Patents by Inventor Hisashi Kawano
Hisashi Kawano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180082831Abstract: In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the concavo-convex pattern is filled and which is formed by evaporating a solvent in a sublimable substance solution containing a sublimable substance that sublimates at a temperature equal to or higher than a first temperature, and an impurity that evaporates at a temperature equal to or higher than a second temperature that is higher than the first temperature, the prevent invention provides a substrate processing apparatus and a substrate processing method which heat the substrate to a temperature equal to or higher than the second temperature.Type: ApplicationFiled: November 29, 2017Publication date: March 22, 2018Applicant: Tokyo Electron LimitedInventors: Koji KAGAWA, Hisashi KAWANO, Meitoku AIBARA, Yuki YOSHIDA
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Patent number: 9922849Abstract: Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.Type: GrantFiled: April 17, 2015Date of Patent: March 20, 2018Assignee: Tokyo Electron LimitedInventors: Yasuyuki Ido, Naoki Shindo, Takehiko Orii, Keisuke Egashira, Yosuke Hachiya, Kotaro Ooishi, Hisashi Kawano, Shinichiro Shimomura
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Patent number: 9870914Abstract: In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the concavo-convex pattern is filled and which is formed by evaporating a solvent in a sublimable substance solution containing a sublimable substance that sublimates at a temperature equal to or higher than a first temperature, and an impurity that evaporates at a temperature equal to or higher than a second temperature that is higher than the first temperature, the prevent invention provides a substrate processing apparatus and a substrate processing method which heat the substrate to a temperature equal to or higher than the second temperature.Type: GrantFiled: August 2, 2016Date of Patent: January 16, 2018Assignee: Tokyo Electron LimitedInventors: Koji Kagawa, Hisashi Kawano, Meitoku Aibara, Yuki Yoshida
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Publication number: 20180012781Abstract: A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.Type: ApplicationFiled: September 25, 2017Publication date: January 11, 2018Inventors: Yosuke Kawabuchi, Hisashi Kawano, Satoru Tanaka, Hiroyuki Suzuki, Kotaro Oishi, Kazuyoshi Shinohara, Yuki Yoshida
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Patent number: 9818598Abstract: An object of the present invention is to be able to obtain a high removing performance of particles. The substrate processing method according to the exemplary embodiment comprises a film-forming treatment solution supply step and a removing solution supply step. The film-forming treatment solution supply step comprising supplying to a substrate, a film-forming treatment solution containing an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent is supplied. The removing solution supply step comprises supplying to a treatment film formed by solidification or curing of the film-forming treatment solution on the substrate, a removing solution capable of removing the treatment film.Type: GrantFiled: July 27, 2015Date of Patent: November 14, 2017Assignees: Tokyo Electron Limited, JSR CorporationInventors: Meitoku Aibara, Yuki Yoshida, Hisashi Kawano, Masami Yamashita, Itaru Kanno, Kenji Mochida, Motoyuki Shima
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Patent number: 9805957Abstract: A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.Type: GrantFiled: June 5, 2014Date of Patent: October 31, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Yosuke Kawabuchi, Hisashi Kawano, Satoru Tanaka, Hiroyuki Suzuki, Kotaro Oishi, Kazuyoshi Shinohara, Yuki Yoshida
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Publication number: 20170186620Abstract: A substrate processing method according to the present disclosure includes: a liquid processing process of supplying a processing liquid to a substrate having a surface on which a pattern having a plurality of convex portions is formed; a drying process of removing the processing liquid existing on the surface of the substrate dry the substrate, and a separating process of separating a sticking portion between adjacent ones of the convex portions after the drying process.Type: ApplicationFiled: December 7, 2016Publication date: June 29, 2017Inventors: Hiroshi Marumoto, Hisashi Kawano, Hiromi Kiyose, Mitsunori Nakamori, Kazuyuki Mitsuoka
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Publication number: 20170040154Abstract: In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the concavo-convex pattern is filled and which is formed by evaporating a solvent in a sublimable substance solution containing a sublimable substance that sublimates at a temperature equal to or higher than a first temperature, and an impurity that evaporates at a temperature equal to or higher than a second temperature that is higher than the first temperature, the prevent invention provides a substrate processing apparatus and a substrate processing method which heat the substrate to a temperature equal to or higher than the second temperature.Type: ApplicationFiled: August 2, 2016Publication date: February 9, 2017Applicant: Tokyo Electron LimitedInventors: Koji KAGAWA, Hisashi KAWANO, Meitoku AIBARA, Yuki YOSHIDA
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Publication number: 20170011907Abstract: Disclosed is a substrate processing method including: supplying a first solvent including a fluorine-free organic solvent, to a workpiece; supplying a second solvent including a fluorine-containing organic solvent that is not dissolved with the first solvent at a normal temperature, and is dissolved with the first solvent at a temperature higher than the normal temperature; and replacing the first solvent with the second solvent while dissolving the first solvent and the second solvent by heating the first solvent and the second solvent to a dissolution temperature or higher.Type: ApplicationFiled: July 5, 2016Publication date: January 12, 2017Inventors: Kazuyuki Mitsuoka, Hiroki Ohno, Gentaro Goshi, Hisashi Kawano
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Patent number: 9378940Abstract: The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.Type: GrantFiled: June 13, 2013Date of Patent: June 28, 2016Assignee: Tokyo Electron LimitedInventors: Hisashi Kawano, Norihiro Ito, Yosuke Hachiya, Jun Nogami, Kotaro Ooishi, Itaru Kanno
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Publication number: 20160035561Abstract: An object of the present invention is to obtain a high removing performance of particles. The substrate processing system according to the exemplary embodiment comprises a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, wherein the treatment film comprises an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent. The removing solution supply unit supplies to the treatment film formed on the substrate, a removing solution capable of removing the treatment film.Type: ApplicationFiled: July 27, 2015Publication date: February 4, 2016Inventors: Meitoku AIBARA, Yuki YOSHIDA, Hisashi KAWANO, Masami YAMASHITA, Itaru KANNO, Kenji MOCHIDA, Motoyuki SHIMA
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Publication number: 20160035564Abstract: An object of the present invention is to be able to obtain a high removing performance of particles. The substrate processing method according to the exemplary embodiment comprises a film-forming treatment solution supply step and a removing solution supply step. The film-forming treatment solution supply step comprising supplying to a substrate, a film-forming treatment solution containing an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent is supplied. The removing solution supply step comprises supplying to a treatment film formed by solidification or curing of the film-forming treatment solution on the substrate, a removing solution capable of removing the treatment film.Type: ApplicationFiled: July 27, 2015Publication date: February 4, 2016Inventors: Meitoku AIBARA, Yuki YOSHIDA, Hisashi KAWANO, Masami YAMASHITA, Itaru KANNO, Kenji MOCHIDA, Motoyuki SHIMA
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Publication number: 20150318183Abstract: Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.Type: ApplicationFiled: April 17, 2015Publication date: November 5, 2015Inventors: Yasuyuki Ido, Naoki Shindo, Takehiko Orii, Keisuke Egashira, Yosuke Hachiya, Kotaro Ooishi, Hisashi Kawano, Shinichiro Shimomura
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Publication number: 20150031214Abstract: A chemical fluid processing apparatus and a chemical fluid processing method are described, to treat a substrate with a plurality of chemical fluids such that substantially constant temperature is maintained across a substrate surface. The apparatus includes a discharge nozzle above the substrate to supply a first chemical fluid at a first temperature to a front surface of the substrate, a bar nozzle oriented in a radial direction of the substrate to supply a second chemical fluid at a second temperature to the front surface or a back surface of the substrate, the second temperature being higher than the first temperature, and where the bar nozzle includes a plurality of outlets for discharging the second chemical fluid to a plurality of contacting places on the front surface or the back surface of the substrate at different distances from the center of the substrate.Type: ApplicationFiled: July 23, 2014Publication date: January 29, 2015Inventors: Derek W Bassett, Wallace P Printz, Gentaro Goshi, Hisashi Kawano, Yoshihiro Kai
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Publication number: 20140377463Abstract: Disclosed is a liquid processing method which may de-electrify the surface of a hydrophobized substrate. A substrate electrified according to a liquid processing is de-electrified by supplying a hydrophobizing liquid to a surface of the substrate subjected to the liquid processing while rotating the substrate, and performing rinsing by supplying an alkaline rinsing liquid to the hydrophobized surface of the substrate.Type: ApplicationFiled: June 6, 2014Publication date: December 25, 2014Inventors: Yosuke Hachiya, Hisashi Kawano, Mitsunori Nakamori, Jun Nonaka, Shogo Mizota, Tatsuya Nagamatsu, Daisuke Saiki, Kazuhiro Teraoka, Takashi Yabuta
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Publication number: 20140360536Abstract: A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.Type: ApplicationFiled: June 5, 2014Publication date: December 11, 2014Inventors: Yosuke Kawabuchi, Hisashi Kawano, Satoru Tanaka, Hiroyuki Suzuki, Kotaro Oishi, Kazuyoshi Shinohara, Yuki Yoshida
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Publication number: 20130340796Abstract: The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.Type: ApplicationFiled: June 13, 2013Publication date: December 26, 2013Inventors: Hisashi Kawano, Norihiro Ito, Yosuke Hachiya, Jun Nogami, Kotaro Ooishi, Itaru Kanno
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Publication number: 20130284213Abstract: The present disclosure provides a substrate processing method and a substrate processing apparatus. The substrate processing method includes: generating an SPM liquid of a first temperature that contains Caro's acid having a separation effect of a resist film formed on the surface of a substrate by mixing heated sulfuric acid with hydrogen peroxide; cooling the SPM liquid to a second temperature at which a reduction effect of film loss occurs; and applying the SPM liquid of the second temperature to the resist film thereby separating the resist film.Type: ApplicationFiled: April 8, 2013Publication date: October 31, 2013Applicant: Tokyo Electron LimitedInventors: Yosuke Hachiya, Norihiro Ito, Hisashi Kawano, Jun Nonaka, Jun Nogami
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Publication number: 20120328273Abstract: Disclosed is a thermal processing apparatus and method that can acquire a high throughput and reduce the occupation area of the thermal processing apparatus. A wafer is heated by an LED module that irradiates infrared light corresponding to the absorption wavelength of the wafer, and therefore, the wafer can be rapidly heated. Since an LED is used as a heat source and a temperature rise of LED is small, a cooling process after the heating process can be performed in the same process area as the heating process area. As a result, an installation area of the thermal processing apparatus can be reduced. Since the time for moving between a heating process area and a cooling process area can be saved, a time required for a series of processes including the heating process and the subsequent cooling process can be shortened, thereby improving a throughput.Type: ApplicationFiled: June 15, 2012Publication date: December 27, 2012Inventors: Hisashi KAWANO, Ryouichi Uemura, Kousuke Yoshihara, Shigeru Kasai, Keiji Tanouchi, Makoto Muramatsu, Mitsuaki Iwashita, Masatake Yoneda, Kazuhiro Ooya
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Patent number: 7924396Abstract: A coating/developing apparatus includes a process section including processing units to perform a series of processes for resist coating and development; an interface section disposed between the process section and immersion light exposure apparatus; and a drying section disposed in the interface section to dry the substrate immediately after the immersion light exposure process. The drying section includes a process container configured to accommodate the substrate, a substrate support member configured to place the substrate thereon, a temperature-adjusted gas supply mechanism configured to supply a temperature-adjusted gas into the process container, and an exhaust mechanism configured to exhaust the process container. The drying section is arranged to dry the substrate by supplying the temperature-adjusted gas into the process container with the substrate placed on the substrate support member, while exhausting the process container.Type: GrantFiled: December 18, 2007Date of Patent: April 12, 2011Assignee: Tokyo Electron LimitedInventors: Hisashi Kawano, Junichi Kitano, Hitoshi Kosugi, Koichi Hontake, Masashi Enomoto