Abstract: Provided is a semiconductor device with a reference voltage circuit including an enhancement type transistor having P-type polycrystalline silicon as a first gate electrode, and a depletion type transistor having N-type polycrystalline silicon as a second gate electrode, in which the enhancement type transistor has an impermeable film that is locally provided to cover the first gate electrode via an interlayer insulating film disposed on the first gate electrode, and a nitride film that has an opening portion which is provided larger than the first gate electrode and smaller than the impermeable film, and is provided to cover a periphery of the impermeable film, and the depletion type transistor has a nitride film that is directly provided on an interlayer insulating film disposed on the second gate electrode and covers the depletion type transistor without a gap.

Abstract: In an example information processing system including a server and at least one apparatus capable of communicating with the server, the apparatus includes at least an application execution unit. The application execution unit executes a predetermined application. The system includes, by either one of the apparatus and the server or by a cooperation of the apparatus and the server, an execution state determination unit and a writing management unit. The execution state determination unit determines whether or not a state of the execution performed by the application execution unit has satisfied a predetermined condition. The writing management unit, when the state has satisfied the predetermined condition, permits a user of the apparatus to write in information managed by the server.

Abstract: A wounded core Scott transformer configured so that opposed core legs of wounded cores corresponding to core legs mounted in a main coil and a teaser coil are arranged on the inside between the respective coils so as to be supported.

Abstract: An apparatus for manufacturing a transformer core includes a drawing which draws magnetic sheet materials in parallel from winding bodies. A cutter cuts the sheet materials at predetermined positions substantially simultaneously to form sheets each with a different length. An overlapping unit forms a block-shaped laminate by laminating the cut magnetic sheet materials in length and forms a resultant laminate by laminating the formed block-shaped laminates. An annulation unit forms an annular structure of the resultant laminate so that the longer block-shaped laminate forms the outer annular portion and the shorter block-shaped laminate forms the inner annular portion. Both ends of the magnetic sheet materials are abutted or overlapped to locate the abutted or overlapped portions at annularly different positions between adjoining layers of the magnetic sheet materials. A control unit controls the drawing unit, cutter and overlapping unit.

Abstract: A program reception task and an advertisement reception task are set. The program reception task defines an execution content which includes an execution schedule of a reception process for program data including video data and audio data of programs, and the advertisement reception task defines an execution content including an execution schedule of a reception process for advertisement data including at least one of video data, still image data, and audio data of advertisements. Then, the program reception task and the advertisement reception task are executed based on the execution schedules set in the program reception task and the advertisement reception task, respectively, to perform reception of the program data and reception of the advertisement data from a server independently from each other.

Abstract: A technology for manufacturing a transformer core with laminated structure draws the magnetic sheet materials in parallel from plural winding bodies around which the magnetic sheet material is wound like hoop, cuts the materials at predetermined positions substantially simultaneously to form plural magnetic sheet materials each with a different length, forms a block-shaped laminate by laminating the plural magnetic sheet materials in the order of length, and further laminates the block-shaped laminates in the order of length.

Abstract: Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.

Abstract: Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.

Abstract: Disclosed is a diamond film field effect transistor incorporating a p-type semiconducting diamond layer of a specific thickness and B-doping concentration, which has a sufficiently large modulation of the gate voltage dependent current flowing between the source electrode and the drain electrode and whose transistor characteristics are not deteriorated even if adsorption of moisture occurs. Specifically, the diamond film field effect transistor includes; an active layer formed of a p-type semiconducting diamond wherein the concentration of a p-type impurity in the range between 10.sup.17 /cm.sup.3 and 10.sup.20 /cm.sup.3 and the film thickness is 0.14 .mu.m or less; and a gate electrode formed on the p-type semiconducting diamond active layer through an insulating layer.

Abstract: Disclosed is a method for forming a diamond film on a substrate by vapor-phase synthesis using a reaction gas which contains B.sub.2 H.sub.6 and O.sub.2 with a gas concentration ratio (volume %) of ([B.sub.2 H.sub.6 ]/[O.sub.2 ]).gtoreq.1.times.10.sup.-4 in addition to a hydrocarbon gas in hydrogen. By this invention, it is possible to form p-type semiconducting diamond films having an excellent crystallinity and desired electric characteristics.

Abstract: A garment hanger has a base with a hook and a trousers mount. A connector connects the base and the trousers mount in such a way that one end of the mount is open and a space for hanging and removing trousers is formed between the base and the mount. The ends of the mount are provided with elements which engage and hold the trousers only when the hanger is tilted so as to prevent the trousers from sliding off the mount.