Abstract: A radiation-sensitive composition contains: a polymetalloxane including a structural unit represented by formula (1); a radiation-sensitive acid generator; and a solvent. In the following formula (1), M represents a germanium atom, a tin atom or a lead atom; Ar1 represents a substituted or unsubstituted aryl group having 6 to 20 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 20 ring atoms; R1 represents a monovalent organic group having 1 to 20 carbon atoms, a hydrogen atom, a halogen atom or a hydroxy group; and n is 2 or 3.

Abstract: A radiation-sensitive composition includes: a first polymer having a first structural unit that includes an acid-labile group; and a first compound including a metal cation and a first anion that is a conjugate base of an acid. The acid has a pKa of no greater than 0. The acid is preferably sulfonic acid, nitric acid, organic azinic acid, disulfonylimidic acid or a combination thereof. The first compound is preferably represented by formula (1). In the formula (1), M represents a metal cation; A represents the first anion; x is an integer of 1 to 6; R1 represents a ? ligand; and y is an integer of 0 to 5, and a sum: x+y is no greater than 6. The van der Waals volume of the acid is preferably no less than 2.5×10?28 m3.

Abstract: A radiation-sensitive composition is to be used in exposure with an extreme ultraviolet ray or an electron beam, and includes a first polymer and a solvent, wherein the first polymer includes a first structural unit including: at least one metal atom; and at least one carbon atom that each bonds to the metal atom by a chemical bond and does not constitute an unsaturated bond, and at least one chemical bond is a covalent bond. Every chemical bond is preferably a covalent bond. The metal atom is preferably tin, germanium, lead or a combination thereof.

Abstract: A radiation-sensitive composition contains: a metal oxide having a first structural unit represented by formula (1), formula (2) or a combination thereof, and a second structural unit represented by formula (3); and a solvent. In the formulae (1) to (3), M1, M2 and M3 each independently represent germanium, tin or lead; and R1, R2 and R3 each independently represent a monovalent organic group having 1 to 40 carbon atoms which bonds to M1 or M2 via a carbon atom. A proportion of the first structural unit with respect to total structural units constituting the metal oxide is preferably no less than 50 mol %.

Abstract: A pattern-forming method includes applying a radiation-sensitive composition comprising a complex on a substrate to provide a film on the substrate. The film is exposed. The film exposed is developed. The complex includes: a metal-containing component that is a transition metal compound having a hydrolyzable group, a hydrolysis product of the transition metal compound having a hydrolyzable group, a hydrolytic condensation product of the transition metal compound having a hydrolyzable group, or a combination thereof; and an organic compound represented by formula (1). In the formula (1), R1 represents an organic group having a valency of n, n being an integer of 1 to 4. In a case where n is 1, X represents —COOH. In a case where n is 2 to 4, X represents —OH, —COOH, —NCO, —NHRa, —COORA or —CO—C(RL)2—CO—RA.

Abstract: A radiation-sensitive composition contains: a polymetalloxane including a structural unit represented by formula (1); a radiation-sensitive acid generator; and a solvent. In the following formula (1), M represents a germanium atom, a tin atom or a lead atom; Ar1 represents a substituted or unsubstituted aryl group having 6 to 20 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 20 ring atoms; R1 represents a monovalent organic group having 1 to 20 carbon atoms, a hydrogen atom, a halogen atom or a hydroxy group; and n is 2 or 3.

Abstract: A radiation-sensitive composition includes particles and a solvent. The particles include a first component and a second component. The first component is a hydrolyzation product or a hydrolytic condensation product of a metal compound including a hydrolyzable group, or a combination thereof; and the second component is an organic acid, an anion of the organic acid, a first compound represented by formula (1), or a combination thereof. The organic acid and the first compound each have a molecular weight of no less than 120. In the formula (1), R1 represents an organic group having a valency of n; X represents an alcoholic hydroxyl group, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group; and n is an integer of 2 to 4.

Abstract: A radiation-sensitive composition includes: a first polymer having a first structural unit that includes an acid-labile group; and a first compound including a metal cation and a first anion that is a conjugate base of an acid. The acid has a pKa of no greater than 0. The acid is preferably sulfonic acid, nitric acid, organic azinic acid, disulfonylimidic acid or a combination thereof. The first compound is preferably represented by formula (1). In the formula (1), M represents a metal cation; A represents the first anion; x is an integer of 1 to 6; R1 represents a ? ligand; and y is an integer of 0 to 5, and a sum: x+y is no greater than 6. The van der Waals volume of the acid is preferably no less than 2.5×10?28 m3.

Abstract: A radiation-sensitive composition contains: a compound that includes a metal and an oxygen atom, the metal and the oxygen atom being bonded by a covalent bond; and a solvent composition. The metal is a metal of an element belonging to any one of period 4 to period 7 of group 3 to group 15 in periodic table. The solvent contains: a first solvent having a viscosity at 20° C. of no greater than 10 mPa·s and a vapor pressure at 20° C. of no greater than 5 kPa; and a second solvent having a van der Waals volume of no greater than 150 ?3, and being different from the first solvent. The second solvent is: water; a monovalent alcohol represented by R1—OH; R2—COOH; or a combination thereof.

Abstract: A pattern-forming method includes applying a radiation-sensitive composition on a substrate to provide a film on the substrate. The film is exposed. The film exposed is developed. The radiation-sensitive composition includes a metal-containing component that is a metal compound having a hydrolyzable group, a hydrolysis product of the metal compound having a hydrolyzable group, a hydrolytic condensation product of the metal compound having a hydrolyzable group, or a combination thereof. A content of a transition metal atom in the metal-containing component with respect to total metal atoms in the metal-containing component is no less than 50 atomic %.

Abstract: A radiation-sensitive composition contains: a metal oxide having a first structural unit represented by formula (1), formula (2) or a combination thereof, and a second structural unit represented by formula (3); and a solvent. In the formulae (1) to (3), M1, M2 and M3 each independently represent germanium, tin or lead; and R1, R2 and R3 each independently represent a monovalent organic group having 1 to 40 carbon atoms which bonds to M1 or M2 via a carbon atom. A proportion of the first structural unit with respect to total structural units constituting the metal oxide is preferably no less than 50 mol %.

Abstract: A radiation-sensitive composition is to be used in exposure with an extreme ultraviolet ray or an electron beam, and includes a first polymer and a solvent, wherein the first polymer includes a first structural unit including: at least one metal atom; and at least one carbon atom that each bonds to the metal atom by a chemical bond and does not constitute an unsaturated bond, and at least one chemical bond is a covalent bond. Every chemical bond is preferably a covalent bond. The metal atom is preferably tin, germanium, lead or a combination thereof.

Abstract: Provided is a radiation-sensitive composition superior in sensitivity. A radiation-sensitive composition incudes a metal oxide having a structural unit represented by formula (1), and a solvent. In the formula (1), M represents germanium, tin or lead; R1 represents a monovalent organic group having no greater than 30 carbon atoms which includes at least one of an electron attractive group and an unsaturated bond-containing group, and bonds to M via a carbon atom.

Abstract: A semiconductor device production composition comprises a product obtained by mixing a metal compound and a compound represented by Formula (1) in a first organic solvent, and a second organic solvent. R and R? each independently represent a hydrogen atom, a linear or cyclic alkyl group having a carbon number of 2 to 20, a linear or cyclic alkylcarbonyl group having a carbon number of 2 to 20, an aryl group having a carbon number of 6 to 20, or an aryloxy group having a carbon number of 6 to 20, and part of the hydrogen atoms in the cyclic alkyl, cyclic alkylcarbonyl, aryl, or aryloxy group are substituted or unsubstituted.

Abstract: A chemically amplified resist material comprises: a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid; and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The polymer component comprises: a first polymer comprising a first structural unit that comprises a fluorine atom and does not comprise a salt structure; or a second polymer comprising a second structural unit that comprises a fluorine atom and a salt structure. The generative component comprises: a radiation-sensitive acid-and-sensitizer generating agent; any two of the radiation-sensitive acid-and-sensitizer generating agent, a radiation-sensitive sensitizer generating agent and a radiation-sensitive acid generating agent; or the radiation-sensitive acid-and-sensitizer generating agent, the radiation-sensitive sensitizer generating agent and the radiation-sensitive acid generating agent.

Abstract: An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a ?-diketone, a ?-keto ester, a ?-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4.

Abstract: A radiation-sensitive composition includes: a first polymer having a first structural unit that includes an acid-labile group; and a first compound including a metal cation and a first anion that is a conjugate base of an acid. The acid has a pKa of no greater than 0. The acid is preferably sulfonic acid, nitric acid, organic azinic acid, disulfonylimidic acid or a combination thereof. The first compound is preferably represented by formula (1). In the formula (1), M represents a metal cation; A represents the first anion; x is an integer of 1 to 6; R1 represents a ? ligand; and y is an integer of 0 to 5, and a sum: x+y is no greater than 6. The van der Waals volume of the acid is preferably no less than 2.5×10?28 m3.

Abstract: A resist-pattern-forming method comprises: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern. The resist material film is made from a photosensitive resin composition comprising a chemically amplified resist material. The chemically amplified resist material comprises a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. A van der Waals volume of the acid generated from the generative component is no less than 3.0×10?28 m3.

Abstract: A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).

Abstract: A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid-and-sensitizer generating agent or the radiation-sensitive acid generating agent included in the generative component comprises the first compound that is radiation-sensitive and second compound that is radiation-sensitive. The first compound includes a first onium cation and a first anion, and the second compound includes a second onium cation and a second anion that is different from the first anion. Each of an energy released upon reduction of the first onium cation to a radical and an energy released upon reduction of the second onium cation to a radical is less than 5.0 eV.