applied to the specimen carrier in the first process, while a low bias voltage from -100 to -30 volts is applied to the same in the second process. According to the present invention, a polysilicon film can be etched without causing undercut and with high dimensional accuracy.