Abstract: A hardcoat film comprises a substrate film, and a hardcoat layer laminated on at least one side of the substrate film, wherein a reflectance of the hardcoat layer at a wavelength within 400 to 600 nm has a mean ripple amplitude of 1% or less. The hardcoat film has decreased iris patterns. There is also provided an antireflection film having a low surface reflectance and a neutral tone of color, and an equipment for display including the film.

Abstract: The invention provides a coating material containing silica fine particles, a siloxane compound, and a curing agent and giving an even coating film in the case it is used for forming a coating film. The invention gives a siloxane-based coating material excellent in storage stability and giving high surface hardness of a coating film when the coating material is used for forming the coating film. The invention also provides an optical article excellent in anti-reflection property and scratching resistance.

Abstract: A polishing pad characterized by having a mechanism for supplying water to the plane of the polishing pad in contact with the article to be polished, in particular, in case the mechanism comprises a domain structure having an area of 1×10?6 m2 or smaller, reduces the generation of scratches and the dust adhesion on the surface of the article to be polished, while increasing polishing rate at low dishing and erosion; hence, the product is applicable to the field of surface polishing of semiconductor thin films.

Abstract: A hardcoat film comprises a substrate film, and a hardcoat layer laminated on at least one side of the substrate film, wherein a reflectance of the hardcoat layer at a wavelength within 400 to 600 nm has a mean ripple amplitude of 1% or less. The hardcoat film has decreased iris patterns. There is also provided an antireflection film having a low surface reflectance and a neutral tone of color, and an equipment for display including the film.

Abstract: A polishing pad characterized by having a mechanism for supplying water to the plane of the polishing pad in contact with the article to be polished, in particular, in case the mechanism comprises a domain structure having an area of 1×10−6 m2 or smaller, reduces the generation of scratches and the dust adhesion on the surface of the article to be polished, while increasing polishing rate at low dishing and erosion; hence, the product is applicable to the field of surface polishing of semiconductor thin films.

Abstract: The present invention relates to a polishing pad which is characterized in that it has a polishing layer of rubber A-type microhardness at least 80° and a cushioning layer of bulk modulus at least 40 MPa and tensile modulus in the range 0.1 MPa to 20 MPa, and to a polishing device which is characterized in that a semiconductor substrate is fixed to the polishing head, and an aforesaid polishing pad is fixed to the polishing platen so that the polishing layer faces the semiconductor substrate, and by rotating the aforesaid polishing head or the polishing platen, or both, the semiconductor substrate is polished.